DE69334075D1 - Verbesserte rückseiten-hydrierungstechnik für fehlerpassivierung in silizium-sonnenzellen. - Google Patents
Verbesserte rückseiten-hydrierungstechnik für fehlerpassivierung in silizium-sonnenzellen.Info
- Publication number
- DE69334075D1 DE69334075D1 DE69334075T DE69334075T DE69334075D1 DE 69334075 D1 DE69334075 D1 DE 69334075D1 DE 69334075 T DE69334075 T DE 69334075T DE 69334075 T DE69334075 T DE 69334075T DE 69334075 D1 DE69334075 D1 DE 69334075D1
- Authority
- DE
- Germany
- Prior art keywords
- passivation
- error
- solar cells
- silicon solar
- hydrogenation technique
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000005984 hydrogenation reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000002161 passivation Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S136/00—Batteries: thermoelectric and photoelectric
- Y10S136/29—Testing, calibrating, treating, e.g. aging
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/125—Polycrystalline passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/128—Proton bombardment of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/153—Solar cells-implantations-laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/934,025 US5304509A (en) | 1992-08-24 | 1992-08-24 | Back-side hydrogenation technique for defect passivation in silicon solar cells |
US934025 | 1992-08-24 | ||
PCT/US1993/007938 WO1994005036A1 (en) | 1992-08-24 | 1993-08-24 | Improved back-side hydrogenation technique for defect passivation in silicon solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69334075D1 true DE69334075D1 (de) | 2006-11-30 |
DE69334075T2 DE69334075T2 (de) | 2007-05-31 |
Family
ID=25464833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69334075T Expired - Fee Related DE69334075T2 (de) | 1992-08-24 | 1993-08-24 | Verbesserte rückseiten-hydrierungstechnik für fehlerpassivierung in silizium-sonnenzellen. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5304509A (de) |
EP (1) | EP0656149B1 (de) |
AU (1) | AU4837893A (de) |
DE (1) | DE69334075T2 (de) |
WO (1) | WO1994005036A1 (de) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169497B2 (ja) * | 1993-12-24 | 2001-05-28 | 三菱電機株式会社 | 太陽電池の製造方法 |
US5429985A (en) * | 1994-01-18 | 1995-07-04 | Midwest Research Institute | Fabrication of optically reflecting ohmic contacts for semiconductor devices |
FR2715501B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
US5426061A (en) * | 1994-09-06 | 1995-06-20 | Midwest Research Institute | Impurity gettering in semiconductors |
US6489219B1 (en) * | 1995-11-09 | 2002-12-03 | Micron Technology, Inc. | Method of alloying a semiconductor device |
JP3865145B2 (ja) * | 1996-01-26 | 2007-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6291313B1 (en) | 1997-05-12 | 2001-09-18 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
US20070122997A1 (en) * | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US6146979A (en) | 1997-05-12 | 2000-11-14 | Silicon Genesis Corporation | Pressurized microbubble thin film separation process using a reusable substrate |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US6548382B1 (en) * | 1997-07-18 | 2003-04-15 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
US6291326B1 (en) | 1998-06-23 | 2001-09-18 | Silicon Genesis Corporation | Pre-semiconductor process implant and post-process film separation |
JP4174862B2 (ja) * | 1998-08-04 | 2008-11-05 | ソニー株式会社 | 薄膜トランジスタの製造方法および半導体装置の製造方法 |
US6165873A (en) * | 1998-11-27 | 2000-12-26 | Nec Corporation | Process for manufacturing a semiconductor integrated circuit device |
US6221740B1 (en) | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
AU6905000A (en) * | 1999-08-10 | 2001-03-05 | Silicon Genesis Corporation | A cleaving process to fabricate multilayered substrates using low implantation doses |
US6500732B1 (en) | 1999-08-10 | 2002-12-31 | Silicon Genesis Corporation | Cleaving process to fabricate multilayered substrates using low implantation doses |
US6263941B1 (en) | 1999-08-10 | 2001-07-24 | Silicon Genesis Corporation | Nozzle for cleaving substrates |
