DE69526637D1 - Reinigungsmittelzusammensetzung und Verfahren zum Entfernen von Photoresist mit dieser Zusammensetzung - Google Patents
Reinigungsmittelzusammensetzung und Verfahren zum Entfernen von Photoresist mit dieser ZusammensetzungInfo
- Publication number
- DE69526637D1 DE69526637D1 DE69526637T DE69526637T DE69526637D1 DE 69526637 D1 DE69526637 D1 DE 69526637D1 DE 69526637 T DE69526637 T DE 69526637T DE 69526637 T DE69526637 T DE 69526637T DE 69526637 D1 DE69526637 D1 DE 69526637D1
- Authority
- DE
- Germany
- Prior art keywords
- composition
- removing photoresist
- detergent composition
- detergent
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP207795A JPH08190205A (ja) | 1995-01-10 | 1995-01-10 | フォトレジスト剥離剤組成物および剥離方法 |
JP6974695A JPH08262746A (ja) | 1995-03-28 | 1995-03-28 | フォトレジスト剥離剤組成物および剥離方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69526637D1 true DE69526637D1 (de) | 2002-06-13 |
DE69526637T2 DE69526637T2 (de) | 2002-10-17 |
Family
ID=26335396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526637T Expired - Fee Related DE69526637T2 (de) | 1995-01-10 | 1995-12-13 | Reinigungsmittelzusammensetzung und Verfahren zum Entfernen von Photoresist mit dieser Zusammensetzung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5567574A (de) |
EP (1) | EP0723205B1 (de) |
KR (1) | KR100377445B1 (de) |
DE (1) | DE69526637T2 (de) |
TW (1) | TW389848B (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3614242B2 (ja) * | 1996-04-12 | 2005-01-26 | 三菱瓦斯化学株式会社 | フォトレジスト剥離剤及び半導体集積回路の製造方法 |
US6132522A (en) * | 1996-07-19 | 2000-10-17 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using sequential chemical processing |
US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
US5989353A (en) * | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
SG85093A1 (en) * | 1997-03-07 | 2001-12-19 | Chartered Semiconductor Mfg | Apparatus and method for polymer removal after metal etching in a plasma reactor |
US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
US6268323B1 (en) | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
JP2002505037A (ja) * | 1997-06-13 | 2002-02-12 | シーエフエムテイ・インコーポレーテツド | 半導体ウェーハ処理方法 |
EP0907203A3 (de) | 1997-09-03 | 2000-07-12 | Siemens Aktiengesellschaft | Strukturierungsverfahren |
US6012469A (en) | 1997-09-17 | 2000-01-11 | Micron Technology, Inc. | Etch residue clean |
US6231677B1 (en) | 1998-02-27 | 2001-05-15 | Kanto Kagaku Kabushiki Kaisha | Photoresist stripping liquid composition |
US6105588A (en) | 1998-05-27 | 2000-08-22 | Micron Technology, Inc. | Method of resist stripping during semiconductor device fabrication |
KR100288769B1 (ko) * | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
JP2000200744A (ja) * | 1999-01-07 | 2000-07-18 | Mitsubishi Electric Corp | レジスト残渣除去装置及び除去方法 |
JP2000284506A (ja) * | 1999-03-31 | 2000-10-13 | Sharp Corp | フォトレジスト剥離剤組成物および剥離方法 |
US6723691B2 (en) * | 1999-11-16 | 2004-04-20 | Advanced Technology Materials, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6492308B1 (en) * | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6194366B1 (en) * | 1999-11-16 | 2001-02-27 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
US6310019B1 (en) * | 2000-07-05 | 2001-10-30 | Wako Pure Chemical Industries, Ltd. | Cleaning agent for a semi-conductor substrate |
US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
JP3787085B2 (ja) | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
CN1240816C (zh) * | 2001-12-12 | 2006-02-08 | 海力士半导体有限公司 | 除去光致抗蚀剂的洗涤液 |
KR100518714B1 (ko) * | 2002-02-19 | 2005-10-05 | 주식회사 덕성 | 레지스트 박리액 조성물 |
KR101017738B1 (ko) * | 2002-03-12 | 2011-02-28 | 미츠비시 가스 가가쿠 가부시키가이샤 | 포토레지스트 박리제 조성물 및 세정 조성물 |
JP4252758B2 (ja) * | 2002-03-22 | 2009-04-08 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
TWI295076B (en) * | 2002-09-19 | 2008-03-21 | Dongwoo Fine Chem Co Ltd | Washing liquid for semiconductor substrate and method of producing semiconductor device |
PL1787168T3 (pl) * | 2004-07-15 | 2010-11-30 | Avantor Performance Mat Inc | Zawierające fruktozę, niewodne kompozycje do czyszczenia mikroelektroniki |
US9217929B2 (en) * | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
US20060063687A1 (en) * | 2004-09-17 | 2006-03-23 | Minsek David W | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate |
SG158920A1 (en) * | 2005-01-27 | 2010-02-26 | Advanced Tech Materials | Compositions for processing of semiconductor substrates |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
WO2007046655A1 (en) * | 2005-10-21 | 2007-04-26 | Samsung Electronics Co., Ltd. | Stripper composition for removing dry etching residue and stripping method |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
US8685909B2 (en) | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
TW200925268A (en) * | 2007-12-06 | 2009-06-16 | Mallinckrodt Baker Inc | Fluoride-containing photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction |
TW200925800A (en) * | 2007-12-06 | 2009-06-16 | Mallinckrodt Baker Inc | Fluoride-free photoresist stripper or residue removing cleaning compositions containing conjugate oligomeric or polymeric material of alpha-hydroxycarbonyl compound/amine or ammonia reaction |
WO2010048139A2 (en) | 2008-10-21 | 2010-04-29 | Advanced Technology Materials, Inc. | Copper cleaning and protection formulations |
KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
JP5659729B2 (ja) * | 2010-11-24 | 2015-01-28 | 三菱瓦斯化学株式会社 | フォトレジスト剥離剤組成物 |
US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
KR102468776B1 (ko) | 2015-09-21 | 2022-11-22 | 삼성전자주식회사 | 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
US10400167B2 (en) | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
CN105695126B (zh) * | 2016-04-19 | 2018-09-18 | 福州大学 | 一种用于印刷线路板的环保型水基清洗剂 |
US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0612455B2 (ja) * | 1985-08-10 | 1994-02-16 | 長瀬産業株式会社 | 剥離剤組成物 |
US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
JP2578821B2 (ja) * | 1987-08-10 | 1997-02-05 | 東京応化工業株式会社 | ポジ型ホトレジスト用剥離液 |
US5185235A (en) * | 1987-09-09 | 1993-02-09 | Tokyo Ohka Kogyo Co., Ltd. | Remover solution for photoresist |
JPH072923B2 (ja) * | 1990-07-20 | 1995-01-18 | ユシロ化学工業株式会社 | 保護塗膜の除去用洗浄剤 |
US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
-
1995
- 1995-12-08 US US08/569,673 patent/US5567574A/en not_active Expired - Lifetime
- 1995-12-12 TW TW084113224A patent/TW389848B/zh not_active IP Right Cessation
- 1995-12-13 EP EP95119606A patent/EP0723205B1/de not_active Expired - Lifetime
- 1995-12-13 DE DE69526637T patent/DE69526637T2/de not_active Expired - Fee Related
-
1996
- 1996-01-10 KR KR1019960000342A patent/KR100377445B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0723205A1 (de) | 1996-07-24 |
DE69526637T2 (de) | 2002-10-17 |
KR100377445B1 (ko) | 2003-08-21 |
EP0723205B1 (de) | 2002-05-08 |
TW389848B (en) | 2000-05-11 |
US5567574A (en) | 1996-10-22 |
KR960029911A (ko) | 1996-08-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |