DE69604212D1 - Plasmareaktor - Google Patents

Plasmareaktor

Info

Publication number
DE69604212D1
DE69604212D1 DE69604212T DE69604212T DE69604212D1 DE 69604212 D1 DE69604212 D1 DE 69604212D1 DE 69604212 T DE69604212 T DE 69604212T DE 69604212 T DE69604212 T DE 69604212T DE 69604212 D1 DE69604212 D1 DE 69604212D1
Authority
DE
Germany
Prior art keywords
ceiling
winding
reactor chamber
power source
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69604212T
Other languages
English (en)
Other versions
DE69604212T2 (de
Inventor
Hiroji Hanawa
Gerald Zheyao Yin
Diana Xiaobing Ma
Philip M Salzman
Peter K Loewenhardt
Allen Zhao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23540169&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69604212(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69604212D1 publication Critical patent/DE69604212D1/de
Publication of DE69604212T2 publication Critical patent/DE69604212T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Chemical Vapour Deposition (AREA)
DE69604212T 1995-02-15 1996-01-23 Plasmareaktor Expired - Fee Related DE69604212T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/389,889 US5753044A (en) 1995-02-15 1995-02-15 RF plasma reactor with hybrid conductor and multi-radius dome ceiling

Publications (2)

Publication Number Publication Date
DE69604212D1 true DE69604212D1 (de) 1999-10-21
DE69604212T2 DE69604212T2 (de) 2000-03-23

Family

ID=23540169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604212T Expired - Fee Related DE69604212T2 (de) 1995-02-15 1996-01-23 Plasmareaktor

Country Status (6)

Country Link
US (1) US5753044A (de)
EP (1) EP0727807B1 (de)
JP (1) JPH08321490A (de)
KR (1) KR960032622A (de)
AT (1) ATE184729T1 (de)
DE (1) DE69604212T2 (de)

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US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
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US5919382A (en) * 1994-10-31 1999-07-06 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US6270617B1 (en) * 1995-02-15 2001-08-07 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6264812B1 (en) * 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US5964949A (en) * 1996-03-06 1999-10-12 Mattson Technology, Inc. ICP reactor having a conically-shaped plasma-generating section
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KR100489918B1 (ko) 1996-05-09 2005-08-04 어플라이드 머티어리얼스, 인코포레이티드 플라즈마발생및스퍼터링용코일
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US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
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US5944899A (en) * 1996-08-22 1999-08-31 Applied Materials, Inc. Inductively coupled plasma processing chamber
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US6323132B1 (en) 1998-01-13 2001-11-27 Applied Materials, Inc. Etching methods for anisotropic platinum profile
US6265318B1 (en) 1998-01-13 2001-07-24 Applied Materials, Inc. Iridium etchant methods for anisotropic profile
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US6506287B1 (en) 1998-03-16 2003-01-14 Applied Materials, Inc. Overlap design of one-turn coil
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US6466881B1 (en) * 1999-04-22 2002-10-15 Applied Materials Inc. Method for monitoring the quality of a protective coating in a reactor chamber
US6391220B1 (en) 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
US6518190B1 (en) 1999-12-23 2003-02-11 Applied Materials Inc. Plasma reactor with dry clean apparatus and method
KR20010063770A (ko) * 1999-12-24 2001-07-09 황 철 주 플라즈마를 이용하는 반도체소자 제조장치 및 이 장치를이용한 박막형성방법
US6833079B1 (en) * 2000-02-17 2004-12-21 Applied Materials Inc. Method of etching a shaped cavity
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6623595B1 (en) 2000-03-27 2003-09-23 Applied Materials, Inc. Wavy and roughened dome in plasma processing reactor
US6401652B1 (en) 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6462481B1 (en) 2000-07-06 2002-10-08 Applied Materials Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6685798B1 (en) 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
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US6409933B1 (en) 2000-07-06 2002-06-25 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6414648B1 (en) 2000-07-06 2002-07-02 Applied Materials, Inc. Plasma reactor having a symmetric parallel conductor coil antenna
US6592429B1 (en) 2000-07-28 2003-07-15 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity in a chemical mechanical polishing tool using carrier head signatures
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6589879B2 (en) 2001-01-18 2003-07-08 Applied Materials, Inc. Nitride open etch process based on trifluoromethane and sulfur hexafluoride
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US6503845B1 (en) 2001-05-01 2003-01-07 Applied Materials Inc. Method of etching a tantalum nitride layer in a high density plasma
JP2005503648A (ja) * 2001-09-14 2005-02-03 東京エレクトロン株式会社 プラズマリアクタ・コイルマグネット・システム
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
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US7871490B2 (en) * 2003-03-18 2011-01-18 Top Engineering Co., Ltd. Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution
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JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
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KR100769138B1 (ko) * 2005-10-12 2007-10-22 동부일렉트로닉스 주식회사 고밀도 플라즈마 화학기상 증착 방법을 이용한 플라즈마산화막 형성장치 및 형성방법
US20080078326A1 (en) * 2006-09-29 2008-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-cleaning tool and semiconductor processing apparatus using the same
US7678715B2 (en) * 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
JP5391209B2 (ja) 2009-01-15 2014-01-15 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5155235B2 (ja) * 2009-01-15 2013-03-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
US20110293853A1 (en) * 2009-02-13 2011-12-01 Mitsui Engineering & Shipbuilding Co., Ltd Thin film forming apparatus and thin film forming method
US9336996B2 (en) 2011-02-24 2016-05-10 Lam Research Corporation Plasma processing systems including side coils and methods related to the plasma processing systems
US20140187045A1 (en) * 2013-01-02 2014-07-03 Applied Materials, Inc. Silicon nitride gapfill implementing high density plasma
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US10211030B2 (en) * 2015-06-15 2019-02-19 Applied Materials, Inc. Source RF power split inner coil to improve BCD and etch depth performance
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JP7203869B2 (ja) * 2021-01-18 2023-01-13 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、およびプログラム
CN116752121B (zh) * 2023-06-15 2024-05-14 拓荆科技(上海)有限公司 一种盖板以及流体气相沉积装置

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Also Published As

Publication number Publication date
KR960032622A (ko) 1996-09-17
DE69604212T2 (de) 2000-03-23
ATE184729T1 (de) 1999-10-15
EP0727807B1 (de) 1999-09-15
JPH08321490A (ja) 1996-12-03
EP0727807A1 (de) 1996-08-21
US5753044A (en) 1998-05-19

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