DE69633726D1 - Verfahren und vorrichtung zum steuern der temperatur eines wafers - Google Patents
Verfahren und vorrichtung zum steuern der temperatur eines wafersInfo
- Publication number
- DE69633726D1 DE69633726D1 DE69633726T DE69633726T DE69633726D1 DE 69633726 D1 DE69633726 D1 DE 69633726D1 DE 69633726 T DE69633726 T DE 69633726T DE 69633726 T DE69633726 T DE 69633726T DE 69633726 D1 DE69633726 D1 DE 69633726D1
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- temperature
- chuck
- controlling
- pressurized gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US474009 | 1995-06-07 | ||
US08/474,009 US6140612A (en) | 1995-06-07 | 1995-06-07 | Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck |
PCT/US1996/009978 WO1996041369A1 (en) | 1995-06-07 | 1996-06-07 | Method and apparatus for controlling a temperature of a wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69633726D1 true DE69633726D1 (de) | 2004-12-02 |
DE69633726T2 DE69633726T2 (de) | 2005-10-27 |
Family
ID=23881851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69633726T Expired - Lifetime DE69633726T2 (de) | 1995-06-07 | 1996-06-07 | Verfahren und vorrichtung zum steuern der temperatur eines wafers |
Country Status (7)
Country | Link |
---|---|
US (2) | US6140612A (de) |
EP (1) | EP0834188B1 (de) |
JP (1) | JP4034344B2 (de) |
KR (1) | KR19990022554A (de) |
AT (1) | ATE281001T1 (de) |
DE (1) | DE69633726T2 (de) |
WO (1) | WO1996041369A1 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6231776B1 (en) | 1995-12-04 | 2001-05-15 | Daniel L. Flamm | Multi-temperature processing |
US5920797A (en) * | 1996-12-03 | 1999-07-06 | Applied Materials, Inc. | Method for gaseous substrate support |
WO1999009587A2 (en) | 1997-08-13 | 1999-02-25 | Applied Materials, Inc. | Method of etching copper for semiconductor devices |
JP2000021964A (ja) * | 1998-07-06 | 2000-01-21 | Ngk Insulators Ltd | 静電チャックのパーティクル発生低減方法および半導体製造装置 |
US6449428B2 (en) * | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
US6110288A (en) * | 1998-12-17 | 2000-08-29 | Eaton Corporation | Temperature probe and measurement method for low pressure process |
US6635580B1 (en) * | 1999-04-01 | 2003-10-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Apparatus and method for controlling wafer temperature in a plasma etcher |
US6803546B1 (en) * | 1999-07-08 | 2004-10-12 | Applied Materials, Inc. | Thermally processing a substrate |
US6481886B1 (en) * | 2000-02-24 | 2002-11-19 | Applied Materials Inc. | Apparatus for measuring pedestal and substrate temperature in a semiconductor wafer processing system |
US6353210B1 (en) * | 2000-04-11 | 2002-03-05 | Applied Materials Inc. | Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe |
KR100679254B1 (ko) * | 2000-11-20 | 2007-02-05 | 삼성전자주식회사 | 반도체장치 세정설비 및 그 운영방법 |
US7080940B2 (en) * | 2001-04-20 | 2006-07-25 | Luxtron Corporation | In situ optical surface temperature measuring techniques and devices |
US6572265B1 (en) * | 2001-04-20 | 2003-06-03 | Luxtron Corporation | In situ optical surface temperature measuring techniques and devices |
CA2349033A1 (en) * | 2001-05-28 | 2002-11-28 | Optenia, Inc. | Initial plasma treatment for vertical dry etching of sio2 |
EP1573784A2 (de) * | 2002-12-09 | 2005-09-14 | Koninklijke Philips Electronics N.V. | System und verfahren zur unterdrückung der wafertemperaturdrift in kaltwand-cvd-einrichtungen |
DE102004047767B3 (de) * | 2004-09-30 | 2006-08-10 | Infineon Technologies Ag | Verfahren zur Silizierung von Siliziumgrenzflächen mit PVD-Anlagen |
US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
US8038796B2 (en) * | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
GB0509499D0 (en) * | 2005-05-11 | 2005-06-15 | Univ Surrey | Use of thermal barrier for low temperature growth of nanostructures using top-down heating approach |
US7802917B2 (en) * | 2005-08-05 | 2010-09-28 | Lam Research Corporation | Method and apparatus for chuck thermal calibration |
US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
US8021521B2 (en) * | 2005-10-20 | 2011-09-20 | Applied Materials, Inc. | Method for agile workpiece temperature control in a plasma reactor using a thermal model |
JP5003102B2 (ja) * | 2006-10-27 | 2012-08-15 | 東京エレクトロン株式会社 | 静電チャックの診断方法、真空処理装置及び記憶媒体 |
US7972471B2 (en) * | 2007-06-29 | 2011-07-05 | Lam Research Corporation | Inductively coupled dual zone processing chamber with single planar antenna |
US8002463B2 (en) * | 2008-06-13 | 2011-08-23 | Asm International N.V. | Method and device for determining the temperature of a substrate |
CN101990707B (zh) * | 2008-09-30 | 2013-03-06 | 东京毅力科创株式会社 | 基板的异常载置状态的检测方法、基板处理方法、计算机可读取的存储介质以及基板处理装置 |
US8313612B2 (en) * | 2009-03-24 | 2012-11-20 | Lam Research Corporation | Method and apparatus for reduction of voltage potential spike during dechucking |
US8481433B2 (en) * | 2009-03-31 | 2013-07-09 | Applied Materials, Inc. | Methods and apparatus for forming nitrogen-containing layers |
SG10201407637TA (en) * | 2009-11-30 | 2015-01-29 | Lam Res Corp | An electrostatic chuck with an angled sidewall |
DE202010015933U1 (de) | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
JP5478280B2 (ja) * | 2010-01-27 | 2014-04-23 | 東京エレクトロン株式会社 | 基板加熱装置および基板加熱方法、ならびに基板処理システム |
US9171702B2 (en) | 2010-06-30 | 2015-10-27 | Lam Research Corporation | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
US8826855B2 (en) | 2010-06-30 | 2014-09-09 | Lam Research Corporation | C-shaped confinement ring for a plasma processing chamber |
US8485128B2 (en) | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
US9728429B2 (en) | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
US9054048B2 (en) | 2011-07-05 | 2015-06-09 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer on a substrate |
US9613839B2 (en) | 2014-11-19 | 2017-04-04 | Varian Semiconductor Equipment Associates, Inc. | Control of workpiece temperature via backside gas flow |
JP2016136554A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR20200131912A (ko) * | 2018-04-12 | 2020-11-24 | 램 리써치 코포레이션 | 기판 프로세싱 동안 기판 온도 결정 및 제어 |
US11630001B2 (en) * | 2019-12-10 | 2023-04-18 | Applied Materials, Inc. | Apparatus for measuring temperature in a vacuum and microwave environment |
US11204206B2 (en) | 2020-05-18 | 2021-12-21 | Envertic Thermal Systems, Llc | Thermal switch |
US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
US20220270865A1 (en) * | 2021-02-25 | 2022-08-25 | Kurt J. Lesker Company | Pressure-Induced Temperature Modification During Atomic Scale Processing |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
US4542298A (en) * | 1983-06-09 | 1985-09-17 | Varian Associates, Inc. | Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer |
US4527620A (en) * | 1984-05-02 | 1985-07-09 | Varian Associates, Inc. | Apparatus for controlling thermal transfer in a cyclic vacuum processing system |
US4615755A (en) * | 1985-08-07 | 1986-10-07 | The Perkin-Elmer Corporation | Wafer cooling and temperature control for a plasma etching system |
JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
US4842683A (en) * | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
WO1988009054A1 (en) * | 1987-05-06 | 1988-11-17 | Labtam Limited | Electrostatic chuck using ac field excitation |
KR0129663B1 (ko) * | 1988-01-20 | 1998-04-06 | 고다까 토시오 | 에칭 장치 및 방법 |
US4999320A (en) * | 1988-03-31 | 1991-03-12 | Texas Instruments Incorporated | Method for suppressing ionization avalanches in a helium wafer cooling assembly |
JP2680338B2 (ja) * | 1988-03-31 | 1997-11-19 | 株式会社東芝 | 静電チャック装置 |
US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
JP3129452B2 (ja) * | 1990-03-13 | 2001-01-29 | 富士電機株式会社 | 静電チャック |
US5673750A (en) * | 1990-05-19 | 1997-10-07 | Hitachi, Ltd. | Vacuum processing method and apparatus |
US5556204A (en) * | 1990-07-02 | 1996-09-17 | Hitachi, Ltd. | Method and apparatus for detecting the temperature of a sample |
US5096536A (en) * | 1990-06-12 | 1992-03-17 | Micron Technology, Inc. | Method and apparatus useful in the plasma etching of semiconductor materials |
KR0165898B1 (ko) * | 1990-07-02 | 1999-02-01 | 미다 가쓰시게 | 진공처리방법 및 장치 |
JPH04196528A (ja) * | 1990-11-28 | 1992-07-16 | Toshiba Corp | マグネトロンエッチング装置 |
US5267607A (en) * | 1991-05-28 | 1993-12-07 | Tokyo Electron Limited | Substrate processing apparatus |
JPH05166757A (ja) * | 1991-12-13 | 1993-07-02 | Tokyo Electron Ltd | 被処理体の温調装置 |
US5350479A (en) * | 1992-12-02 | 1994-09-27 | Applied Materials, Inc. | Electrostatic chuck for high power plasma processing |
US5676205A (en) * | 1993-10-29 | 1997-10-14 | Applied Materials, Inc. | Quasi-infinite heat source/sink |
US5738751A (en) * | 1994-09-01 | 1998-04-14 | Applied Materials, Inc. | Substrate support having improved heat transfer |
-
1995
- 1995-06-07 US US08/474,009 patent/US6140612A/en not_active Expired - Lifetime
-
1996
- 1996-06-07 JP JP50212597A patent/JP4034344B2/ja not_active Expired - Lifetime
- 1996-06-07 EP EP96923274A patent/EP0834188B1/de not_active Expired - Lifetime
- 1996-06-07 DE DE69633726T patent/DE69633726T2/de not_active Expired - Lifetime
- 1996-06-07 AT AT96923274T patent/ATE281001T1/de not_active IP Right Cessation
- 1996-06-07 WO PCT/US1996/009978 patent/WO1996041369A1/en active IP Right Grant
- 1996-06-07 KR KR1019970709035A patent/KR19990022554A/ko not_active Application Discontinuation
-
2000
- 2000-06-02 US US09/588,122 patent/US6303895B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4034344B2 (ja) | 2008-01-16 |
ATE281001T1 (de) | 2004-11-15 |
KR19990022554A (ko) | 1999-03-25 |
EP0834188A1 (de) | 1998-04-08 |
WO1996041369A1 (en) | 1996-12-19 |
JPH11507473A (ja) | 1999-06-29 |
US6140612A (en) | 2000-10-31 |
DE69633726T2 (de) | 2005-10-27 |
EP0834188B1 (de) | 2004-10-27 |
US6303895B1 (en) | 2001-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |