DE69621451D1 - Isolierung von novolakharzen ohne destillation bei hochtemperatur und photoresistzusammensetzung daraus - Google Patents

Isolierung von novolakharzen ohne destillation bei hochtemperatur und photoresistzusammensetzung daraus

Info

Publication number
DE69621451D1
DE69621451D1 DE69621451T DE69621451T DE69621451D1 DE 69621451 D1 DE69621451 D1 DE 69621451D1 DE 69621451 T DE69621451 T DE 69621451T DE 69621451 T DE69621451 T DE 69621451T DE 69621451 D1 DE69621451 D1 DE 69621451D1
Authority
DE
Germany
Prior art keywords
distillation
insulation
high temperature
photoresist composition
novolac resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69621451T
Other languages
English (en)
Other versions
DE69621451T2 (de
Inventor
Dalil Rahman
Ping-Hung Lu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Clariant Finance BVI Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd filed Critical Clariant Finance BVI Ltd
Publication of DE69621451D1 publication Critical patent/DE69621451D1/de
Application granted granted Critical
Publication of DE69621451T2 publication Critical patent/DE69621451T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/10—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69621451T 1995-12-07 1996-11-21 Isolierung von novolakharzen ohne destillation bei hochtemperatur und photoresistzusammensetzung daraus Expired - Fee Related DE69621451T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56891695A 1995-12-07 1995-12-07
PCT/US1996/018781 WO1997020873A1 (en) 1995-12-07 1996-11-21 Isolation of novolak resin without high temperature distillation and photoresist composition therefrom

Publications (2)

Publication Number Publication Date
DE69621451D1 true DE69621451D1 (de) 2002-07-04
DE69621451T2 DE69621451T2 (de) 2002-11-28

Family

ID=24273293

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621451T Expired - Fee Related DE69621451T2 (de) 1995-12-07 1996-11-21 Isolierung von novolakharzen ohne destillation bei hochtemperatur und photoresistzusammensetzung daraus

Country Status (8)

Country Link
US (2) US5863700A (de)
EP (1) EP0865455B1 (de)
JP (1) JP2000501754A (de)
KR (1) KR100414854B1 (de)
CN (1) CN1137176C (de)
DE (1) DE69621451T2 (de)
TW (1) TW442710B (de)
WO (1) WO1997020873A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
US6045966A (en) * 1997-12-15 2000-04-04 Clariant Finance (Bvi) Limited Fractionated novolak resin and photoresist composition therefrom
US6512087B1 (en) * 2000-10-13 2003-01-28 Clariant Finance (Bvi) Limited Fractionation of resins using a static mixer and a liquid-liquid centrifuge
JP2014211490A (ja) * 2013-04-17 2014-11-13 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法及び電子デバイス
CN115819695B (zh) * 2022-12-09 2024-10-01 广东粤港澳大湾区黄埔材料研究院 一种光刻胶用改性酚醛树脂及其制备方法和应用

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60260611A (ja) * 1984-06-08 1985-12-23 Mitsubishi Petrochem Co Ltd 高分子量クレゾ−ルノボラツク樹脂の製造方法
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
DE3935876A1 (de) * 1989-10-27 1991-05-02 Basf Ag Strahlungsempfindliches gemisch
TW202504B (de) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
JPH03253860A (ja) * 1990-03-05 1991-11-12 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
US5614349A (en) * 1992-12-29 1997-03-25 Hoechst Celanese Corporation Using a Lewis base to control molecular weight of novolak resins
JP3319092B2 (ja) * 1993-11-08 2002-08-26 住友化学工業株式会社 ポジ型レジスト組成物
US5700620A (en) * 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
US5750632A (en) * 1994-12-30 1998-05-12 Clariant Finance (Bvi) Limited Isolation of novolak resin by low temperature sub surface forced steam distillation
TW442710B (en) * 1995-12-07 2001-06-23 Clariant Finance Bvi Ltd Isolation of novolak resin without high temperature distillation and photoresist composition therefrom

Also Published As

Publication number Publication date
US5863700A (en) 1999-01-26
JP2000501754A (ja) 2000-02-15
WO1997020873A1 (en) 1997-06-12
CN1137176C (zh) 2004-02-04
KR100414854B1 (ko) 2004-04-29
DE69621451T2 (de) 2002-11-28
CN1203607A (zh) 1998-12-30
TW442710B (en) 2001-06-23
EP0865455B1 (de) 2002-05-29
EP0865455A1 (de) 1998-09-23
KR19990071856A (ko) 1999-09-27
US6090533A (en) 2000-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU

8339 Ceased/non-payment of the annual fee