DE69617341T2 - Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen Vorrichtung - Google Patents

Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen Vorrichtung

Info

Publication number
DE69617341T2
DE69617341T2 DE69617341T DE69617341T DE69617341T2 DE 69617341 T2 DE69617341 T2 DE 69617341T2 DE 69617341 T DE69617341 T DE 69617341T DE 69617341 T DE69617341 T DE 69617341T DE 69617341 T2 DE69617341 T2 DE 69617341T2
Authority
DE
Germany
Prior art keywords
active layer
semiconductor
layer
fuse
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69617341T
Other languages
German (de)
English (en)
Other versions
DE69617341D1 (de
Inventor
Jean-Francois Allier
Jean Caillaba
Jean-Michel Reynes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Semiconducteurs SA filed Critical Motorola Semiconducteurs SA
Publication of DE69617341D1 publication Critical patent/DE69617341D1/de
Application granted granted Critical
Publication of DE69617341T2 publication Critical patent/DE69617341T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F42—AMMUNITION; BLASTING
    • F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
    • F42B3/00—Blasting cartridges, i.e. case and explosive
    • F42B3/10—Initiators therefor
    • F42B3/12—Bridge initiators
    • F42B3/13—Bridge initiators with semiconductive bridge

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
DE69617341T 1995-09-05 1996-08-09 Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen Vorrichtung Expired - Fee Related DE69617341T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9510374A FR2738334A1 (fr) 1995-09-05 1995-09-05 Dispositif allumeur a semiconducteur, pour declenchement pyrotechnique, et procede de formation d'un tel dispositif

Publications (2)

Publication Number Publication Date
DE69617341D1 DE69617341D1 (de) 2002-01-10
DE69617341T2 true DE69617341T2 (de) 2002-07-25

Family

ID=9482270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69617341T Expired - Fee Related DE69617341T2 (de) 1995-09-05 1996-08-09 Halbleiterzündungsvorrichtung und Verfahren zum Bilden einer solchen Vorrichtung

Country Status (6)

Country Link
US (1) US5798475A (https=)
EP (1) EP0762073B1 (https=)
JP (1) JPH09115416A (https=)
KR (1) KR970018419A (https=)
DE (1) DE69617341T2 (https=)
FR (1) FR2738334A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222710A (ja) * 1995-02-17 1996-08-30 Mitsubishi Electric Corp 半導体装置
US5847309A (en) * 1995-08-24 1998-12-08 Auburn University Radio frequency and electrostatic discharge insensitive electro-explosive devices having non-linear resistances
US5992326A (en) * 1997-01-06 1999-11-30 The Ensign-Bickford Company Voltage-protected semiconductor bridge igniter elements
US6199484B1 (en) * 1997-01-06 2001-03-13 The Ensign-Bickford Company Voltage-protected semiconductor bridge igniter elements
DE59805957D1 (de) * 1997-05-26 2002-11-21 Conti Temic Microelectronic Dünnschichtanzündelement für pyrotechnische wirkmassen und verfahren zu dessen herstellung
DE19756603C1 (de) * 1997-12-18 1999-06-24 Siemens Ag Integrierte Schaltungsanordnung mit einem Kondensator und einem Zündelement sowie Verwendung einer solchen Schaltungsanordnung
DE19806915A1 (de) * 1998-02-19 1999-09-02 Bosch Gmbh Robert Zündvorrichtung für einen Gasgenerator einer Rückhalteeinrichtung
DE19815928C2 (de) 1998-04-09 2000-05-11 Daimler Chrysler Ag Halbleiterzünder mit verbesserter konstruktiver Festigkeit
FR2784176B1 (fr) 1998-10-06 2004-11-26 Livbag Snc Systeme d'initiation electro-pyrotechnique protege contre les decharges electrostatiques
DE10006528C2 (de) * 2000-02-15 2001-12-06 Infineon Technologies Ag Fuseanordnung für eine Halbleitervorrichtung
US6772692B2 (en) * 2000-05-24 2004-08-10 Lifesparc, Inc. Electro-explosive device with laminate bridge
US7328657B2 (en) * 2001-08-28 2008-02-12 Scb Technologies, Inc. Tubular igniter bridge
US6774457B2 (en) * 2001-09-13 2004-08-10 Texas Instruments Incorporated Rectangular contact used as a low voltage fuse element
EP1544570B1 (en) * 2003-12-17 2007-10-17 HONDA MOTOR CO., Ltd. Squib
KR100534102B1 (ko) * 2004-04-21 2005-12-06 삼성전자주식회사 반도체 기억소자의 퓨즈 영역들 및 그 제조방법들
MY151153A (en) * 2007-03-12 2014-04-30 Dyno Nobel Inc Detonator ignition protection circuit
CN205726580U (zh) * 2013-10-24 2016-11-23 株式会社村田制作所 复合保护电路、复合保护元件以及照明用led元件
WO2023095535A1 (ja) * 2021-11-26 2023-06-01 株式会社オートネットワーク技術研究所 遮断装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2747163A1 (de) * 1977-10-20 1979-04-26 Dynamit Nobel Ag Elektrisches anzuendelement
US4708060A (en) * 1985-02-19 1987-11-24 The United States Of America As Represented By The United States Department Of Energy Semiconductor bridge (SCB) igniter
GB2190730B (en) * 1986-05-22 1990-10-24 Detonix Close Corp Detonator firing element
US4855804A (en) * 1987-11-17 1989-08-08 Motorola, Inc. Multilayer trench isolation process and structure
US4843964A (en) * 1988-02-01 1989-07-04 The United States Of America As Represented By The United States Department Of Energy Smart explosive igniter
US4937094A (en) * 1988-05-26 1990-06-26 Energy Conversion Devices, Inc. Method of creating a high flux of activated species for reaction with a remotely located substrate
US4976200A (en) * 1988-12-30 1990-12-11 The United States Of America As Represented By The United States Department Of Energy Tungsten bridge for the low energy ignition of explosive and energetic materials
US4967665A (en) * 1989-07-24 1990-11-06 The United States Of America As Represented By The Secretary Of The Navy RF and DC desensitized electroexplosive device
US5094167A (en) * 1990-03-14 1992-03-10 Schlumberger Technology Corporation Shape charge for a perforating gun including an integrated circuit detonator and wire contactor responsive to ordinary current for detonation
US5088329A (en) * 1990-05-07 1992-02-18 Sahagen Armen N Piezoresistive pressure transducer
US5085146A (en) * 1990-05-17 1992-02-04 Auburn University Electroexplosive device
US5309841A (en) * 1991-10-08 1994-05-10 Scb Technologies, Inc. Zener diode for protection of integrated circuit explosive bridge
US5371378A (en) * 1992-06-08 1994-12-06 Kobe Steel Usa, Inc. Diamond metal base/permeable base transistor and method of making same
US5372673A (en) * 1993-01-25 1994-12-13 Motorola, Inc. Method for processing a layer of material while using insitu monitoring and control
GB2301939B (en) * 1994-03-25 1998-10-21 Amoco Enron Solar Increasing Stabilized Performance of Amorphous Silicon Based Devices Produced by Highly Hydrogen Diluted Lower Temperature Plasma Deposition

Also Published As

Publication number Publication date
DE69617341D1 (de) 2002-01-10
FR2738334A1 (fr) 1997-03-07
EP0762073B1 (en) 2001-11-28
KR970018419A (ko) 1997-04-30
EP0762073A1 (en) 1997-03-12
JPH09115416A (ja) 1997-05-02
US5798475A (en) 1998-08-25

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee