DE69610572T2 - Zusammensetzung für reflexionsvermindernde Resistbeschichtung - Google Patents

Zusammensetzung für reflexionsvermindernde Resistbeschichtung

Info

Publication number
DE69610572T2
DE69610572T2 DE69610572T DE69610572T DE69610572T2 DE 69610572 T2 DE69610572 T2 DE 69610572T2 DE 69610572 T DE69610572 T DE 69610572T DE 69610572 T DE69610572 T DE 69610572T DE 69610572 T2 DE69610572 T2 DE 69610572T2
Authority
DE
Germany
Prior art keywords
composition
resist coating
reflective resist
reflective
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610572T
Other languages
English (en)
Other versions
DE69610572D1 (de
Inventor
Mineo Nishi
Tadashi Teramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Mitsubishi Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp
Application granted granted Critical
Publication of DE69610572D1 publication Critical patent/DE69610572D1/de
Publication of DE69610572T2 publication Critical patent/DE69610572T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/10—Homopolymers or copolymers of unsaturated ethers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Materials For Photolithography (AREA)
DE69610572T 1995-03-23 1996-03-20 Zusammensetzung für reflexionsvermindernde Resistbeschichtung Expired - Fee Related DE69610572T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6413295 1995-03-23

Publications (2)

Publication Number Publication Date
DE69610572D1 DE69610572D1 (de) 2000-11-16
DE69610572T2 true DE69610572T2 (de) 2001-05-31

Family

ID=13249253

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610572T Expired - Fee Related DE69610572T2 (de) 1995-03-23 1996-03-20 Zusammensetzung für reflexionsvermindernde Resistbeschichtung

Country Status (4)

Country Link
US (1) US5611850A (de)
EP (1) EP0736809B1 (de)
KR (1) KR100404951B1 (de)
DE (1) DE69610572T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3694703B2 (ja) * 1996-04-25 2005-09-14 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物
JP2001142221A (ja) * 1999-11-10 2001-05-25 Clariant (Japan) Kk 反射防止コーティング用組成物
KR100400331B1 (ko) * 1999-12-02 2003-10-01 주식회사 하이닉스반도체 포토레지스트 오버코팅용 조성물 및 이를 이용한포토레지스트 패턴 형성방법
JP3320402B2 (ja) * 2000-06-26 2002-09-03 クラリアント ジャパン 株式会社 現像欠陥防止プロセス及び材料
DE10045793C2 (de) * 2000-09-15 2002-07-18 Zeiss Carl Verfahren zum Strukturieren eines Substrats
JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
JP3707780B2 (ja) * 2002-06-24 2005-10-19 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP3851594B2 (ja) * 2002-07-04 2006-11-29 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物およびパターン形成方法
KR20050096161A (ko) 2003-01-29 2005-10-05 아사히 가라스 가부시키가이샤 코팅 조성물, 반사 방지막, 포토레지스트 및 그것을 사용한패턴 형성 방법
TWI362566B (en) 2004-06-30 2012-04-21 Dainippon Ink & Chemicals Composition for antireflection coating and pattern forming method
DE602005027888D1 (de) * 2004-12-03 2011-06-16 Jsr Corp Zusammensetzung zur bildung eines antireflexionsfilms, beschichtetes produkt und verfahren zur herstellung einer resiststruktur
JP2006301524A (ja) * 2005-04-25 2006-11-02 Tokyo Ohka Kogyo Co Ltd 保護膜形成用材料およびこれを用いたレジストパターン形成方法
US7989568B2 (en) 2008-11-13 2011-08-02 E.I. Du Pont De Nemours And Company Fluorosulfonates
US20230056958A1 (en) * 2021-08-06 2023-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist developer and methods of use

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213057A (ja) * 1982-06-04 1983-12-10 Dainippon Ink & Chem Inc 被覆用組成物
US4514537A (en) * 1984-02-09 1985-04-30 E. I. Du Pont De Nemours And Company Tetrafluoroethylene polymer dispersions
JP2643056B2 (ja) * 1991-06-28 1997-08-20 インターナショナル・ビジネス・マシーンズ・コーポレイション 表面反射防止コーティング形成組成物及びその使用
US5514526A (en) * 1992-06-02 1996-05-07 Mitsubishi Chemical Corporation Fluorine-containing composition for forming anti-reflection film on resist surface and pattern formation method
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features

Also Published As

Publication number Publication date
EP0736809A1 (de) 1996-10-09
KR100404951B1 (ko) 2005-02-02
KR960034346A (ko) 1996-10-22
US5611850A (en) 1997-03-18
EP0736809B1 (de) 2000-10-11
DE69610572D1 (de) 2000-11-16

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SHIPLEY CO., L.L.C., MARLBOROUGH, MASS., US

8339 Ceased/non-payment of the annual fee