DE69701897D1 - Photorezeptorelement, umfassend eine Schutzschicht mit spezifischer Aussenoberfläche, und Verfahren zu dessen Herstellung - Google Patents

Photorezeptorelement, umfassend eine Schutzschicht mit spezifischer Aussenoberfläche, und Verfahren zu dessen Herstellung

Info

Publication number
DE69701897D1
DE69701897D1 DE69701897T DE69701897T DE69701897D1 DE 69701897 D1 DE69701897 D1 DE 69701897D1 DE 69701897 T DE69701897 T DE 69701897T DE 69701897 T DE69701897 T DE 69701897T DE 69701897 D1 DE69701897 D1 DE 69701897D1
Authority
DE
Germany
Prior art keywords
production
protective layer
specific outer
photoreceptor element
photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69701897T
Other languages
English (en)
Other versions
DE69701897T2 (de
Inventor
Jinichiro Hashizume
Shigenori Ueda
Makoto Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69701897D1 publication Critical patent/DE69701897D1/de
Publication of DE69701897T2 publication Critical patent/DE69701897T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G7/00—Selection of materials for use in image-receiving members, i.e. for reversal by physical contact; Manufacture thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08285—Carbon-based
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/147—Cover layers
    • G03G5/14704—Cover layers comprising inorganic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE69701897T 1996-01-19 1997-01-20 Photorezeptorelement, umfassend eine Schutzschicht mit spezifischer Aussenoberfläche, und Verfahren zu dessen Herstellung Expired - Lifetime DE69701897T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02484596A JP3530667B2 (ja) 1996-01-19 1996-01-19 電子写真感光体およびその製造方法

Publications (2)

Publication Number Publication Date
DE69701897D1 true DE69701897D1 (de) 2000-06-15
DE69701897T2 DE69701897T2 (de) 2000-12-07

Family

ID=12149563

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69701897T Expired - Lifetime DE69701897T2 (de) 1996-01-19 1997-01-20 Photorezeptorelement, umfassend eine Schutzschicht mit spezifischer Aussenoberfläche, und Verfahren zu dessen Herstellung

Country Status (6)

Country Link
US (1) US5849446A (de)
EP (1) EP0785475B1 (de)
JP (1) JP3530667B2 (de)
KR (1) KR100199078B1 (de)
CN (1) CN1095096C (de)
DE (1) DE69701897T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001521A (en) * 1997-10-29 1999-12-14 Canon Kabushiki Kaisha Electrophotographic photosensitive member
JP3507322B2 (ja) 1997-12-24 2004-03-15 キヤノン株式会社 電子写真装置
US6238832B1 (en) * 1997-12-25 2001-05-29 Canon Kabushiki Kaisha Electrophotographic photosensitive member
JP2000029232A (ja) * 1998-07-10 2000-01-28 Canon Inc 画像形成装置
US6821571B2 (en) * 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
JP3913067B2 (ja) 2001-01-31 2007-05-09 キヤノン株式会社 電子写真用感光体、その製造方法、ならびに電子写真装置
JP3913123B2 (ja) * 2001-06-28 2007-05-09 キヤノン株式会社 電子写真感光体の製造方法
JP4562163B2 (ja) * 2001-09-28 2010-10-13 キヤノン株式会社 電子写真感光体の製造方法及び電子写真感光体
US20060246218A1 (en) * 2005-04-29 2006-11-02 Guardian Industries Corp. Hydrophilic DLC on substrate with barrier discharge pyrolysis treatment
WO2009142164A1 (ja) * 2008-05-21 2009-11-26 キヤノン株式会社 負帯電用電子写真感光体、画像形成方法および電子写真装置
JP4580028B2 (ja) * 2008-07-25 2010-11-10 キヤノン株式会社 画像形成方法及び画像形成装置
JP5121785B2 (ja) 2008-07-25 2013-01-16 キヤノン株式会社 電子写真感光体および電子写真装置
JP4612913B2 (ja) * 2008-12-26 2011-01-12 キヤノン株式会社 画像形成方法
JP2013509701A (ja) * 2009-10-30 2013-03-14 ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング 堆積物の除去方法
JP5607499B2 (ja) * 2009-11-17 2014-10-15 キヤノン株式会社 電子写真感光体および電子写真装置
JP5653186B2 (ja) * 2009-11-25 2015-01-14 キヤノン株式会社 電子写真装置
JP5675287B2 (ja) * 2009-11-26 2015-02-25 キヤノン株式会社 電子写真感光体および電子写真装置
JP5675289B2 (ja) * 2009-11-26 2015-02-25 キヤノン株式会社 電子写真感光体および電子写真装置
JP5675292B2 (ja) * 2009-11-27 2015-02-25 キヤノン株式会社 電子写真感光体および電子写真装置
JP6372436B2 (ja) * 2015-07-16 2018-08-15 信越半導体株式会社 半導体装置の作製方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598831B2 (ja) 1977-09-10 1984-02-27 キヤノン株式会社 トナ−層形成装置
JPS57115551A (en) 1981-01-09 1982-07-19 Canon Inc Photoconductive material
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
JPS58144865A (ja) 1982-02-22 1983-08-29 Konishiroku Photo Ind Co Ltd 現像方法
JPS607451A (ja) 1983-06-28 1985-01-16 Canon Inc 現像装置
DE3572198D1 (en) 1984-02-14 1989-09-14 Energy Conversion Devices Inc Method and apparatus for making electrophotographic devices
US4664999A (en) * 1984-10-16 1987-05-12 Oki Electric Industry Co., Ltd. Method of making electrophotographic member with a-Si photoconductive layer
US4675265A (en) 1985-03-26 1987-06-23 Fuji Electric Co., Ltd. Electrophotographic light-sensitive element with amorphous C overlayer
US5139906A (en) * 1989-11-30 1992-08-18 Minolta Camera Kabushiki Kaisha Photosensitive medium with a protective layer of amorphous hydrocarbon having an absorption coefficient greater than 10,000 cm-1
US5392098A (en) * 1991-05-30 1995-02-21 Canon Kabushiki Kaisha Electrophotographic apparatus with amorphous silicon-carbon photosensitive member driven relative to light source
EP0531625B1 (de) * 1991-05-30 1997-08-20 Canon Kabushiki Kaisha Lichtempfindliches Element
JP3122281B2 (ja) 1993-05-06 2001-01-09 キヤノン株式会社 電子写真用光受容部材の形成方法
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber

Also Published As

Publication number Publication date
US5849446A (en) 1998-12-15
DE69701897T2 (de) 2000-12-07
EP0785475A3 (de) 1998-01-28
CN1168489A (zh) 1997-12-24
JP3530667B2 (ja) 2004-05-24
EP0785475B1 (de) 2000-05-10
JPH09197694A (ja) 1997-07-31
KR970059848A (ko) 1997-08-12
EP0785475A2 (de) 1997-07-23
KR100199078B1 (ko) 1999-06-15
CN1095096C (zh) 2002-11-27

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