DE69023813D1 - Optisches System unter Verwendung eines Halbleiterlasers mit abstimmbarer Wellenlänge. - Google Patents

Optisches System unter Verwendung eines Halbleiterlasers mit abstimmbarer Wellenlänge.

Info

Publication number
DE69023813D1
DE69023813D1 DE69023813T DE69023813T DE69023813D1 DE 69023813 D1 DE69023813 D1 DE 69023813D1 DE 69023813 T DE69023813 T DE 69023813T DE 69023813 T DE69023813 T DE 69023813T DE 69023813 D1 DE69023813 D1 DE 69023813D1
Authority
DE
Germany
Prior art keywords
optical system
semiconductor laser
wavelength semiconductor
tunable wavelength
tunable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023813T
Other languages
English (en)
Other versions
DE69023813T2 (de
Inventor
John Edward Cunningham
Timothy Dean Harris
Erdmann Frederick Schubert
Der Ziel Jan Peter Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69023813D1 publication Critical patent/DE69023813D1/de
Application granted granted Critical
Publication of DE69023813T2 publication Critical patent/DE69023813T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Light Guides In General And Applications Therefor (AREA)
DE69023813T 1989-05-30 1990-05-23 Optisches System unter Verwendung eines Halbleiterlasers mit abstimmbarer Wellenlänge. Expired - Fee Related DE69023813T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/358,972 US4980892A (en) 1989-05-30 1989-05-30 Optical system including wavelength-tunable semiconductor laser

Publications (2)

Publication Number Publication Date
DE69023813D1 true DE69023813D1 (de) 1996-01-11
DE69023813T2 DE69023813T2 (de) 1996-04-18

Family

ID=23411784

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023813T Expired - Fee Related DE69023813T2 (de) 1989-05-30 1990-05-23 Optisches System unter Verwendung eines Halbleiterlasers mit abstimmbarer Wellenlänge.

Country Status (5)

Country Link
US (1) US4980892A (de)
EP (1) EP0400880B1 (de)
JP (1) JPH0695590B2 (de)
CA (1) CA2015482C (de)
DE (1) DE69023813T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5390209A (en) * 1994-01-05 1995-02-14 At&T Corp. Article comprising a semiconductor laser that is non-degenerate with regard to polarization
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
GB2380855B (en) * 2001-10-11 2005-12-14 Marconi Caswell Ltd Tunable laser with improved suppression of auger recombination
US20050064111A1 (en) * 2003-09-23 2005-03-24 Hiller Nathan David Method for forming doping superlattices using standing electromagnetic waves
US20050215036A1 (en) * 2004-03-26 2005-09-29 Hiller Nathan D Method for forming a doping superlattice using a laser
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
CN101573844B (zh) * 2007-12-28 2013-01-16 艾格瑞系统有限公司 具有delta掺杂活性区域的波导器件
US20090283746A1 (en) * 2008-05-15 2009-11-19 Palo Alto Research Center Incorporated Light-emitting devices with modulation doped active layers
EP2434594B1 (de) * 2010-09-27 2014-05-14 Alcatel Lucent Photonische integrierte Schaltung für Wellenlängenmultiplex-Verfahren
US11349569B2 (en) 2018-10-26 2022-05-31 Raytheon Company Methods and apparatus for implementing an optical transceiver using a vapor cell
US11307395B2 (en) 2019-05-23 2022-04-19 Raytheon Company Methods and apparatus for optical path length equalization in an optical cavity
EP3987687B1 (de) 2019-06-20 2023-07-05 Raytheon Company Verfahren und vorrichtung zur verfolgung bewegter objekte mittels symmetrischer phasenänderungsdetektion
EP3994808A1 (de) 2019-07-03 2022-05-11 Raytheon Company Optischer empfänger mit einem drehbaren optischen resonator und verfahren zur demodulation eines optischen signals unter verwendung dieses empfängers
US11199754B2 (en) 2019-07-15 2021-12-14 Raytheon Company Demodulator with optical resonator
US11431417B2 (en) * 2019-09-26 2022-08-30 Raytheon Company Methods and apparatus for reception of low photon density optical signals

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2664668B2 (ja) * 1986-06-17 1997-10-15 日本電信電話株式会社 半導体レーザ装置
JPS63231403A (ja) * 1987-03-11 1988-09-27 アメリカン　テレフォン　アンド　テレグラフ　カムパニー 光導波路を有する光学装置
US4839899A (en) * 1988-03-09 1989-06-13 Xerox Corporation Wavelength tuning of multiple quantum well (MQW) heterostructure lasers

Also Published As

Publication number Publication date
JPH0321094A (ja) 1991-01-29
EP0400880B1 (de) 1995-11-29
CA2015482C (en) 1994-03-29
CA2015482A1 (en) 1990-11-30
JPH0695590B2 (ja) 1994-11-24
DE69023813T2 (de) 1996-04-18
US4980892A (en) 1990-12-25
EP0400880A3 (de) 1991-09-18
EP0400880A2 (de) 1990-12-05

Similar Documents

Publication Publication Date Title
DE69023813D1 (de) Optisches System unter Verwendung eines Halbleiterlasers mit abstimmbarer Wellenlänge.
EP0465914A3 (en) Wavelength tunable laser diode
DK0627639T3 (da) Optisk fiber til bölgelængdemultiplexing
DE68910369D1 (de) Phasengekoppeltes Halbleiterlaser-Array unter Verwendung nahe beieinanderliegender Wellenleiter mit negativem Brechungsindex.
DE3769294D1 (de) Geraet zur dreidimensionalen anzeige unter verwendung eines lasers.
DE69509184D1 (de) Optisches Modul mit oberflächenemittierendem Laser mit senkrechtem Resonator
DE69013224D1 (de) Fiberoptisches Defektmeldesystem.
DE68914093D1 (de) Dotierte Glasfaser als Laser-Verstärker.
DE69109337D1 (de) Polarisationsteiler für Wellenleiterlicht.
DE69109806D1 (de) Laserdiodenmodul mit Glasfaserausgang.
DE69514042D1 (de) Wellenlängenabstimmbare Lichtquelle mit externem Resonator unter Verwendung eines Halbleiterlasers mit einer Region zur Einstellung der Phase
GB9017753D0 (en) Method for identifying output,main wavelength,etc.,of light
DE69102240D1 (de) Abstimmbarer Halbleiterlaser.
DE68924188D1 (de) Optischer Wellenlängenkonverter.
DE69225287D1 (de) Übertragungsvorrichtungsauswahl unter Verwendung von optischer Wellenlängenmultiplexeinrichtung
DE69030831D1 (de) Photodetektor mit wellenlängenselektivem optischem Koppler
DE68912122D1 (de) Lichtquelle mit stabilisierter wellenlänge.
DE68921172D1 (de) Optisch gepumpte Laser.
DE69009513D1 (de) Optische Fasereinheit.
DE3750483D1 (de) Optisches System für ein Halbleiterlaserbündel.
DE3772092D1 (de) Faseroptischer laserkreisel.
DE69114684D1 (de) Faserschlichtemittel.
NO895279D0 (no) Optisk fiber.
DE69000146D1 (de) Faseroptischer kreisel.
DE68908495D1 (de) Optischer strahlteiler.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee