DE69514171T2 - Reflexvermindernde Schicht für die Mikrolithographie - Google Patents

Reflexvermindernde Schicht für die Mikrolithographie

Info

Publication number
DE69514171T2
DE69514171T2 DE69514171T DE69514171T DE69514171T2 DE 69514171 T2 DE69514171 T2 DE 69514171T2 DE 69514171 T DE69514171 T DE 69514171T DE 69514171 T DE69514171 T DE 69514171T DE 69514171 T2 DE69514171 T2 DE 69514171T2
Authority
DE
Germany
Prior art keywords
microlithography
reflective layer
reflective
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69514171T
Other languages
English (en)
Other versions
DE69514171D1 (de
Inventor
James Thomas Fahey
Brian Wayne Herbst
Leo Lawrence Linehan
Wayne Martin Moreau
Gary Thomas Spinillo
Kevin Michael Welsh
Robert Lavin Wood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69514171D1 publication Critical patent/DE69514171D1/de
Publication of DE69514171T2 publication Critical patent/DE69514171T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • C08G65/4012Other compound (II) containing a ketone group, e.g. X-Ar-C(=O)-Ar-X for polyetherketones
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D171/00Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2650/00Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G2650/62Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the nature of monomer used
    • C08G2650/64Monomer containing functional groups not involved in polymerisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polyethers (AREA)
DE69514171T 1994-07-27 1995-07-13 Reflexvermindernde Schicht für die Mikrolithographie Expired - Fee Related DE69514171T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/281,398 US5607824A (en) 1994-07-27 1994-07-27 Antireflective coating for microlithography

Publications (2)

Publication Number Publication Date
DE69514171D1 DE69514171D1 (de) 2000-02-03
DE69514171T2 true DE69514171T2 (de) 2000-06-21

Family

ID=23077127

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514171T Expired - Fee Related DE69514171T2 (de) 1994-07-27 1995-07-13 Reflexvermindernde Schicht für die Mikrolithographie

Country Status (5)

Country Link
US (3) US5607824A (de)
EP (1) EP0698823B1 (de)
JP (1) JP3110983B2 (de)
DE (1) DE69514171T2 (de)
TW (1) TW379247B (de)

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JP2953562B2 (ja) * 1994-07-18 1999-09-27 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いた多層レジスト材料
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US6136498A (en) * 1996-06-28 2000-10-24 International Business Machines Corporation Polymer-bound sensitizer
US5939206A (en) * 1996-08-29 1999-08-17 Xerox Corporation Stabilized porous, electrically conductive substrates
US6007877A (en) 1996-08-29 1999-12-28 Xerox Corporation Aqueous developable high performance photosensitive curable aromatic ether polymers
US5863963A (en) * 1996-08-29 1999-01-26 Xerox Corporation Halomethylated high performance curable polymers
US5739254A (en) * 1996-08-29 1998-04-14 Xerox Corporation Process for haloalkylation of high performance polymers
US5945253A (en) * 1996-08-29 1999-08-31 Xerox Corporation High performance curable polymers and processes for the preparation thereof
US5889077A (en) * 1996-08-29 1999-03-30 Xerox Corporation Process for direct substitution of high performance polymers with unsaturated ester groups
US6124372A (en) * 1996-08-29 2000-09-26 Xerox Corporation High performance polymer compositions having photosensitivity-imparting substituents and thermal sensitivity-imparting substituents
US5958995A (en) * 1996-08-29 1999-09-28 Xerox Corporation Blends containing photosensitive high performance aromatic ether curable polymers
US5761809A (en) * 1996-08-29 1998-06-09 Xerox Corporation Process for substituting haloalkylated polymers with unsaturated ester, ether, and alkylcarboxymethylene groups
US5849809A (en) 1996-08-29 1998-12-15 Xerox Corporation Hydroxyalkylated high performance curable polymers
US5994425A (en) * 1996-08-29 1999-11-30 Xerox Corporation Curable compositions containing photosensitive high performance aromatic ether polymers
US7147983B1 (en) * 1996-10-07 2006-12-12 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
DE69707635T2 (de) * 1996-12-24 2002-08-08 Fuji Photo Film Co Ltd Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit
JP3851402B2 (ja) * 1997-02-28 2006-11-29 富士写真フイルム株式会社 反射防止膜材料組成物及びそれを利用したレジストパターン形成方法
US6077643A (en) * 1997-08-28 2000-06-20 Shipley Company, L.L.C. Polymers and photoresist compositions
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6057083A (en) 1997-11-04 2000-05-02 Shipley Company, L.L.C. Polymers and photoresist compositions
US6165674A (en) * 1998-01-15 2000-12-26 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
US6190839B1 (en) 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
CN1300383A (zh) 1998-04-29 2001-06-20 部鲁尔科学公司 得自纤维素粘合剂的快速蚀刻、热固性抗反射涂料
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US6410209B1 (en) 1998-09-15 2002-06-25 Shipley Company, L.L.C. Methods utilizing antireflective coating compositions with exposure under 200 nm
US6139920A (en) * 1998-12-21 2000-10-31 Xerox Corporation Photoresist compositions
US6316165B1 (en) 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6124074A (en) * 1999-03-11 2000-09-26 International Business Machines Corporation Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives
US6177238B1 (en) 1999-06-04 2001-01-23 Xerox Corporation Ink jet printheads containing arylene ether alcohol polymers and processes for their formation
US6117967A (en) * 1999-06-04 2000-09-12 Xerox Corporation Arylene ether alcohol polymers
US6174636B1 (en) 1999-06-04 2001-01-16 Xerox Corporation Imaging members containing arylene ether alcohol polymers
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6107177A (en) * 1999-08-25 2000-08-22 Siemens Aktienesellschaft Silylation method for reducing critical dimension loss and resist loss
US6936405B2 (en) * 2000-02-22 2005-08-30 Brewer Science Inc. Organic polymeric antireflective coatings deposited by chemical vapor deposition
US6686124B1 (en) * 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
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US7326509B2 (en) * 2001-08-20 2008-02-05 Nissan Chemical Industries, Ltd. Composition for forming anti-reflective coating for use in lithography
US6642147B2 (en) 2001-08-23 2003-11-04 International Business Machines Corporation Method of making thermally stable planarizing films
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US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
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JP5517848B2 (ja) * 2010-09-08 2014-06-11 キヤノン株式会社 液体吐出ヘッドの製造方法
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Also Published As

Publication number Publication date
US5736301A (en) 1998-04-07
EP0698823A1 (de) 1996-02-28
US6207787B1 (en) 2001-03-27
EP0698823B1 (de) 1999-12-29
DE69514171D1 (de) 2000-02-03
TW379247B (en) 2000-01-11
JP3110983B2 (ja) 2000-11-20
US5607824A (en) 1997-03-04
JPH0862835A (ja) 1996-03-08

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