WO2001067503A1 (en) * | 2000-03-03 | 2001-09-13 | Midwest Research Institute | A1 processing for impurity gettering in silicon |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
US7354815B2 (en) * | 2003-11-18 | 2008-04-08 | Silicon Genesis Corporation | Method for fabricating semiconductor devices using strained silicon bearing material |
US8780343B2 (en) | 2006-07-28 | 2014-07-15 | Alliance For Sustainable Energy, Llc | Wafer screening device and methods for wafer screening |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US7811900B2 (en) * | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US20080128821A1 (en) * | 2006-12-04 | 2008-06-05 | Texas Instruments Incorporated | Semiconductor Device Manufactured Using Passivation of Crystal Domain Interfaces in Hybrid Orientation Technology |
US20090101202A1 (en) * | 2007-10-17 | 2009-04-23 | Industrial Technology Research Institute | Method of fast hydrogen passivation to solar cells made of crystalline silicon |
US7727866B2 (en) * | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
EP2253012A4 (de) * | 2008-03-13 | 2013-10-16 | Alliance Sustainable Energy | Optischer hohlraumofen zur halbleiterwaferverarbeitung |
US8330126B2 (en) * | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) * | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
US8598547B2 (en) * | 2010-06-29 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Handling beam glitches during ion implantation of workpieces |
DE102010049587A1 (de) | 2010-10-26 | 2012-04-26 | Evonik Degussa Gmbh | Verfahren zur elektrochemischen Wasserstoffpassivierung von Halbleiterschichten |
DE102010053214A1 (de) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Verfahren zur Wasserstoffpassivierung von Halbleiterschichten |
US20120289036A1 (en) * | 2011-05-11 | 2012-11-15 | Applied Materials, Inc. | Surface dose retention of dopants by pre-amorphization and post implant passivation treatments |
EP2863413A3 (de) * | 2012-05-21 | 2015-08-19 | NewSouth Innovations Pty Limited | Verbesserte Hydrierung von Siliciumsolarzellen |
TW201417319A (zh) | 2012-08-24 | 2014-05-01 | Ind Tech Res Inst | 矽晶太陽能電池及其矽晶太陽能電池模組 |
US10094988B2 (en) * | 2012-08-31 | 2018-10-09 | Micron Technology, Inc. | Method of forming photonics structures |
AU2014295816B2 (en) * | 2013-07-26 | 2018-09-13 | Newsouth Innovations Pty Limited | High concentration doping in silicon |
CN104638063B (zh) * | 2014-12-19 | 2016-08-24 | 陈恩深 | 一种太阳能电池的氢钝化方法 |
US10461212B2 (en) * | 2016-06-06 | 2019-10-29 | Newsouth Innovations Pty Limited | Method for processing silicon material |
CN109983559B (zh) * | 2016-11-22 | 2023-07-11 | 新南创新私人有限公司 | 提高用于光伏器件的晶圆性能的方法 |
CN110890445A (zh) * | 2019-12-09 | 2020-03-17 | 通威太阳能(眉山)有限公司 | 提升perc电池光电转换效率的方法 |
CN112071929A (zh) * | 2020-09-15 | 2020-12-11 | 新疆晶科能源有限公司 | 太阳能电池及磷、氢掺杂单晶硅的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4612698A (en) * | 1984-10-31 | 1986-09-23 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
US5010040A (en) * | 1988-12-30 | 1991-04-23 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
US5011782A (en) * | 1989-03-31 | 1991-04-30 | Electric Power Research Institute | Method of making passivated antireflective coating for photovoltaic cell |
US5030295A (en) * | 1990-02-12 | 1991-07-09 | Electric Power Research Institut | Radiation resistant passivation of silicon solar cells |
US5057439A (en) * | 1990-02-12 | 1991-10-15 | Electric Power Research Institute | Method of fabricating polysilicon emitters for solar cells |
-
1992
- 1992-08-24 US US07/934,025 patent/US5304509A/en not_active Expired - Lifetime
-
1993
- 1993-08-24 AU AU48378/93A patent/AU4837893A/en not_active Abandoned
- 1993-08-24 EP EP93921183A patent/EP0656149B1/de not_active Expired - Lifetime
- 1993-08-24 WO PCT/US1993/007938 patent/WO1994005036A1/en active IP Right Grant
- 1993-08-24 DE DE69334075T patent/DE69334075T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1994005036A1 (en) | 1994-03-03 |
EP0656149B1 (de) | 2006-10-18 |
AU4837893A (en) | 1994-03-15 |
DE69334075T2 (de) | 2007-05-31 |
EP0656149A4 (de) | 1997-01-22 |
US5304509A (en) | 1994-04-19 |
EP0656149A1 (de) | 1995-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |