DE69615916D1 - Spannungsbegrenzter Leistungs-Anreicherungs-MOSFET - Google Patents

Spannungsbegrenzter Leistungs-Anreicherungs-MOSFET

Info

Publication number
DE69615916D1
DE69615916D1 DE69615916T DE69615916T DE69615916D1 DE 69615916 D1 DE69615916 D1 DE 69615916D1 DE 69615916 T DE69615916 T DE 69615916T DE 69615916 T DE69615916 T DE 69615916T DE 69615916 D1 DE69615916 D1 DE 69615916D1
Authority
DE
Germany
Prior art keywords
limited power
power enhancement
voltage limited
enhancement mosfet
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615916T
Other languages
English (en)
Other versions
DE69615916T2 (de
Inventor
Richard K Williams
Shekar S Mallikarjunaswamy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE69615916D1 publication Critical patent/DE69615916D1/de
Application granted granted Critical
Publication of DE69615916T2 publication Critical patent/DE69615916T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
DE69615916T 1995-06-02 1996-05-31 Spannungsbegrenzter Leistungs-Anreicherungs-MOSFET Expired - Lifetime DE69615916T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/459,054 US5856692A (en) 1995-06-02 1995-06-02 Voltage-clamped power accumulation-mode MOSFET

Publications (2)

Publication Number Publication Date
DE69615916D1 true DE69615916D1 (de) 2001-11-22
DE69615916T2 DE69615916T2 (de) 2002-06-13

Family

ID=23823222

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615916T Expired - Lifetime DE69615916T2 (de) 1995-06-02 1996-05-31 Spannungsbegrenzter Leistungs-Anreicherungs-MOSFET

Country Status (4)

Country Link
US (1) US5856692A (de)
EP (1) EP0746029B9 (de)
JP (1) JP2987327B2 (de)
DE (1) DE69615916T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
DE19738324C1 (de) * 1997-09-02 1998-09-03 Siemens Ag DMOS mit großer Kanalweite und hoher Avalanche-Festigkeit
US6380569B1 (en) * 1999-08-10 2002-04-30 Rockwell Science Center, Llc High power unipolar FET switch
US7368777B2 (en) * 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
DE102004053761A1 (de) * 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
US20090250750A1 (en) * 2005-09-21 2009-10-08 Shindengen Electric Manufacturing Co., Ltd. Trench gate power mosfet
US8154073B2 (en) * 2006-07-14 2012-04-10 Denso Corporation Semiconductor device
US8878292B2 (en) * 2008-03-02 2014-11-04 Alpha And Omega Semiconductor Incorporated Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method
JP5530602B2 (ja) * 2008-04-09 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8049276B2 (en) * 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US8432000B2 (en) 2010-06-18 2013-04-30 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP5920970B2 (ja) 2011-11-30 2016-05-24 ローム株式会社 半導体装置
DE102018106670B4 (de) * 2018-03-21 2025-02-06 Infineon Technologies Ag Siliziumcarbid-Halbleitervorrichtung mit Graben-Gatestruktur und einem Sourcegebiet in einem oberen Bereich eines Mesaabschnitts
DE102019216138A1 (de) * 2019-10-21 2021-04-22 Robert Bosch Gmbh Vertikaler feldeffekttransistor und verfahren zum ausbilden desselben
CN120730784B (zh) * 2025-08-25 2025-11-18 浙江大学 一种SiC MOSFET器件及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612828B2 (ja) * 1983-06-30 1994-02-16 株式会社東芝 半導体装置
JPH01215067A (ja) * 1988-02-24 1989-08-29 Hitachi Ltd 縦型絶縁ゲート電解効果トランジスタ
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
GB9215653D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
JPH06302808A (ja) * 1993-04-12 1994-10-28 Toyota Autom Loom Works Ltd 半導体装置
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current

Also Published As

Publication number Publication date
JPH09102605A (ja) 1997-04-15
JP2987327B2 (ja) 1999-12-06
EP0746029B1 (de) 2001-10-17
EP0746029A3 (de) 1997-01-08
EP0746029A2 (de) 1996-12-04
EP0746029B9 (de) 2002-08-07
DE69615916T2 (de) 2002-06-13
US5856692A (en) 1999-01-05

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Legal Events

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8364 No opposition during term of opposition