DE69700103T2 - Quantum Cascade Laser - Google Patents

Quantum Cascade Laser

Info

Publication number
DE69700103T2
DE69700103T2 DE1997600103 DE69700103T DE69700103T2 DE 69700103 T2 DE69700103 T2 DE 69700103T2 DE 1997600103 DE1997600103 DE 1997600103 DE 69700103 T DE69700103 T DE 69700103T DE 69700103 T2 DE69700103 T2 DE 69700103T2
Authority
DE
Germany
Prior art keywords
quantum cascade
cascade laser
laser
quantum
cascade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1997600103
Other languages
English (en)
Other versions
DE69700103D1 (de
Inventor
Federico Capasso
Jerome Faist
Alfred Yi Cho
Albert Lee Hutchinson
Gaetano Scamarcio
Carlo Sirtori
Deborah Lee Sivco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/744,292 external-priority patent/US5745516A/en
Priority claimed from US08/841,059 external-priority patent/US5936989A/en
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE69700103D1 publication Critical patent/DE69700103D1/de
Application granted granted Critical
Publication of DE69700103T2 publication Critical patent/DE69700103T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
DE1997600103 1996-11-06 1997-10-28 Quantum Cascade Laser Expired - Lifetime DE69700103T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/744,292 US5745516A (en) 1996-11-06 1996-11-06 Article comprising a unipolar superlattice laser
US08/841,059 US5936989A (en) 1997-04-29 1997-04-29 Quantum cascade laser

Publications (2)

Publication Number Publication Date
DE69700103D1 DE69700103D1 (de) 1999-03-11
DE69700103T2 true DE69700103T2 (de) 1999-07-15

Family

ID=27114293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1997600103 Expired - Lifetime DE69700103T2 (de) 1996-11-06 1997-10-28 Quantum Cascade Laser

Country Status (3)

Country Link
EP (1) EP0841731B1 (de)
JP (1) JP3159946B2 (de)
DE (1) DE69700103T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10119618A1 (de) * 2001-04-21 2002-10-24 Univ Konstanz Optischer Mikro-Gassensor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137817A (en) * 1998-06-12 2000-10-24 Lucent Technologies Inc. Quantum cascade laser
US6055254A (en) * 1998-09-23 2000-04-25 Lucent Technologies Inc. Quantum cascade light emitter with pre-biased internal electronic potential
US6148012A (en) * 1998-10-21 2000-11-14 Lucent Technologies Inc. Multiple wavelength quantum cascade light source
DE10061234C2 (de) * 2000-12-08 2003-01-16 Paul Drude Inst Fuer Festkoerp Unipolarer Halbleiterlaser ohne Injektionsschichten
JP4576086B2 (ja) * 2001-05-23 2010-11-04 明広 石田 光機能性化合物半導体超格子構造物の製造方法および光機能性多層体の製造方法
US7359418B2 (en) 2003-02-13 2008-04-15 Hamamatsu Photonics K.K. Quantum cascade laser
US7558305B2 (en) * 2003-12-31 2009-07-07 Wisconsin Alumni Research Foundation Intersubband mid-infrared electroluminescent semiconductor devices
JP2006310784A (ja) * 2005-03-28 2006-11-09 National Institute Of Information & Communication Technology 量子カスケードレーザ
JP5641667B2 (ja) 2007-01-18 2014-12-17 浜松ホトニクス株式会社 量子カスケードレーザ
JP5523759B2 (ja) 2009-07-31 2014-06-18 浜松ホトニクス株式会社 量子カスケードレーザ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5509025A (en) * 1994-04-04 1996-04-16 At&T Corp. Unipolar semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10119618A1 (de) * 2001-04-21 2002-10-24 Univ Konstanz Optischer Mikro-Gassensor

Also Published As

Publication number Publication date
EP0841731A1 (de) 1998-05-13
JP3159946B2 (ja) 2001-04-23
EP0841731B1 (de) 1999-01-20
DE69700103D1 (de) 1999-03-11
JPH10144995A (ja) 1998-05-29

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