DE69702151D1 - Überlagerungsmessung mittels Korrelationsfunktion - Google Patents

Überlagerungsmessung mittels Korrelationsfunktion

Info

Publication number
DE69702151D1
DE69702151D1 DE69702151T DE69702151T DE69702151D1 DE 69702151 D1 DE69702151 D1 DE 69702151D1 DE 69702151 T DE69702151 T DE 69702151T DE 69702151 T DE69702151 T DE 69702151T DE 69702151 D1 DE69702151 D1 DE 69702151D1
Authority
DE
Germany
Prior art keywords
correlation function
overlay measurement
overlay
measurement
correlation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69702151T
Other languages
English (en)
Other versions
DE69702151T2 (de
Inventor
Kenji Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12667895&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69702151(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69702151D1 publication Critical patent/DE69702151D1/de
Publication of DE69702151T2 publication Critical patent/DE69702151T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE69702151T 1996-02-29 1997-02-10 Überlagerungsmessung mittels Korrelationsfunktion Expired - Fee Related DE69702151T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8043586A JP2842362B2 (ja) 1996-02-29 1996-02-29 重ね合わせ測定方法

Publications (2)

Publication Number Publication Date
DE69702151D1 true DE69702151D1 (de) 2000-07-06
DE69702151T2 DE69702151T2 (de) 2001-06-21

Family

ID=12667895

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69702151T Expired - Fee Related DE69702151T2 (de) 1996-02-29 1997-02-10 Überlagerungsmessung mittels Korrelationsfunktion

Country Status (5)

Country Link
US (1) US5877036A (de)
EP (1) EP0793147B1 (de)
JP (1) JP2842362B2 (de)
KR (1) KR100249414B1 (de)
DE (1) DE69702151T2 (de)

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JPH11258776A (ja) * 1998-03-13 1999-09-24 Sony Corp 重ね合わせ測定パターン、フォトマスク、重ね合わせ測定方法及び重ね合わせ測定装置
JPH11325877A (ja) * 1998-03-31 1999-11-26 Siemens Ag 測定誤差を減少させるための方法及び装置
IL125337A0 (en) * 1998-07-14 1999-03-12 Nova Measuring Instr Ltd Method and apparatus for lithography monitoring and process control
EP0973069A3 (de) * 1998-07-14 2006-10-04 Nova Measuring Instruments Limited Kontrollgerät und photolithographisches Verfahren zur Behandlung von Substraten
KR100388755B1 (ko) * 1998-08-11 2003-08-19 동부전자 주식회사 반도체 패턴의 크리티컬 디메죤타겟 및 크리티컬 디멘죤 측정방법
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6277658B1 (en) * 1999-03-29 2001-08-21 Taiwan Semiconductor Manufacturing Company Method for monitoring alignment mark shielding
IL130874A (en) 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US8531678B2 (en) 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
KR100827741B1 (ko) * 2000-07-17 2008-05-07 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 임프린트 리소그래피 공정을 위한 자동 유체 분배 방법 및시스템
EP1390975A2 (de) * 2000-08-21 2004-02-25 The Board Of Regents, The University Of Texas System Translationstufe auf basis von biegung
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
CN100365507C (zh) 2000-10-12 2008-01-30 德克萨斯州大学系统董事会 用于室温下低压微刻痕和毫微刻痕光刻的模板
KR100493410B1 (ko) * 2001-03-15 2005-06-07 주식회사 하이닉스반도체 얼라인먼트 마크
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
KR100395909B1 (ko) * 2001-06-29 2003-08-27 주식회사 하이닉스반도체 반도체 장치의 오버레이 측정 패턴
KR20010088997A (ko) * 2001-08-31 2001-09-29 윤종태 반도체 공정에서 중첩도 측정 방법
US6737208B1 (en) * 2001-12-17 2004-05-18 Advanced Micro Devices, Inc. Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information
KR20030053224A (ko) * 2001-12-22 2003-06-28 주식회사 하이닉스반도체 반도체 제조용 중첩도 측정 패턴
JP2003224057A (ja) * 2002-01-30 2003-08-08 Hitachi Ltd 半導体装置の製造方法
US7804994B2 (en) 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) * 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US6957119B2 (en) * 2002-09-09 2005-10-18 Macronix International Co., Ltd. Method for monitoring matched machine overlay
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7323130B2 (en) * 2002-12-13 2008-01-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7075639B2 (en) * 2003-04-25 2006-07-11 Kla-Tencor Technologies Corporation Method and mark for metrology of phase errors on phase shift masks
US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US20050160934A1 (en) * 2004-01-23 2005-07-28 Molecular Imprints, Inc. Materials and methods for imprint lithography
US7608468B1 (en) 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
US7346878B1 (en) 2003-07-02 2008-03-18 Kla-Tencor Technologies Corporation Apparatus and methods for providing in-chip microtargets for metrology or inspection
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7136150B2 (en) * 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US20050106321A1 (en) * 2003-11-14 2005-05-19 Molecular Imprints, Inc. Dispense geometery to achieve high-speed filling and throughput
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) * 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050276919A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method for dispensing a fluid on a substrate
US20050275311A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Compliant device for nano-scale manufacturing
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
EP1774407B1 (de) * 2004-06-03 2017-08-09 Board of Regents, The University of Texas System System und verfahren zur verbesserung von ausrichtung und overlay für die mikrolithographie
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US20070231421A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7630067B2 (en) 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7292326B2 (en) * 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
JP5198071B2 (ja) * 2004-12-01 2013-05-15 モレキュラー・インプリンツ・インコーポレーテッド インプリントリソグラフィ・プロセスにおける熱管理のための露光方法
US20060145398A1 (en) * 2004-12-30 2006-07-06 Board Of Regents, The University Of Texas System Release layer comprising diamond-like carbon (DLC) or doped DLC with tunable composition for imprint lithography templates and contact masks
US7557921B1 (en) 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
US20070228608A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Preserving Filled Features when Vacuum Wiping
JP5306989B2 (ja) 2006-04-03 2013-10-02 モレキュラー・インプリンツ・インコーポレーテッド 複数のフィールド及びアライメント・マークを有する基板を同時にパターニングする方法
JP5027468B2 (ja) * 2006-09-15 2012-09-19 日本ミクロコーティング株式会社 プローブクリーニング用又はプローブ加工用シート、及びプローブ加工方法
CN103003754B (zh) 2010-07-19 2015-03-11 Asml荷兰有限公司 用于确定重叠误差的方法和设备
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US8837810B2 (en) * 2012-03-27 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for alignment in semiconductor device fabrication
US9158209B2 (en) * 2012-10-19 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of overlay prediction
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2018089217A1 (en) * 2016-11-11 2018-05-17 Applied Materials, Inc. Hybrid laser and implant treatment for overlay error correction
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method

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JPS57102017A (en) * 1980-12-17 1982-06-24 Hitachi Ltd Pattern detector
US4679942A (en) * 1984-02-24 1987-07-14 Nippon Kogaku K. K. Method of aligning a semiconductor substrate and a photomask
EP0163199A3 (de) * 1984-05-29 1988-09-14 Siemens Aktiengesellschaft Verfahren und Vorrichtung zur Ermittlung von Deckungsfehlern zwischen nacheinander fotolithografisch auf eine Halbleiterscheibe zu übertragenden Strukturen
US5543921A (en) * 1989-05-08 1996-08-06 Canon Kabushiki Kaisha Aligning method utilizing reliability weighting coefficients
US5124927A (en) * 1990-03-02 1992-06-23 International Business Machines Corp. Latent-image control of lithography tools
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JP3284641B2 (ja) * 1992-09-03 2002-05-20 ソニー株式会社 重ね合わせ精度測定機の測定条件の最適化方法、並びにアラインメントマーク形状あるいは露光装置におけるアラインメントマーク測定方式の最適化方法
US5438413A (en) * 1993-03-03 1995-08-01 Kla Instruments Corporation Process for measuring overlay misregistration during semiconductor wafer fabrication

Also Published As

Publication number Publication date
JP2842362B2 (ja) 1999-01-06
DE69702151T2 (de) 2001-06-21
US5877036A (en) 1999-03-02
JPH09237749A (ja) 1997-09-09
KR100249414B1 (ko) 2000-03-15
EP0793147A1 (de) 1997-09-03
EP0793147B1 (de) 2000-05-31
KR970063625A (ko) 1997-09-12

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee