DE69617658D1 - Niedrig-temperatur-verfahren zur herstellung von geschichteten supergittermaterialen - Google Patents
Niedrig-temperatur-verfahren zur herstellung von geschichteten supergittermaterialenInfo
- Publication number
- DE69617658D1 DE69617658D1 DE69617658T DE69617658T DE69617658D1 DE 69617658 D1 DE69617658 D1 DE 69617658D1 DE 69617658 T DE69617658 T DE 69617658T DE 69617658 T DE69617658 T DE 69617658T DE 69617658 D1 DE69617658 D1 DE 69617658D1
- Authority
- DE
- Germany
- Prior art keywords
- low temperature
- temperature method
- producing layered
- grid materials
- super grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/407,760 US5508226A (en) | 1991-12-13 | 1995-03-21 | Low temperature process for fabricating layered superlattice materialsand making electronic devices including same |
PCT/US1996/003522 WO1996029727A1 (en) | 1995-03-21 | 1996-03-14 | Low temperature process for fabricating layered superlattice materials and making electronic devices including same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69617658D1 true DE69617658D1 (de) | 2002-01-17 |
DE69617658T2 DE69617658T2 (de) | 2002-05-08 |
Family
ID=23613415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69617658T Expired - Fee Related DE69617658T2 (de) | 1995-03-21 | 1996-03-14 | Niedrig-temperatur-verfahren zur herstellung von geschichteten supergittermaterialen |
Country Status (7)
Country | Link |
---|---|
US (1) | US5508226A (de) |
EP (1) | EP0815588B1 (de) |
JP (1) | JPH11502673A (de) |
KR (1) | KR19980703182A (de) |
CA (1) | CA2215052A1 (de) |
DE (1) | DE69617658T2 (de) |
WO (1) | WO1996029727A1 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6664115B2 (en) * | 1992-10-23 | 2003-12-16 | Symetrix Corporation | Metal insulator structure with polarization-compatible buffer layer |
US6204111B1 (en) * | 1994-12-28 | 2001-03-20 | Matsushita Electronics Corporation | Fabrication method of capacitor for integrated circuit |
KR100381498B1 (ko) * | 1995-05-22 | 2005-02-05 | 미쓰비시 마테리알 가부시키가이샤 | 비스무스계유전체박막및그의형성방법및그박막형성용조성물 |
US5817174A (en) * | 1995-12-15 | 1998-10-06 | Kabushiki Kaisha Toshiba | Semiconductor substrate and method of treating semiconductor substrate |
US5997642A (en) * | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
GB2338962B (en) * | 1996-06-19 | 2000-11-29 | Nec Corp | Thin film formation method |
KR100436054B1 (ko) * | 1996-12-30 | 2004-12-04 | 주식회사 하이닉스반도체 | 강유전체캐패시터제조방법 |
US6104049A (en) * | 1997-03-03 | 2000-08-15 | Symetrix Corporation | Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same |
US6174463B1 (en) * | 1997-03-27 | 2001-01-16 | Sony Corporation | Layer crystal structure oxide, production method thereof and memory element using the same |
DE69800954T2 (de) * | 1997-05-06 | 2001-11-22 | Virginia Tech Intell Prop | Verfahren zur Herstellung von festen Lösungen von schichtförmigen Perovskit-Materialien |
US5962069A (en) * | 1997-07-25 | 1999-10-05 | Symetrix Corporation | Process for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperatures |
DE19743269A1 (de) * | 1997-09-30 | 1999-04-01 | Siemens Ag | Herstellverfahren für eine Bi-haltige keramische Schicht |
US6207465B1 (en) | 1998-04-17 | 2001-03-27 | Symetrix Corporation | Method of fabricating ferroelectric integrated circuit using dry and wet etching |
US6225156B1 (en) | 1998-04-17 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same |
US6130103A (en) * | 1998-04-17 | 2000-10-10 | Symetrix Corporation | Method for fabricating ferroelectric integrated circuits |
US6165802A (en) * | 1998-04-17 | 2000-12-26 | Symetrix Corporation | Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation |
KR100399886B1 (ko) * | 1998-07-02 | 2004-02-11 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 커패시터 형성 방법 |
US6133092A (en) * | 1998-07-24 | 2000-10-17 | Symetrix Corporation | Low temperature process for fabricating layered superlattice materials and making electronic devices including same |
US6586790B2 (en) | 1998-07-24 | 2003-07-01 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
US6225656B1 (en) | 1998-12-01 | 2001-05-01 | Symetrix Corporation | Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same |
US6245580B1 (en) | 1999-01-11 | 2001-06-12 | Symetrix Corporation | Low temperature process for fabricating layered superlattice materials and making electronic devices including same |
US6255121B1 (en) | 1999-02-26 | 2001-07-03 | Symetrix Corporation | Method for fabricating ferroelectric field effect transistor having an interface insulator layer formed by a liquid precursor |
US6236076B1 (en) | 1999-04-29 | 2001-05-22 | Symetrix Corporation | Ferroelectric field effect transistors for nonvolatile memory applications having functional gradient material |
US6372518B1 (en) * | 2000-01-26 | 2002-04-16 | Matsushita Electric Industrial Co., Ltd. | Method using unreactive gas anneal and low temperature pretreatment for fabricating layered superlattice materials and making electronic devices including same |
US6326315B1 (en) | 2000-03-09 | 2001-12-04 | Symetrix Corporation | Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same |
US6582972B1 (en) | 2000-04-07 | 2003-06-24 | Symetrix Corporation | Low temperature oxidizing method of making a layered superlattice material |
DE10041699A1 (de) * | 2000-08-24 | 2002-03-21 | Infineon Technologies Ag | Niedertemperatur-Prozessierung ferroelektrischer Strontium-Wismuth-Tantalat-Schichten und Herstellung ferroelektrischer Bauelemente daraus |
US6607980B2 (en) | 2001-02-12 | 2003-08-19 | Symetrix Corporation | Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same |
US7008669B2 (en) * | 2001-06-13 | 2006-03-07 | Seiko Epson Corporation | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element |
US6815223B2 (en) | 2002-11-22 | 2004-11-09 | Symetrix Corporation | Low thermal budget fabrication of ferroelectric memory using RTP |
US6743643B2 (en) | 2001-11-29 | 2004-06-01 | Symetrix Corporation | Stacked memory cell having diffusion barriers |
US7223665B2 (en) * | 2003-09-04 | 2007-05-29 | Murata Manufacturing Co., Ltd. | Method for manufacturing dielectric thin film capacitor |
JP3924286B2 (ja) * | 2003-10-31 | 2007-06-06 | Tdk株式会社 | 積層セラミック電子部品の製造方法 |
DE102004002204A1 (de) * | 2004-01-15 | 2005-08-11 | Epcos Ag | Keramikmaterial |
US20060169592A1 (en) * | 2005-01-31 | 2006-08-03 | Hewlett-Packard Development Company, L.P. | Periodic layered structures and methods therefor |
JP2018011028A (ja) * | 2016-07-15 | 2018-01-18 | 株式会社村田製作所 | 誘電体薄膜および薄膜キャパシタの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5046043A (en) * | 1987-10-08 | 1991-09-03 | National Semiconductor Corporation | Ferroelectric capacitor and memory cell including barrier and isolation layers |
US5423285A (en) * | 1991-02-25 | 1995-06-13 | Olympus Optical Co., Ltd. | Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications |
US5434102A (en) * | 1991-02-25 | 1995-07-18 | Symetrix Corporation | Process for fabricating layered superlattice materials and making electronic devices including same |
WO1993012542A1 (en) * | 1991-12-13 | 1993-06-24 | Symetrix Corporation | Layered superlattice material applications |
WO1994010704A1 (en) * | 1992-10-23 | 1994-05-11 | Symetrix Corporation | Integrated circuit with layered superlattice material and method of fabricating same |
-
1995
- 1995-03-21 US US08/407,760 patent/US5508226A/en not_active Expired - Lifetime
-
1996
- 1996-03-14 JP JP8528507A patent/JPH11502673A/ja not_active Ceased
- 1996-03-14 KR KR1019970706585A patent/KR19980703182A/ko active IP Right Grant
- 1996-03-14 CA CA002215052A patent/CA2215052A1/en not_active Abandoned
- 1996-03-14 EP EP96911312A patent/EP0815588B1/de not_active Expired - Lifetime
- 1996-03-14 WO PCT/US1996/003522 patent/WO1996029727A1/en active IP Right Grant
- 1996-03-14 DE DE69617658T patent/DE69617658T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0815588B1 (de) | 2001-12-05 |
EP0815588A1 (de) | 1998-01-07 |
JPH11502673A (ja) | 1999-03-02 |
CA2215052A1 (en) | 1996-09-26 |
DE69617658T2 (de) | 2002-05-08 |
US5508226A (en) | 1996-04-16 |
WO1996029727A1 (en) | 1996-09-26 |
KR19980703182A (ko) | 1998-10-15 |
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