DE69528406T2 - Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-Bearbeitungsverfahren - Google Patents
Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-BearbeitungsverfahrenInfo
- Publication number
- DE69528406T2 DE69528406T2 DE69528406T DE69528406T DE69528406T2 DE 69528406 T2 DE69528406 T2 DE 69528406T2 DE 69528406 T DE69528406 T DE 69528406T DE 69528406 T DE69528406 T DE 69528406T DE 69528406 T2 DE69528406 T2 DE 69528406T2
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- micro
- sealing
- machining process
- controlled resolution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000005459 micromachining Methods 0.000 title 1
- 238000007789 sealing Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
- G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
- G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
- B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/0136—Controlling etch progression by doping limited material regions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/012—Bonding, e.g. electrostatic for strain gauges
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Weting (AREA)
- Micromachines (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/229,501 US5437739A (en) | 1994-04-19 | 1994-04-19 | Etch control seal for dissolved wafer micromachining process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69528406D1 DE69528406D1 (de) | 2002-11-07 |
DE69528406T2 true DE69528406T2 (de) | 2003-02-20 |
Family
ID=22861512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69528406T Expired - Fee Related DE69528406T2 (de) | 1994-04-19 | 1995-02-20 | Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-Bearbeitungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US5437739A (de) |
EP (1) | EP0678905B1 (de) |
JP (1) | JP3752265B2 (de) |
DE (1) | DE69528406T2 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5824457A (en) | 1996-10-02 | 1998-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Use of WEE (wafer edge exposure) to prevent polyimide contamination |
US5854122A (en) * | 1997-03-13 | 1998-12-29 | The Boeing Company | Epitaxial layer for dissolved wafer micromachining process |
US6117794A (en) * | 1998-01-16 | 2000-09-12 | Lucent Technologies, Inc. | Method for improved metal oxide bonding of optical elements |
KR100508028B1 (ko) * | 1998-03-12 | 2005-11-03 | 삼성전자주식회사 | 초박형 기판의 제조 방법 |
DE10156257A1 (de) | 2001-11-09 | 2003-05-28 | Bosch Gmbh Robert | Mikromechanischer Resonator |
US6770504B2 (en) * | 2003-01-06 | 2004-08-03 | Honeywell International Inc. | Methods and structure for improving wafer bow control |
US6888233B2 (en) * | 2003-03-10 | 2005-05-03 | Honeywell International Inc. | Systems for buried electrical feedthroughs in a glass-silicon MEMS process |
JP4504237B2 (ja) * | 2005-03-18 | 2010-07-14 | 富士通株式会社 | ウエットエッチング方法、マイクロ可動素子製造方法、およびマイクロ可動素子 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4523964A (en) * | 1981-02-12 | 1985-06-18 | Becton, Dickinson And Company | High temperature layered silicon structures |
US4465549A (en) * | 1984-01-26 | 1984-08-14 | Rca Corporation | Method of removing a glass backing plate from one major surface of a semiconductor wafer |
JPH07111940B2 (ja) * | 1987-09-11 | 1995-11-29 | 日産自動車株式会社 | 半導体基板の接合方法 |
US4934190A (en) * | 1987-12-23 | 1990-06-19 | Siemens-Bendix Automotive Electronics L.P. | Silicon-based sensors |
JPH0669063B2 (ja) * | 1989-11-10 | 1994-08-31 | 株式会社東芝 | 半導体ウェハの製造方法 |
JPH03265154A (ja) * | 1990-03-15 | 1991-11-26 | Nippon Soken Inc | 半導体基板の製造方法 |
JP2996507B2 (ja) * | 1990-11-02 | 2000-01-11 | 電気化学工業株式会社 | 金属板ベース回路基板 |
JPH05203519A (ja) * | 1992-01-29 | 1993-08-10 | Seiko Instr Inc | 圧力センサの製造方法 |
JPH05226483A (ja) * | 1992-02-10 | 1993-09-03 | Toshiba Corp | モノリシックマイクロ波集積回路 |
-
1994
- 1994-04-19 US US08/229,501 patent/US5437739A/en not_active Expired - Fee Related
-
1995
- 1995-02-20 EP EP95102347A patent/EP0678905B1/de not_active Expired - Lifetime
- 1995-02-20 DE DE69528406T patent/DE69528406T2/de not_active Expired - Fee Related
- 1995-04-18 JP JP09204995A patent/JP3752265B2/ja not_active Expired - Fee Related
- 1995-05-02 US US08/434,153 patent/US5509974A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH07312361A (ja) | 1995-11-28 |
JP3752265B2 (ja) | 2006-03-08 |
EP0678905B1 (de) | 2002-10-02 |
EP0678905A2 (de) | 1995-10-25 |
US5437739A (en) | 1995-08-01 |
DE69528406D1 (de) | 2002-11-07 |
EP0678905A3 (de) | 1997-10-08 |
US5509974A (en) | 1996-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |