DE69609368T2 - Auf einem Isolator gebrauchte Halbleiteranordnungen und Herstellungsverfahren - Google Patents

Auf einem Isolator gebrauchte Halbleiteranordnungen und Herstellungsverfahren

Info

Publication number
DE69609368T2
DE69609368T2 DE69609368T DE69609368T DE69609368T2 DE 69609368 T2 DE69609368 T2 DE 69609368T2 DE 69609368 T DE69609368 T DE 69609368T DE 69609368 T DE69609368 T DE 69609368T DE 69609368 T2 DE69609368 T2 DE 69609368T2
Authority
DE
Germany
Prior art keywords
insulator
manufacturing processes
processes used
semiconductor assemblies
assemblies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69609368T
Other languages
English (en)
Other versions
DE69609368D1 (de
Inventor
Koichi Nedo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69609368D1 publication Critical patent/DE69609368D1/de
Publication of DE69609368T2 publication Critical patent/DE69609368T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
DE69609368T 1995-03-30 1996-03-28 Auf einem Isolator gebrauchte Halbleiteranordnungen und Herstellungsverfahren Expired - Lifetime DE69609368T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07334495A JP3781452B2 (ja) 1995-03-30 1995-03-30 誘電体分離半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69609368D1 DE69609368D1 (de) 2000-08-24
DE69609368T2 true DE69609368T2 (de) 2001-01-18

Family

ID=13515457

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69609368T Expired - Lifetime DE69609368T2 (de) 1995-03-30 1996-03-28 Auf einem Isolator gebrauchte Halbleiteranordnungen und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5773868A (de)
EP (1) EP0735594B1 (de)
JP (1) JP3781452B2 (de)
KR (1) KR100197768B1 (de)
DE (1) DE69609368T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735542A1 (de) * 1997-08-16 1999-02-18 Bosch Gmbh Robert Hochspannungsbauelement und Verfahren zu seiner Herstellung
KR19990024988A (ko) * 1997-09-09 1999-04-06 윤종용 반절연 폴리실리콘막을 이용한 전력 반도체장치의 제조방법
JP3602745B2 (ja) * 1999-06-30 2004-12-15 株式会社東芝 半導体装置
JP2003069019A (ja) * 2001-08-29 2003-03-07 Toshiba Corp 半導体装置およびその製造方法
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
US8796731B2 (en) 2010-08-20 2014-08-05 International Business Machines Corporation Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structure
JP6789177B2 (ja) 2017-06-02 2020-11-25 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3411051A (en) * 1964-12-29 1968-11-12 Texas Instruments Inc Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface
US4242697A (en) * 1979-03-14 1980-12-30 Bell Telephone Laboratories, Incorporated Dielectrically isolated high voltage semiconductor devices
DD154049A1 (de) * 1980-10-30 1982-02-17 Siegfried Wagner Steuerbares halbleiterbauelement
US5043787A (en) * 1980-12-29 1991-08-27 Rockwell International Corporation Extremely small area npn lateral transistor
US5241210A (en) * 1987-02-26 1993-08-31 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
JPH0736419B2 (ja) * 1990-02-09 1995-04-19 株式会社東芝 半導体装置及びその製造方法
DE4228832C2 (de) * 1992-08-29 1994-11-24 Daimler Benz Ag Feldeffekt-gesteuertes Halbleiterbauelement
WO1994015360A1 (en) * 1992-12-25 1994-07-07 Nippondenso Co., Ltd. Semiconductor device
JP3181759B2 (ja) * 1993-06-10 2001-07-03 富士通株式会社 半導体記憶装置
EP0631305B1 (de) * 1993-06-23 1998-04-15 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Isolationsgrabens in einem Substrat für Smart-Power-Technologien

Also Published As

Publication number Publication date
EP0735594A3 (de) 1997-01-08
JP3781452B2 (ja) 2006-05-31
KR100197768B1 (ko) 1999-06-15
US5773868A (en) 1998-06-30
DE69609368D1 (de) 2000-08-24
EP0735594B1 (de) 2000-07-19
JPH08274351A (ja) 1996-10-18
EP0735594A2 (de) 1996-10-02
KR960035966A (ko) 1996-10-28

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Legal Events

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