DE69528406T2 - Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-Bearbeitungsverfahren - Google Patents

Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-Bearbeitungsverfahren

Info

Publication number
DE69528406T2
DE69528406T2 DE69528406T DE69528406T DE69528406T2 DE 69528406 T2 DE69528406 T2 DE 69528406T2 DE 69528406 T DE69528406 T DE 69528406T DE 69528406 T DE69528406 T DE 69528406T DE 69528406 T2 DE69528406 T2 DE 69528406T2
Authority
DE
Germany
Prior art keywords
wafer
micro
sealing
machining process
controlled resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69528406T
Other languages
English (en)
Other versions
DE69528406D1 (de
Inventor
Kenneth M Hays
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of DE69528406D1 publication Critical patent/DE69528406D1/de
Application granted granted Critical
Publication of DE69528406T2 publication Critical patent/DE69528406T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0001—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means
    • G01L9/0008—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations
    • G01L9/0019—Transmitting or indicating the displacement of elastically deformable gauges by electric, electro-mechanical, magnetic or electro-magnetic means using vibrations of a semiconductive element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/0136—Controlling etch progression by doping limited material regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
  • ing And Chemical Polishing (AREA)
DE69528406T 1994-04-19 1995-02-20 Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-Bearbeitungsverfahren Expired - Fee Related DE69528406T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/229,501 US5437739A (en) 1994-04-19 1994-04-19 Etch control seal for dissolved wafer micromachining process

Publications (2)

Publication Number Publication Date
DE69528406D1 DE69528406D1 (de) 2002-11-07
DE69528406T2 true DE69528406T2 (de) 2003-02-20

Family

ID=22861512

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69528406T Expired - Fee Related DE69528406T2 (de) 1994-04-19 1995-02-20 Abdichtung für die kontrollierte Auflösung eines Wafers im Mikro-Bearbeitungsverfahren

Country Status (4)

Country Link
US (2) US5437739A (de)
EP (1) EP0678905B1 (de)
JP (1) JP3752265B2 (de)
DE (1) DE69528406T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5824457A (en) * 1996-10-02 1998-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Use of WEE (wafer edge exposure) to prevent polyimide contamination
US5854122A (en) * 1997-03-13 1998-12-29 The Boeing Company Epitaxial layer for dissolved wafer micromachining process
US6117794A (en) * 1998-01-16 2000-09-12 Lucent Technologies, Inc. Method for improved metal oxide bonding of optical elements
KR100508028B1 (ko) * 1998-03-12 2005-11-03 삼성전자주식회사 초박형 기판의 제조 방법
DE10156257A1 (de) 2001-11-09 2003-05-28 Bosch Gmbh Robert Mikromechanischer Resonator
US6770504B2 (en) * 2003-01-06 2004-08-03 Honeywell International Inc. Methods and structure for improving wafer bow control
US6888233B2 (en) * 2003-03-10 2005-05-03 Honeywell International Inc. Systems for buried electrical feedthroughs in a glass-silicon MEMS process
JP4504237B2 (ja) * 2005-03-18 2010-07-14 富士通株式会社 ウエットエッチング方法、マイクロ可動素子製造方法、およびマイクロ可動素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4523964A (en) * 1981-02-12 1985-06-18 Becton, Dickinson And Company High temperature layered silicon structures
US4465549A (en) * 1984-01-26 1984-08-14 Rca Corporation Method of removing a glass backing plate from one major surface of a semiconductor wafer
JPH07111940B2 (ja) * 1987-09-11 1995-11-29 日産自動車株式会社 半導体基板の接合方法
US4934190A (en) * 1987-12-23 1990-06-19 Siemens-Bendix Automotive Electronics L.P. Silicon-based sensors
JPH0669063B2 (ja) * 1989-11-10 1994-08-31 株式会社東芝 半導体ウェハの製造方法
JPH03265154A (ja) * 1990-03-15 1991-11-26 Nippon Soken Inc 半導体基板の製造方法
JP2996507B2 (ja) * 1990-11-02 2000-01-11 電気化学工業株式会社 金属板ベース回路基板
JPH05203519A (ja) * 1992-01-29 1993-08-10 Seiko Instr Inc 圧力センサの製造方法
JPH05226483A (ja) * 1992-02-10 1993-09-03 Toshiba Corp モノリシックマイクロ波集積回路

Also Published As

Publication number Publication date
JPH07312361A (ja) 1995-11-28
US5509974A (en) 1996-04-23
JP3752265B2 (ja) 2006-03-08
DE69528406D1 (de) 2002-11-07
EP0678905A2 (de) 1995-10-25
EP0678905A3 (de) 1997-10-08
US5437739A (en) 1995-08-01
EP0678905B1 (de) 2002-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee