DE69610789D1 - Vorrichtung zur Erzeugung der zweiten Harmonischen und Verfahren zu ihrer Herstellung - Google Patents
Vorrichtung zur Erzeugung der zweiten Harmonischen und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69610789D1 DE69610789D1 DE69610789T DE69610789T DE69610789D1 DE 69610789 D1 DE69610789 D1 DE 69610789D1 DE 69610789 T DE69610789 T DE 69610789T DE 69610789 T DE69610789 T DE 69610789T DE 69610789 D1 DE69610789 D1 DE 69610789D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- same
- generating device
- harmonic generating
- harmonic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8393895 | 1995-04-10 | ||
JP8029207A JPH08339002A (ja) | 1995-04-10 | 1996-02-16 | 第二高調波発生素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69610789D1 true DE69610789D1 (de) | 2000-12-07 |
DE69610789T2 DE69610789T2 (de) | 2001-05-10 |
Family
ID=26367372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69610789T Expired - Fee Related DE69610789T2 (de) | 1995-04-10 | 1996-04-10 | Vorrichtung zur Erzeugung der zweiten Harmonischen und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5737117A (de) |
EP (1) | EP0737884B1 (de) |
JP (1) | JPH08339002A (de) |
DE (1) | DE69610789T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11326966A (ja) * | 1998-05-12 | 1999-11-26 | Ngk Insulators Ltd | 第二高調波発生装置 |
JPH11326967A (ja) * | 1998-05-12 | 1999-11-26 | Ngk Insulators Ltd | 第二高調波発生素子 |
JPH11335199A (ja) | 1998-05-27 | 1999-12-07 | Ngk Insulators Ltd | 単結晶膜の製造方法 |
EP0961160B1 (de) * | 1998-05-27 | 2005-03-30 | Ngk Insulators, Ltd. | Vorrichtung zur Erzeugung der zweiten harmonischen Welle |
JP2000131546A (ja) | 1998-10-26 | 2000-05-12 | Pioneer Electronic Corp | リッジ形3次元導波路製造方法 |
JP4334773B2 (ja) * | 2000-03-09 | 2009-09-30 | 日本碍子株式会社 | 酸化物単結晶の板状体の製造方法 |
JP2001253792A (ja) * | 2000-03-09 | 2001-09-18 | Ngk Insulators Ltd | 酸化物単結晶の板状体の製造方法 |
US6362234B1 (en) * | 2000-08-15 | 2002-03-26 | Vyrex Corporation | Water-soluble prodrugs of propofol for treatment of migrane |
US6792189B2 (en) * | 2001-05-13 | 2004-09-14 | Nippon Telegraph And Telephone Corporation | Optical waveguide and method of manufacture |
JP2004295088A (ja) | 2003-03-11 | 2004-10-21 | Ngk Insulators Ltd | 波長変換素子 |
US7807581B2 (en) * | 2007-03-07 | 2010-10-05 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
US7589886B1 (en) | 2008-08-12 | 2009-09-15 | Hc Photonics Corp. | Wavelength converter structure and method for preparing the same |
US9995875B2 (en) | 2015-07-28 | 2018-06-12 | The Penn State Research Foundation | Method and apparatus for producing crystalline cladding and crystalline core optical fibers |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740265A (en) * | 1987-01-08 | 1988-04-26 | E. I. Du Pont De Nemours And Company | Process for producing an optical waveguide and the product therefrom |
NL8901875A (nl) * | 1989-07-20 | 1991-02-18 | Philips Nv | Kalium-lithium niobaat kristallen. |
JPH085738B2 (ja) * | 1991-03-08 | 1996-01-24 | 工業技術院長 | 細径の非線形光学単結晶ファイバーの育成方法 |
DE69207695T2 (de) * | 1991-10-01 | 1996-07-25 | Philips Electronics Nv | Verfahren zur Herstellung von Kalium-Lithium-Niobatkristallen |
JPH05173213A (ja) * | 1991-12-25 | 1993-07-13 | Hitachi Ltd | 導波路型第二高調波発生素子 |
JPH05289131A (ja) * | 1992-04-07 | 1993-11-05 | Ibiden Co Ltd | 部分分極反転構造を有する導波路型shg素子とその製造方法 |
JPH06345588A (ja) * | 1993-05-31 | 1994-12-20 | Agency Of Ind Science & Technol | 結晶育成方法 |
ES2069496B1 (es) * | 1993-08-10 | 1995-11-01 | Asturiana De Zinc Sa | Cuba para instalaciones de electrolisis. |
JP3259869B2 (ja) * | 1993-08-24 | 2002-02-25 | ペルメレック電極株式会社 | 電解用電極基体及びその製造方法 |
JP3462265B2 (ja) * | 1994-06-21 | 2003-11-05 | パイオニア株式会社 | 波長変換素子 |
JPH0987085A (ja) * | 1995-09-22 | 1997-03-31 | Ngk Insulators Ltd | 光学単結晶品および光学素子 |
-
1996
- 1996-02-16 JP JP8029207A patent/JPH08339002A/ja active Pending
- 1996-04-05 US US08/628,252 patent/US5737117A/en not_active Expired - Fee Related
- 1996-04-10 EP EP96302530A patent/EP0737884B1/de not_active Expired - Lifetime
- 1996-04-10 DE DE69610789T patent/DE69610789T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0737884A2 (de) | 1996-10-16 |
EP0737884A3 (de) | 1997-09-24 |
US5737117A (en) | 1998-04-07 |
DE69610789T2 (de) | 2001-05-10 |
EP0737884B1 (de) | 2000-11-02 |
JPH08339002A (ja) | 1996-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |