DE69400656D1 - Integrierte Lichtquelle mit Multiquantumwell-Diodenlaser/Modulator - Google Patents

Integrierte Lichtquelle mit Multiquantumwell-Diodenlaser/Modulator

Info

Publication number
DE69400656D1
DE69400656D1 DE69400656T DE69400656T DE69400656D1 DE 69400656 D1 DE69400656 D1 DE 69400656D1 DE 69400656 T DE69400656 T DE 69400656T DE 69400656 T DE69400656 T DE 69400656T DE 69400656 D1 DE69400656 D1 DE 69400656D1
Authority
DE
Germany
Prior art keywords
modulator
light source
diode laser
integrated light
multiquantum well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69400656T
Other languages
English (en)
Other versions
DE69400656T2 (de
Inventor
Shinji Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Compound Semiconductor Devices Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69400656D1 publication Critical patent/DE69400656D1/de
Publication of DE69400656T2 publication Critical patent/DE69400656T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
DE69400656T 1993-03-03 1994-03-02 Integrierte Lichtquelle mit Multiquantumwell-Diodenlaser/Modulator Expired - Fee Related DE69400656T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5041642A JP2536714B2 (ja) 1993-03-03 1993-03-03 光変調器集積型多重量子井戸構造半導体レ―ザ素子

Publications (2)

Publication Number Publication Date
DE69400656D1 true DE69400656D1 (de) 1996-11-14
DE69400656T2 DE69400656T2 (de) 1997-05-07

Family

ID=12613992

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69400656T Expired - Fee Related DE69400656T2 (de) 1993-03-03 1994-03-02 Integrierte Lichtquelle mit Multiquantumwell-Diodenlaser/Modulator

Country Status (4)

Country Link
US (1) US5519721A (de)
EP (1) EP0614253B1 (de)
JP (1) JP2536714B2 (de)
DE (1) DE69400656T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3386261B2 (ja) * 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
GB2298735A (en) * 1995-03-08 1996-09-11 Sharp Kk Semiconductor device having a miniband
US5771257A (en) * 1996-12-26 1998-06-23 Mitsubishi Denki Kabushiki Kaisha Light absorption modulator and integrated semiconductor laser and modulator
US6061380A (en) * 1997-09-15 2000-05-09 Motorola, Inc. Vertical cavity surface emitting laser with doped active region and method of fabrication
JP2000147443A (ja) * 1998-11-11 2000-05-26 Nec Corp 半導体光変調器の作製方法
DE10227168A1 (de) * 2002-06-18 2004-01-15 Infineon Technologies Ag Vorrichtung zur optischen Signalübertragung, Verfahren zur optischen Signalübertragung und optischer Modulator
US7064881B2 (en) * 2003-05-30 2006-06-20 Sarnoff Corporation InP-based phase modulators and methods for making and using same
WO2005122349A1 (en) * 2004-06-07 2005-12-22 Nl Nanosemiconductor Gmbh Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer
US7907277B2 (en) * 2008-05-14 2011-03-15 Baker Hughes Incorporated Method and apparatus for downhole spectroscopy
US7902545B2 (en) * 2008-05-14 2011-03-08 Baker Hughes Incorporated Semiconductor for use in harsh environments
KR20150006444A (ko) 2012-04-16 2015-01-16 센서 일렉트로닉 테크놀로지, 인크 비-균일 다중 양자 우물 구조
CN114156732A (zh) * 2021-11-29 2022-03-08 青岛海信宽带多媒体技术有限公司 一种激光芯片及光模块

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751710A (en) * 1984-07-26 1988-06-14 Nec Corporation Semiconductor laser device
JP2749038B2 (ja) * 1987-07-31 1998-05-13 株式会社日立製作所 波長可変半導体レーザ
JP2941285B2 (ja) * 1988-05-16 1999-08-25 光技術研究開発株式会社 半導体レーザ装置
JP2746326B2 (ja) * 1989-01-10 1998-05-06 株式会社日立製作所 半導体光素子
US5020153A (en) * 1989-02-08 1991-05-28 At&T Bell Laboratories Tunable narrowband receiver utilizing distributed Bragg reflector laser structure
JP2950853B2 (ja) * 1989-07-10 1999-09-20 株式会社日立製作所 半導体光素子
US5132981A (en) * 1989-05-31 1992-07-21 Hitachi, Ltd. Semiconductor optical device
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
FR2667165B1 (fr) * 1990-09-21 1993-07-02 Thomson Csf Modulateur electrooptique multicouche de lumiere.
US5325382A (en) * 1990-09-28 1994-06-28 Nec Corporation Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser
JP2800425B2 (ja) * 1991-01-16 1998-09-21 日本電気株式会社 半導体レーザ
FR2681191A1 (fr) * 1991-09-06 1993-03-12 France Telecom Composant integre laser-modulateur a super-reseau tres couple.

Also Published As

Publication number Publication date
JP2536714B2 (ja) 1996-09-18
EP0614253A1 (de) 1994-09-07
JPH06314839A (ja) 1994-11-08
US5519721A (en) 1996-05-21
DE69400656T2 (de) 1997-05-07
EP0614253B1 (de) 1996-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI

8339 Ceased/non-payment of the annual fee