DE69622109D1 - Eine Dünnschicht-Sonnenzelle, die einen Verbindungshalbleiter vom Typ-I-III-VI(2) als Absorptionsschicht aufweist, und Verfahren zu ihrer Herstellung - Google Patents

Eine Dünnschicht-Sonnenzelle, die einen Verbindungshalbleiter vom Typ-I-III-VI(2) als Absorptionsschicht aufweist, und Verfahren zu ihrer Herstellung

Info

Publication number
DE69622109D1
DE69622109D1 DE69622109T DE69622109T DE69622109D1 DE 69622109 D1 DE69622109 D1 DE 69622109D1 DE 69622109 T DE69622109 T DE 69622109T DE 69622109 T DE69622109 T DE 69622109T DE 69622109 D1 DE69622109 D1 DE 69622109D1
Authority
DE
Germany
Prior art keywords
iii
thin
production
solar cell
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622109T
Other languages
English (en)
Other versions
DE69622109T2 (de
Inventor
Takahiro Wada
Mikihiko Nishitani
Naoki Kohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69622109D1 publication Critical patent/DE69622109D1/de
Publication of DE69622109T2 publication Critical patent/DE69622109T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69622109T 1995-09-13 1996-09-13 Eine Dünnschicht-Sonnenzelle, die einen Verbindungshalbleiter vom Typ-I-III-VI(2) als Absorptionsschicht aufweist, und Verfahren zu ihrer Herstellung Expired - Lifetime DE69622109T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23582895A JP3244408B2 (ja) 1995-09-13 1995-09-13 薄膜太陽電池及びその製造方法

Publications (2)

Publication Number Publication Date
DE69622109D1 true DE69622109D1 (de) 2002-08-08
DE69622109T2 DE69622109T2 (de) 2003-03-06

Family

ID=16991867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622109T Expired - Lifetime DE69622109T2 (de) 1995-09-13 1996-09-13 Eine Dünnschicht-Sonnenzelle, die einen Verbindungshalbleiter vom Typ-I-III-VI(2) als Absorptionsschicht aufweist, und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (1) US5858121A (de)
EP (1) EP0763859B1 (de)
JP (1) JP3244408B2 (de)
DE (1) DE69622109T2 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3244408B2 (ja) * 1995-09-13 2002-01-07 松下電器産業株式会社 薄膜太陽電池及びその製造方法
US6107562A (en) * 1998-03-24 2000-08-22 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method for manufacturing the same, and solar cell using the same
US20040034686A1 (en) * 2000-02-22 2004-02-19 David Guthrie System and method for delivering targeted data to a subscriber base via a computer network
US6259016B1 (en) 1999-03-05 2001-07-10 Matsushita Electric Industrial Co., Ltd. Solar cell
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7507903B2 (en) * 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US6372538B1 (en) * 2000-03-16 2002-04-16 University Of Delaware Fabrication of thin-film, flexible photovoltaic module
JP4662616B2 (ja) 2000-10-18 2011-03-30 パナソニック株式会社 太陽電池
US6736986B2 (en) 2001-09-20 2004-05-18 Heliovolt Corporation Chemical synthesis of layers, coatings or films using surfactants
US6787012B2 (en) * 2001-09-20 2004-09-07 Helio Volt Corp Apparatus for the synthesis of layers, coatings or films
US6500733B1 (en) * 2001-09-20 2002-12-31 Heliovolt Corporation Synthesis of layers, coatings or films using precursor layer exerted pressure containment
US6559372B2 (en) * 2001-09-20 2003-05-06 Heliovolt Corporation Photovoltaic devices and compositions for use therein
US6881647B2 (en) * 2001-09-20 2005-04-19 Heliovolt Corporation Synthesis of layers, coatings or films using templates
WO2003026028A2 (en) * 2001-09-20 2003-03-27 Heliovolt Corporation Apparatus for the synthesis of layers, coatings or films
JP2003185985A (ja) * 2001-12-14 2003-07-03 Fujitsu Ltd 光回路装置及びその製造方法
WO2003105238A1 (en) * 2002-06-11 2003-12-18 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Polycrystalline thin-film solar cells
US7641937B2 (en) * 2003-07-26 2010-01-05 In-Solar Tech Co., Ltd. Method for manufacturing absorber layers for solar cell
JP2006049768A (ja) * 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Ｃｉｓ系化合物半導体薄膜太陽電池及び該太陽電池の光吸収層の製造方法
KR100850000B1 (ko) * 2005-09-06 2008-08-01 주식회사 엘지화학 태양전지 흡수층의 제조방법
US20070160763A1 (en) 2006-01-12 2007-07-12 Stanbery Billy J Methods of making controlled segregated phase domain structures
AU2007204812B2 (en) * 2006-01-12 2010-05-13 Heliovolt Corporation Apparatus for making controlled segregated phase domain structures
US8084685B2 (en) * 2006-01-12 2011-12-27 Heliovolt Corporation Apparatus for making controlled segregated phase domain structures
US7767904B2 (en) * 2006-01-12 2010-08-03 Heliovolt Corporation Compositions including controlled segregated phase domain structures
US8101858B2 (en) * 2006-03-14 2012-01-24 Corus Technology B.V. Chalcopyrite semiconductor based photovoltaic solar cell comprising a metal substrate, coated metal substrate for a photovoltaic solar cell and manufacturing method thereof
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US8034317B2 (en) * 2007-06-18 2011-10-11 Heliovolt Corporation Assemblies of anisotropic nanoparticles
US20100252110A1 (en) * 2007-09-28 2010-10-07 Fujifilm Corporation Solar cell
JP4620105B2 (ja) 2007-11-30 2011-01-26 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の製造方法
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
JP2009259872A (ja) * 2008-04-11 2009-11-05 Rohm Co Ltd 光電変換装置およびその製造方法、および固体撮像装置
US20100285218A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
WO2011065998A1 (en) * 2008-12-18 2011-06-03 Veeco Instruments Inc. Linear deposition source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
AU2010206814A1 (en) 2009-01-21 2011-08-11 Purdue Research Foundation Selenization of precursor layer containing CulnS2 nanoparticles
AU2010211053A1 (en) * 2009-02-04 2010-08-12 Heliovolt Corporation Method of forming an indium-containing transparent conductive oxide film, metal targets used in the method and photovoltaic devices utilizing said films
EP2435248A2 (de) * 2009-05-26 2012-04-04 Purdue Research Foundation Dünnfilme für photovoltaikzellen
US20100310770A1 (en) * 2009-06-05 2010-12-09 Baosheng Sang Process for synthesizing a thin film or composition layer via non-contact pressure containment
KR101245371B1 (ko) * 2009-06-19 2013-03-19 한국전자통신연구원 태양전지 및 그 제조방법
US8256621B2 (en) * 2009-09-11 2012-09-04 Pro-Pak Industries, Inc. Load tray and method for unitizing a palletized load
US20110094557A1 (en) * 2009-10-27 2011-04-28 International Business Machines Corporation Method of forming semiconductor film and photovoltaic device including the film
US10147604B2 (en) * 2009-10-27 2018-12-04 International Business Machines Corporation Aqueous-based method of forming semiconductor film and photovoltaic device including the film
KR101271753B1 (ko) * 2009-11-20 2013-06-05 한국전자통신연구원 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지
WO2011082179A1 (en) * 2009-12-28 2011-07-07 Global Solar Energy, Inc. Apparatus and methods of mixing and depositing thin film photovoltaic compositions
US8021641B2 (en) * 2010-02-04 2011-09-20 Alliance For Sustainable Energy, Llc Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom
TW201201373A (en) * 2010-03-23 2012-01-01 Kuraray Co Compound semiconductor particle composition, compound semiconductor film and method for producing the same, photoelectric conversion element and solar cell
JP5468962B2 (ja) * 2010-03-31 2014-04-09 本田技研工業株式会社 太陽電池の製造方法
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
KR101152202B1 (ko) * 2010-11-12 2012-06-15 영남대학교 산학협력단 Ｃｉｇｓ 태양광 흡수층 제조방법
US20120234392A1 (en) * 2011-03-17 2012-09-20 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
KR101686478B1 (ko) * 2015-04-22 2016-12-28 한국과학기술연구원 태양전지용 CIGSSe 박막 및 이의 제조방법, 이를 이용한 태양전지

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045409A (en) * 1987-11-27 1991-09-03 Atlantic Richfield Company Process for making thin film solar cell
US5141564A (en) * 1988-05-03 1992-08-25 The Boeing Company Mixed ternary heterojunction solar cell
DE59309438D1 (de) * 1992-09-22 1999-04-15 Siemens Ag Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
DE4333407C1 (de) * 1993-09-30 1994-11-17 Siemens Ag Solarzelle mit einer Chalkopyritabsorberschicht
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JP3244408B2 (ja) * 1995-09-13 2002-01-07 松下電器産業株式会社 薄膜太陽電池及びその製造方法

Also Published As

Publication number Publication date
EP0763859A3 (de) 1998-10-28
DE69622109T2 (de) 2003-03-06
JPH0982992A (ja) 1997-03-28
EP0763859A2 (de) 1997-03-19
US5858121A (en) 1999-01-12
JP3244408B2 (ja) 2002-01-07
EP0763859B1 (de) 2002-07-03

Similar Documents

Publication Publication Date Title
DE69622109D1 (de) Eine Dünnschicht-Sonnenzelle, die einen Verbindungshalbleiter vom Typ-I-III-VI(2) als Absorptionsschicht aufweist, und Verfahren zu ihrer Herstellung
DE69624981D1 (de) Solarzelle und Verfahren zu ihrer Herstellung
DE69224965D1 (de) Verbesserte solarzelle und verfahren zu ihrer herstellung
DE3781228D1 (de) Korrosionsbestaendige, amorphe oberflaechenlegierungen und verfahren zu ihrer herstellung.
DE69033676D1 (de) Zusammensetzungen, die von pflanzen produzierte glykopolypeptidmultimere enthalten, sowie verfahren zu deren herstellung
DE69630206D1 (de) Die unterhaut als ein wachstumssubstrat für zellen
DE69628188D1 (de) Monoolefin-polyen-copolymere, verfahren zu ihrer herstellung, zusammensetzungen die diese enthalten und daraus hergestellte formteile
DE69827319D1 (de) Solarzelle und Verfahren zu deren Herstellung
DE3678301D1 (de) Monolithisch integrierte optische halbleiteranordnung und verfahren zu ihrer herstellung.
DE3581002D1 (de) Hydroxyphenyltriazine, verfahren zu ihrer herstellung und ihre verwendung als uv-absorber.
DE3586822D1 (de) Halbleiteranordnung und verfahren zu deren herstellung.
DE4323799B4 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE69334075D1 (de) Verbesserte rückseiten-hydrierungstechnik für fehlerpassivierung in silizium-sonnenzellen.
DE69005032D1 (de) Optohalbleitervorrichtung und Verfahren zu ihrer Herstellung.
DE3778331D1 (de) Halbleiterspeicheranordnung und verfahren zu ihrer herstellung.
DE69433032D1 (de) VERFLÜSSIGENDE -[alpha]-AMYLASE, VERFAHREN ZU IHRER HERSTELLUNG, UND SIE ENTHALTENDE WASCHMITTELZUSAMMENSETZUNG
DE19882366T1 (de) Solarzelle und Verfahren zu ihrer Herstellung
DE69637701D1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE69735159D1 (de) Sonnenzelle und Verfahren für seine Herstellung
DE68920571D1 (de) Halbleiterlaser-Vorrichtung und Verfahren zu ihrer Herstellung.
DE58901518D1 (de) Isoxazoline, verfahren zu ihrer herstellung sowie ihre verwendung.
DE3778262D1 (de) Detergenszusammensetzung und verfahren zu ihrer herstellung.
DE3881074D1 (de) Nichtfluechtige, durch ultraviolette strahlung loeschbare halbleiterspeicheranordnung und verfahren zu ihrer herstellung.
DE69712128D1 (de) Optische Halbleiterkomponente sowie Verfahren zu ihrer Herstellung
DE69637578D1 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP