DE69620962D1 - Wellenlängenabstimmbare Laserlichtquelle unter Verwendung eines Verbundresonators mit Halbleiterlaser - Google Patents

Wellenlängenabstimmbare Laserlichtquelle unter Verwendung eines Verbundresonators mit Halbleiterlaser

Info

Publication number
DE69620962D1
DE69620962D1 DE69620962T DE69620962T DE69620962D1 DE 69620962 D1 DE69620962 D1 DE 69620962D1 DE 69620962 T DE69620962 T DE 69620962T DE 69620962 T DE69620962 T DE 69620962T DE 69620962 D1 DE69620962 D1 DE 69620962D1
Authority
DE
Germany
Prior art keywords
wavelength
light source
laser light
semiconductor laser
compound resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69620962T
Other languages
English (en)
Other versions
DE69620962T2 (de
Inventor
Shigeru Kinugawa
Shigenori Mattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anritsu Corp
Original Assignee
Anritsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anritsu Corp filed Critical Anritsu Corp
Application granted granted Critical
Publication of DE69620962D1 publication Critical patent/DE69620962D1/de
Publication of DE69620962T2 publication Critical patent/DE69620962T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
    • H01S3/0823—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/0826—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
DE69620962T 1995-08-25 1996-08-23 Wellenlängenabstimmbare Laserlichtquelle unter Verwendung eines Verbundresonators mit Halbleiterlaser Expired - Fee Related DE69620962T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24081995A JP3526671B2 (ja) 1995-08-25 1995-08-25 レーザ光源装置

Publications (2)

Publication Number Publication Date
DE69620962D1 true DE69620962D1 (de) 2002-06-06
DE69620962T2 DE69620962T2 (de) 2002-11-14

Family

ID=17065174

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69620962T Expired - Fee Related DE69620962T2 (de) 1995-08-25 1996-08-23 Wellenlängenabstimmbare Laserlichtquelle unter Verwendung eines Verbundresonators mit Halbleiterlaser

Country Status (4)

Country Link
US (1) US6141360A (de)
EP (1) EP0762573B1 (de)
JP (1) JP3526671B2 (de)
DE (1) DE69620962T2 (de)

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EP1231684A1 (de) * 2001-09-07 2002-08-14 Agilent Technologies, Inc. (a Delaware corporation) Laserabstimmung
US6658032B2 (en) 2001-10-05 2003-12-02 Pranalytica, Inc. Automated laser wavelength selection system and method
DE60200349T2 (de) 2002-08-03 2005-04-14 Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto Wellenlängenabstimmbarer Laser mit einem diffraktiven optischen Element
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US20040071181A1 (en) * 2002-10-15 2004-04-15 Rong Huang Retro-reflective etalon and the devices using the same
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US7065108B2 (en) * 2002-12-24 2006-06-20 Electronics And Telecommunications Research Institute Method of wavelength tuning in a semiconductor tunable laser
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US7197208B2 (en) * 2004-04-13 2007-03-27 Agilent Technologies Wavelength tunable light sources and methods of operating the same
EP1628374A1 (de) 2004-08-18 2006-02-22 Agilent Technologies, Inc. Laser mit externem Resonator mit mehreren stabilisierten Moden
US20060050747A1 (en) * 2004-09-08 2006-03-09 Trutna William R Jr Frequency-tunable light sources and methods of generating frequency-tunable light
US7177021B2 (en) * 2004-09-14 2007-02-13 Hewlett-Packard Development Company, L.P. Integrated radiation sources and amplifying structures, and methods of using the same
US7307719B2 (en) * 2004-09-14 2007-12-11 Hewlett-Packard Development Company, L.P. Wavelength-tunable excitation radiation amplifying structure and method
US7339666B2 (en) * 2004-09-14 2008-03-04 Hewlett-Packard Development Company, L.P. Light-amplifying structures and methods for surface-enhanced Raman spectroscopy
US7843976B2 (en) * 2005-01-24 2010-11-30 Thorlabs, Inc. Compact multimode laser with rapid wavelength scanning
JP2007019056A (ja) * 2005-07-05 2007-01-25 Japan Atomic Energy Agency 波長可変レーザー共振器及び波長掃引方法
US7511808B2 (en) * 2006-04-27 2009-03-31 Hewlett-Packard Development Company, L.P. Analyte stages including tunable resonant cavities and Raman signal-enhancing structures
KR100803222B1 (ko) * 2007-01-26 2008-02-14 삼성전자주식회사 스펙클 저감 레이저와 이를 채용한 레이저 디스플레이 장치
WO2009017398A1 (en) * 2007-08-02 2009-02-05 Technische Universiteit Eindhoven Semiconductor laser device
JP2011528191A (ja) * 2008-07-14 2011-11-10 ザ ジェネラル ホスピタル コーポレーション 波長掃引電磁放射を提供するための装置
US8416830B2 (en) * 2008-12-03 2013-04-09 Ipg Photonics Corporation Wavelength stabilized light emitter and system for protecting emitter from backreflected light
GB0904247D0 (en) * 2009-03-12 2009-04-22 Cip Technologies Ltd Hybrid integrated tuneable laser
US8687665B1 (en) * 2011-09-15 2014-04-01 Sandia Corporation Mutually injection locked lasers for enhanced frequency response
WO2013069106A1 (ja) * 2011-11-09 2013-05-16 キヤノン株式会社 光源装置及びこれを用いた撮像装置
WO2014096292A1 (en) * 2012-12-20 2014-06-26 Faz Technology Limited System and method to compensate for frequency distortions and polarization induced effects in optical systems
JP2015079830A (ja) * 2013-10-16 2015-04-23 三菱電機株式会社 光半導体装置、光半導体装置の製造方法、及び光モジュールの製造方法
US9577409B1 (en) * 2013-11-13 2017-02-21 Innovative Photonic Solutions, Inc. Wavelength stabilized diode laser
US9287681B2 (en) * 2013-11-13 2016-03-15 Innovative Photoic Solutions, Inc. Wavelength stabilized diode laser
JP5936771B2 (ja) * 2013-11-27 2016-06-22 日本碍子株式会社 外部共振器型発光装置
JP6676389B2 (ja) * 2016-01-29 2020-04-08 浜松ホトニクス株式会社 波長可変光源

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Also Published As

Publication number Publication date
JP3526671B2 (ja) 2004-05-17
EP0762573B1 (de) 2002-05-02
EP0762573A1 (de) 1997-03-12
DE69620962T2 (de) 2002-11-14
US6141360A (en) 2000-10-31
JPH0964439A (ja) 1997-03-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee