DE69604297T2 - Segmentierte leseleitungsschaltung insbesondere für multiport speicheranordnungen - Google Patents

Segmentierte leseleitungsschaltung insbesondere für multiport speicheranordnungen

Info

Publication number
DE69604297T2
DE69604297T2 DE69604297T DE69604297T DE69604297T2 DE 69604297 T2 DE69604297 T2 DE 69604297T2 DE 69604297 T DE69604297 T DE 69604297T DE 69604297 T DE69604297 T DE 69604297T DE 69604297 T2 DE69604297 T2 DE 69604297T2
Authority
DE
Germany
Prior art keywords
line circuit
reading line
storage arrangements
multiport storage
segmented reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69604297T
Other languages
English (en)
Other versions
DE69604297D1 (de
Inventor
Brian Mcminn
R Calvin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69604297D1 publication Critical patent/DE69604297D1/de
Publication of DE69604297T2 publication Critical patent/DE69604297T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
DE69604297T 1995-09-07 1996-07-11 Segmentierte leseleitungsschaltung insbesondere für multiport speicheranordnungen Expired - Lifetime DE69604297T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/525,431 US5646893A (en) 1995-09-07 1995-09-07 Segmented read line circuit particularly useful for multi-port storage arrays
PCT/US1996/011527 WO1997009719A1 (en) 1995-09-07 1996-07-11 Segmented read line circuit particularly useful for multi-port storage arrays

Publications (2)

Publication Number Publication Date
DE69604297D1 DE69604297D1 (de) 1999-10-21
DE69604297T2 true DE69604297T2 (de) 2000-05-11

Family

ID=24093229

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604297T Expired - Lifetime DE69604297T2 (de) 1995-09-07 1996-07-11 Segmentierte leseleitungsschaltung insbesondere für multiport speicheranordnungen

Country Status (4)

Country Link
US (1) US5646893A (de)
EP (1) EP0848851B1 (de)
DE (1) DE69604297T2 (de)
WO (1) WO1997009719A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5828623A (en) * 1996-02-23 1998-10-27 Integrated Device Technology, Inc. Parallel write logic for multi-port memory arrays
US5831896A (en) * 1996-12-17 1998-11-03 International Business Machines Corporation Memory cell
US6188596B1 (en) 1999-05-20 2001-02-13 Advanced Micro Devices, Inc. Layout for semiconductor memory including multi-level sensing
US6258642B1 (en) * 1999-05-20 2001-07-10 Advanced Micro Devices, Inc. Use of functional memory cells as guard cells in a semiconductor memory
US6278627B1 (en) * 2000-02-15 2001-08-21 Intel Corporation Multiple input bit-line detection with phase stealing latch in a memory design
US6625081B2 (en) * 2001-08-13 2003-09-23 Micron Technology, Inc. Synchronous flash memory with virtual segment architecture
KR100445632B1 (ko) * 2001-09-26 2004-08-25 삼성전자주식회사 커플링 노이즈를 감소시킬 수 있는 배선 구조
US7711337B2 (en) * 2006-01-14 2010-05-04 Paratek Microwave, Inc. Adaptive impedance matching module (AIMM) control architectures
US7626871B1 (en) * 2007-08-09 2009-12-01 Nvidia Corporation High-speed single-ended memory read circuit
US8154936B2 (en) * 2008-12-30 2012-04-10 Stmicroelectronics Pvt. Ltd. Single-ended bit line based storage system
US9489326B1 (en) 2009-03-09 2016-11-08 Cypress Semiconductor Corporation Multi-port integrated circuit devices and methods
US8595398B2 (en) * 2009-03-09 2013-11-26 Cypress Semiconductor Corp. Multi-port memory devices and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152589A (en) * 1981-03-13 1982-09-20 Fujitsu Ltd Semiconductor memory
DE3582828D1 (de) * 1984-07-26 1991-06-20 Texas Instruments Inc Dynamischer speicheraufbau mit segmentierten und quasi-gefalteten bitzeilen.
US5422857A (en) * 1989-11-21 1995-06-06 Matsushita Electric Industrial Co., Ltd. Semiconductor memory unit having overlapping addresses
US5355335A (en) * 1991-06-25 1994-10-11 Fujitsu Limited Semiconductor memory device having a plurality of writing and reading ports for decreasing hardware amount

Also Published As

Publication number Publication date
US5646893A (en) 1997-07-08
EP0848851B1 (de) 1999-09-15
EP0848851A1 (de) 1998-06-24
DE69604297D1 (de) 1999-10-21
WO1997009719A1 (en) 1997-03-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition