DE69602056T2 - Formen einer Siliziummembran in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen - Google Patents

Formen einer Siliziummembran in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen

Info

Publication number
DE69602056T2
DE69602056T2 DE69602056T DE69602056T DE69602056T2 DE 69602056 T2 DE69602056 T2 DE 69602056T2 DE 69602056 T DE69602056 T DE 69602056T DE 69602056 T DE69602056 T DE 69602056T DE 69602056 T2 DE69602056 T2 DE 69602056T2
Authority
DE
Germany
Prior art keywords
anodizing
oxidizing
etching
cavity
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69602056T
Other languages
English (en)
Other versions
DE69602056D1 (de
Inventor
James D Seefeldt
Michael F Mattes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SSI Technologies LLC
Original Assignee
SSI Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SSI Technologies LLC filed Critical SSI Technologies LLC
Application granted granted Critical
Publication of DE69602056D1 publication Critical patent/DE69602056D1/de
Publication of DE69602056T2 publication Critical patent/DE69602056T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0115—Porous silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0178—Oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
DE69602056T 1995-06-07 1996-05-24 Formen einer Siliziummembran in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen Expired - Fee Related DE69602056T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/480,267 US5736430A (en) 1995-06-07 1995-06-07 Transducer having a silicon diaphragm and method for forming same

Publications (2)

Publication Number Publication Date
DE69602056D1 DE69602056D1 (de) 1999-05-20
DE69602056T2 true DE69602056T2 (de) 1999-12-09

Family

ID=23907305

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69602056T Expired - Fee Related DE69602056T2 (de) 1995-06-07 1996-05-24 Formen einer Siliziummembran in einem Hohlraum durch Anodisieren, Oxidieren und Ätzen

Country Status (5)

Country Link
US (1) US5736430A (de)
EP (1) EP0747686B1 (de)
JP (1) JP2853991B2 (de)
CA (1) CA2176051A1 (de)
DE (1) DE69602056T2 (de)

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DE10234547A1 (de) * 2002-07-30 2004-02-12 Fachhochschule Furtwangen Verfahren zur Bildung einer Ausnehmung in der Oberfläche eines Werkstücks, insbesondere zur Herstellung von Mikroformen
WO2018046307A1 (de) * 2016-09-06 2018-03-15 Robert Bosch Gmbh Verfahren zum herstellen eines mikromechanischen bauteils mit einer freigestellten drucksensoreinrichtung und mikromechanisches bauteil

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DE10029012C2 (de) * 2000-06-13 2002-06-06 Amtec Gmbh Mikrostruktur und Verfahren zu deren Herstellung
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US8357981B2 (en) 2010-05-28 2013-01-22 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Transducer devices having different frequencies based on layer thicknesses and method of fabricating the same
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US9608589B2 (en) 2010-10-26 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of forming acoustic resonator using intervening seed layer
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CN105428218B (zh) * 2015-12-10 2019-04-12 杭州士兰微电子股份有限公司 空腔形成方法以及半导体器件结构
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CN113776721B (zh) * 2021-09-07 2024-06-07 上海韦尔半导体股份有限公司 传感器集成芯片及其制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10234547A1 (de) * 2002-07-30 2004-02-12 Fachhochschule Furtwangen Verfahren zur Bildung einer Ausnehmung in der Oberfläche eines Werkstücks, insbesondere zur Herstellung von Mikroformen
DE10234547B4 (de) * 2002-07-30 2006-05-04 Fachhochschule Furtwangen Verfahren zur Bildung einer Ausnehmung in der Oberfläche eines Werkstücks, insbesondere zur Herstellung von Mikroformen
WO2018046307A1 (de) * 2016-09-06 2018-03-15 Robert Bosch Gmbh Verfahren zum herstellen eines mikromechanischen bauteils mit einer freigestellten drucksensoreinrichtung und mikromechanisches bauteil
CN109689566A (zh) * 2016-09-06 2019-04-26 罗伯特·博世有限公司 用于制造具有悬空的压力传感器装置的微机械构件的方法和微机械构件
KR20190044096A (ko) * 2016-09-06 2019-04-29 로베르트 보쉬 게엠베하 노출형 압력 센서 장치를 구비한 마이크로기계 부품의 제조 방법, 그리고 마이크로기계 부품
US10775253B2 (en) 2016-09-06 2020-09-15 Robert Bosch Gmbh Method for producing a micromechanical component with an exposed pressure sensor device and micromechanical component
KR102339528B1 (ko) * 2016-09-06 2021-12-16 로베르트 보쉬 게엠베하 노출형 압력 센서 장치를 구비한 마이크로기계 부품의 제조 방법, 그리고 마이크로기계 부품

Also Published As

Publication number Publication date
EP0747686A1 (de) 1996-12-11
CA2176051A1 (en) 1996-12-08
DE69602056D1 (de) 1999-05-20
JP2853991B2 (ja) 1999-02-03
US5736430A (en) 1998-04-07
EP0747686B1 (de) 1999-04-14
JPH0926372A (ja) 1997-01-28

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