DE69623183T2 - Polierlösung für Metalle auf Kupferbasis und Verfahren zur Herstellung eines Halbleiterbauelements - Google Patents

Polierlösung für Metalle auf Kupferbasis und Verfahren zur Herstellung eines Halbleiterbauelements

Info

Publication number
DE69623183T2
DE69623183T2 DE69623183T DE69623183T DE69623183T2 DE 69623183 T2 DE69623183 T2 DE 69623183T2 DE 69623183 T DE69623183 T DE 69623183T DE 69623183 T DE69623183 T DE 69623183T DE 69623183 T2 DE69623183 T2 DE 69623183T2
Authority
DE
Germany
Prior art keywords
copper
producing
semiconductor device
polishing solution
based metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623183T
Other languages
English (en)
Other versions
DE69623183D1 (de
Inventor
Hideaki Hirabayashi
Naoaki Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69623183D1 publication Critical patent/DE69623183D1/de
Application granted granted Critical
Publication of DE69623183T2 publication Critical patent/DE69623183T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE69623183T 1995-06-08 1996-06-07 Polierlösung für Metalle auf Kupferbasis und Verfahren zur Herstellung eines Halbleiterbauelements Expired - Lifetime DE69623183T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14204595 1995-06-08

Publications (2)

Publication Number Publication Date
DE69623183D1 DE69623183D1 (de) 2002-10-02
DE69623183T2 true DE69623183T2 (de) 2003-05-08

Family

ID=15306119

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623183T Expired - Lifetime DE69623183T2 (de) 1995-06-08 1996-06-07 Polierlösung für Metalle auf Kupferbasis und Verfahren zur Herstellung eines Halbleiterbauelements

Country Status (4)

Country Link
US (2) US6046110A (de)
EP (1) EP0747939B1 (de)
KR (1) KR100214749B1 (de)
DE (1) DE69623183T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012003990B4 (de) 2011-10-27 2021-07-08 Shin-Etsu Handotai Co., Ltd. Aufschlämmung und Verfahren zum Herstellen einer Aufschlämmung

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JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
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US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
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US6511906B1 (en) * 2001-08-30 2003-01-28 Micron Technology, Inc. Selective CMP scheme
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WO2005053904A1 (en) * 2003-11-26 2005-06-16 3M Innovative Properties Company Method of abrading a workpiece
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
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US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
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KR20150014924A (ko) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
KR101350419B1 (ko) * 2013-09-27 2014-01-16 재단법인차세대융합기술연구원 변속 장치
EP3674442A1 (de) 2018-12-24 2020-07-01 IMEC vzw Ätzen mithilfe einer elektrolysierten chloridlösung
KR102367056B1 (ko) * 2020-02-27 2022-02-25 주식회사 케이씨텍 화학적 기계적 연마용 슬러리 조성물

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112012003990B4 (de) 2011-10-27 2021-07-08 Shin-Etsu Handotai Co., Ltd. Aufschlämmung und Verfahren zum Herstellen einer Aufschlämmung

Also Published As

Publication number Publication date
US6521574B1 (en) 2003-02-18
EP0747939A3 (de) 1998-10-14
EP0747939B1 (de) 2002-08-28
DE69623183D1 (de) 2002-10-02
EP0747939A2 (de) 1996-12-11
KR970003592A (ko) 1997-01-28
KR100214749B1 (ko) 1999-08-02
US6046110A (en) 2000-04-04

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