DE69526649T2 - Sputter-target mit ultrafeinen orientierten körnern und verfahren zu deren herstellung - Google Patents
Sputter-target mit ultrafeinen orientierten körnern und verfahren zu deren herstellungInfo
- Publication number
- DE69526649T2 DE69526649T2 DE69526649T DE69526649T DE69526649T2 DE 69526649 T2 DE69526649 T2 DE 69526649T2 DE 69526649 T DE69526649 T DE 69526649T DE 69526649 T DE69526649 T DE 69526649T DE 69526649 T2 DE69526649 T2 DE 69526649T2
- Authority
- DE
- Germany
- Prior art keywords
- ultra
- production
- sputter target
- oriented grain
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C23/00—Extruding metal; Impact extrusion
- B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C23/00—Extruding metal; Impact extrusion
- B21C23/01—Extruding metal; Impact extrusion starting from material of particular form or shape, e.g. mechanically pre-treated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/20—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by extruding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0408—Light metal alloys
- C22C1/0416—Aluminium-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/363,397 US5590389A (en) | 1994-12-23 | 1994-12-23 | Sputtering target with ultra-fine, oriented grains and method of making same |
PCT/US1995/016794 WO1996020055A1 (en) | 1994-12-23 | 1995-12-22 | Sputtering target with ultra-fine, oriented grains and method of making same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69526649D1 DE69526649D1 (de) | 2002-06-13 |
DE69526649T2 true DE69526649T2 (de) | 2002-12-05 |
Family
ID=23430046
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69532617T Expired - Lifetime DE69532617T2 (de) | 1994-12-23 | 1995-12-22 | Target für die Kathodenzerstäubung mit ultrafeinen orienterten Körnern |
DE69526649T Expired - Lifetime DE69526649T2 (de) | 1994-12-23 | 1995-12-22 | Sputter-target mit ultrafeinen orientierten körnern und verfahren zu deren herstellung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69532617T Expired - Lifetime DE69532617T2 (de) | 1994-12-23 | 1995-12-22 | Target für die Kathodenzerstäubung mit ultrafeinen orienterten Körnern |
Country Status (6)
Country | Link |
---|---|
US (3) | US5590389A (de) |
EP (2) | EP0746436B1 (de) |
JP (1) | JP3597539B2 (de) |
KR (1) | KR100217484B1 (de) |
DE (2) | DE69532617T2 (de) |
WO (1) | WO1996020055A1 (de) |
Families Citing this family (80)
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US5500301A (en) * | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
FR2756572B1 (fr) * | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
JP3365954B2 (ja) * | 1997-04-14 | 2003-01-14 | 株式会社神戸製鋼所 | 半導体電極用Al−Ni−Y 合金薄膜および半導体電極用Al−Ni−Y 合金薄膜形成用スパッタリングターゲット |
US6569270B2 (en) | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
US6001227A (en) | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6315872B1 (en) | 1997-11-26 | 2001-11-13 | Applied Materials, Inc. | Coil for sputter deposition |
US6139701A (en) * | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
US6858102B1 (en) | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
US6113761A (en) | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6521173B2 (en) * | 1999-08-19 | 2003-02-18 | H.C. Starck, Inc. | Low oxygen refractory metal powder for powder metallurgy |
US6391163B1 (en) | 1999-09-27 | 2002-05-21 | Applied Materials, Inc. | Method of enhancing hardness of sputter deposited copper films |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6423161B1 (en) * | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
AU1609501A (en) * | 1999-11-24 | 2001-06-04 | Honeywell International, Inc. | Physical vapor deposition targets, conductive integrated circuit metal alloy interconnections, electroplating anodes, and metal alloys for use as a conductive interconnection in an integrated circuit |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
US6780794B2 (en) * | 2000-01-20 | 2004-08-24 | Honeywell International Inc. | Methods of bonding physical vapor deposition target materials to backing plate materials |
US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
US7517417B2 (en) * | 2000-02-02 | 2009-04-14 | Honeywell International Inc. | Tantalum PVD component producing methods |
US6698647B1 (en) | 2000-03-10 | 2004-03-02 | Honeywell International Inc. | Aluminum-comprising target/backing plate structures |
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
US6399215B1 (en) | 2000-03-28 | 2002-06-04 | The Regents Of The University Of California | Ultrafine-grained titanium for medical implants |
DE10017414A1 (de) * | 2000-04-07 | 2001-10-11 | Unaxis Materials Deutschland G | Sputtertarget auf der Basis eines Metalls oder einer Metalllegierung und Verfahren zu dessen Herstellung |
US6197129B1 (en) * | 2000-05-04 | 2001-03-06 | The United States Of America As Represented By The United States Department Of Energy | Method for producing ultrafine-grained materials using repetitive corrugation and straightening |
EP1287172B1 (de) * | 2000-05-22 | 2008-10-29 | Cabot Corporation | Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung |
AU2001265309A1 (en) * | 2000-06-02 | 2001-12-17 | Honeywell International, Inc. | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
WO2001094659A2 (en) * | 2000-06-02 | 2001-12-13 | Honeywell International Inc. | Sputtering target |
US7041204B1 (en) * | 2000-10-27 | 2006-05-09 | Honeywell International Inc. | Physical vapor deposition components and methods of formation |
US6946039B1 (en) * | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
EP1366203B1 (de) * | 2001-02-20 | 2006-09-13 | H. C. Starck, Inc. | Platten aus refraktärem metall mit einheitlicher textur und verfahren zu ihrer herstellung |
EP1383936A2 (de) * | 2001-05-01 | 2004-01-28 | Honeywell International, Inc. | Ti und zr enthaltende sputtertargets |
JP2004538371A (ja) * | 2001-08-13 | 2004-12-24 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | スパッタターゲット |
US6770154B2 (en) * | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
US7081148B2 (en) * | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP2003105468A (ja) * | 2001-09-25 | 2003-04-09 | Furukawa Electric Co Ltd:The | 端子用アルミニウム合金材料および前記材料からなる端子 |
US6605199B2 (en) * | 2001-11-14 | 2003-08-12 | Praxair S.T. Technology, Inc. | Textured-metastable aluminum alloy sputter targets and method of manufacture |
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US6883359B1 (en) * | 2001-12-20 | 2005-04-26 | The Texas A&M University System | Equal channel angular extrusion method |
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US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
JP4526758B2 (ja) * | 2002-09-11 | 2010-08-18 | 日鉱金属株式会社 | 珪化鉄粉末及びその製造方法 |
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RU2534324C1 (ru) * | 2013-10-11 | 2014-11-27 | Федеральное государственное бюджетное учреждение науки Институт физики прочности и материаловедения Сибирского отделения Российской академии наук (ИФПМ СО РАН) | Способ изготовления композиционного катода для нанесения многокомпонентных ионно-плазменных покрытий |
JP5828350B2 (ja) * | 2014-04-11 | 2015-12-02 | 三菱マテリアル株式会社 | 円筒型スパッタリングターゲット用素材の製造方法 |
US9378760B2 (en) | 2014-07-31 | 2016-06-28 | Seagate Technology Llc | Data reader with tuned microstructure |
KR102622052B1 (ko) | 2015-08-03 | 2024-01-08 | 허니웰 인터내셔널 인코포레이티드 | 개선된 특성을 갖는 무마찰 단조 알루미늄 합금 스퍼터링 타겟 |
US10900102B2 (en) | 2016-09-30 | 2021-01-26 | Honeywell International Inc. | High strength aluminum alloy backing plate and methods of making |
CN106734297A (zh) * | 2016-11-24 | 2017-05-31 | 上海电机学院 | 钛废弃切屑再制造的t型通道挤压固化方法 |
CN108866489B (zh) * | 2017-05-16 | 2020-05-19 | 中国科学院金属研究所 | 一种具有抗菌功能的钛合金纳米涂层及其制备方法 |
US11062889B2 (en) | 2017-06-26 | 2021-07-13 | Tosoh Smd, Inc. | Method of production of uniform metal plates and sputtering targets made thereby |
JP2019173048A (ja) * | 2018-03-26 | 2019-10-10 | Jx金属株式会社 | スパッタリングターゲット部材及びその製造方法 |
CN111266586A (zh) * | 2020-03-02 | 2020-06-12 | 合肥尚德新材料有限公司 | 一种制备大尺寸高致密度含稀土ito铝靶材的方法 |
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JPH01290765A (ja) * | 1988-05-16 | 1989-11-22 | Toshiba Corp | スパッタリングターゲット |
US4964962A (en) * | 1988-10-08 | 1990-10-23 | Matsushita Electric Works, Ltd. | Method for forming conducting metal layer on inorganic substrate |
US4961832A (en) * | 1989-03-14 | 1990-10-09 | Shagun Vladimir A | Apparatus for applying film coatings onto substrates in vacuum |
JP2712561B2 (ja) * | 1989-05-26 | 1998-02-16 | 住友化学工業株式会社 | スパッタリング用アルミニウムターゲット |
JPH0313570A (ja) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | 半導体製造装置及び半導体製造装置用ターゲット |
JPH0371510A (ja) * | 1989-08-10 | 1991-03-27 | Showa Denko Kk | 透明導電膜 |
WO1992001080A1 (en) * | 1990-07-03 | 1992-01-23 | Tosoh Smd, Inc. | Improved sputter target for coating compact discs, methods of use thereof, and methods of manufacture of the targets |
JP2934714B2 (ja) * | 1990-08-22 | 1999-08-16 | カシオ計算機株式会社 | 合金薄膜の形成方法 |
US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
US5400633A (en) * | 1993-09-03 | 1995-03-28 | The Texas A&M University System | Apparatus and method for deformation processing of metals, ceramics, plastics and other materials |
JP3002369U (ja) | 1994-03-25 | 1994-09-20 | ホン シェン ウェイ | 三脚スタンドの固定構造 |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
-
1994
- 1994-12-23 US US08/363,397 patent/US5590389A/en not_active Expired - Lifetime
-
1995
- 1995-10-30 US US08/544,970 patent/US5809393A/en not_active Expired - Fee Related
- 1995-10-30 US US08/544,971 patent/US5780755A/en not_active Expired - Lifetime
- 1995-12-22 DE DE69532617T patent/DE69532617T2/de not_active Expired - Lifetime
- 1995-12-22 KR KR1019960704629A patent/KR100217484B1/ko not_active IP Right Cessation
- 1995-12-22 WO PCT/US1995/016794 patent/WO1996020055A1/en active IP Right Grant
- 1995-12-22 EP EP95944653A patent/EP0746436B1/de not_active Expired - Lifetime
- 1995-12-22 JP JP52055496A patent/JP3597539B2/ja not_active Expired - Fee Related
- 1995-12-22 DE DE69526649T patent/DE69526649T2/de not_active Expired - Lifetime
- 1995-12-22 EP EP00118588A patent/EP1053810B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR970701113A (ko) | 1997-03-17 |
US5590389A (en) | 1996-12-31 |
EP0746436B1 (de) | 2002-05-08 |
KR100217484B1 (ko) | 1999-09-01 |
DE69532617D1 (de) | 2004-04-01 |
DE69526649D1 (de) | 2002-06-13 |
EP0746436A1 (de) | 1996-12-11 |
EP1053810A2 (de) | 2000-11-22 |
US5809393A (en) | 1998-09-15 |
JPH09509985A (ja) | 1997-10-07 |
US5780755A (en) | 1998-07-14 |
DE69532617T2 (de) | 2005-02-03 |
EP1053810A3 (de) | 2000-11-29 |
JP3597539B2 (ja) | 2004-12-08 |
WO1996020055A1 (en) | 1996-07-04 |
EP0746436A4 (de) | 1997-05-07 |
EP1053810B1 (de) | 2004-02-25 |
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