DE69518353T2 - Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben - Google Patents
Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselbenInfo
- Publication number
- DE69518353T2 DE69518353T2 DE69518353T DE69518353T DE69518353T2 DE 69518353 T2 DE69518353 T2 DE 69518353T2 DE 69518353 T DE69518353 T DE 69518353T DE 69518353 T DE69518353 T DE 69518353T DE 69518353 T2 DE69518353 T2 DE 69518353T2
- Authority
- DE
- Germany
- Prior art keywords
- polarization
- controlling
- light source
- communication system
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06832—Stabilising during amplitude modulation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2302/00—Amplification / lasing wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6122961A JPH07307527A (ja) | 1994-05-12 | 1994-05-12 | 光半導体装置、光通信用光源の駆動方法、それを用いた光通信方式、及び光通信システム |
JP13107594A JP3270626B2 (ja) | 1994-05-19 | 1994-05-19 | 直接偏波変調光源制御方法及び集積半導体装置の駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69518353T2 true DE69518353T2 (de) | 2001-02-15 |
DE69518353T4 DE69518353T4 (de) | 2001-08-02 |
Family
ID=26459998
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518353T Expired - Lifetime DE69518353T4 (de) | 1994-05-12 | 1995-05-09 | Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben |
DE69518353A Expired - Fee Related DE69518353D1 (de) | 1994-05-12 | 1995-05-09 | Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518353A Expired - Fee Related DE69518353D1 (de) | 1994-05-12 | 1995-05-09 | Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben |
Country Status (3)
Country | Link |
---|---|
US (1) | US5659560A (de) |
EP (1) | EP0682390B1 (de) |
DE (2) | DE69518353T4 (de) |
Families Citing this family (52)
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JPH08172237A (ja) * | 1994-12-17 | 1996-07-02 | Canon Inc | 半導体レーザ、その変調方式およびそれを用いた光通信システム |
US5764670A (en) * | 1995-02-27 | 1998-06-09 | Canon Kabushiki Kaisha | Semiconductor laser apparatus requiring no external modulator, method of driving semiconductor laser device, and optical communication system using the semiconductor laser apparatus |
US5600126A (en) * | 1995-06-20 | 1997-02-04 | Xerox Corporation | Method and apparatus for controlling the power output of multiple laser diodes |
JP3720514B2 (ja) * | 1996-03-19 | 2005-11-30 | キヤノン株式会社 | 半導体レーザ装置の駆動方法、半導体レーザ装置及び光伝送システム |
JP3518837B2 (ja) * | 1996-08-22 | 2004-04-12 | キヤノン株式会社 | 出力光の偏波を切り換えることができる半導体レーザ及び半導体レーザ装置及びその駆動方法 |
US6868101B1 (en) * | 1996-09-13 | 2005-03-15 | Kol Ohr Corporation | Low cost means of modulating a laser |
JPH1174599A (ja) * | 1997-07-01 | 1999-03-16 | Canon Inc | 信号伝送用半導体光源装置の駆動方法、信号伝送用光源装置、およびそれを用いた光通信方法および光通信システム |
JPH11233898A (ja) * | 1997-12-03 | 1999-08-27 | Canon Inc | 分布帰還型半導体レーザとその駆動方法 |
JPH11243256A (ja) * | 1997-12-03 | 1999-09-07 | Canon Inc | 分布帰還形半導体レーザとその駆動方法 |
US6222861B1 (en) * | 1998-09-03 | 2001-04-24 | Photonic Solutions, Inc. | Method and apparatus for controlling the wavelength of a laser |
US6175446B1 (en) * | 1998-09-23 | 2001-01-16 | Sarnoff Corporation | Polarization-independent semiconductor optical amplifier |
US6801555B1 (en) * | 1999-04-26 | 2004-10-05 | Finisar Corporation | Lasing semiconductor optical amplifier with output power monitor and control |
JP2001042170A (ja) * | 1999-07-28 | 2001-02-16 | Canon Inc | 光配線装置、その駆動方法およびそれを用いた電子機器 |
KR100353419B1 (ko) * | 2000-03-10 | 2002-09-18 | 삼성전자 주식회사 | 편광 무의존 반도체 광증폭기 |
US6813063B2 (en) * | 2000-08-18 | 2004-11-02 | Japan Science And Technology Agency | Exciton polariton optical switch |
US7346083B2 (en) * | 2001-04-10 | 2008-03-18 | Hrl Laboratories, Llc | Bandwidth enhanced self-injection locked DFB laser with narrow linewidth |
US20030068125A1 (en) * | 2001-09-28 | 2003-04-10 | The Furukawa Electric Co., Ltd. | Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module |
JP4128356B2 (ja) * | 2001-12-28 | 2008-07-30 | 富士通株式会社 | 光デバイスの制御装置 |
US6792171B2 (en) * | 2002-11-15 | 2004-09-14 | Jds Uniphase Corporation | Receiver optical sub-assembly |
JP4359035B2 (ja) * | 2002-11-21 | 2009-11-04 | 富士通株式会社 | 光中継器 |
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JP4533044B2 (ja) * | 2003-08-27 | 2010-08-25 | キヤノン株式会社 | センサ |
JP4136858B2 (ja) * | 2003-09-12 | 2008-08-20 | キヤノン株式会社 | 位置検出装置、及び情報入力装置 |
US7885311B2 (en) * | 2007-03-27 | 2011-02-08 | Imra America, Inc. | Beam stabilized fiber laser |
JP4250573B2 (ja) * | 2004-07-16 | 2009-04-08 | キヤノン株式会社 | 素子 |
JP4546326B2 (ja) * | 2004-07-30 | 2010-09-15 | キヤノン株式会社 | センシング装置 |
MX2007004772A (es) * | 2004-10-22 | 2007-10-08 | Vidiator Entpr Inc | Metodo y sistema para mensajeria grafica en 3d para dispositivos moviles. |
JP4402026B2 (ja) * | 2005-08-30 | 2010-01-20 | キヤノン株式会社 | センシング装置 |
JP4773839B2 (ja) * | 2006-02-15 | 2011-09-14 | キヤノン株式会社 | 対象物の情報を検出する検出装置 |
JP2007248850A (ja) * | 2006-03-16 | 2007-09-27 | Oki Electric Ind Co Ltd | マッハツェンダ型半導体素子及びその制御方法 |
JP4481946B2 (ja) | 2006-03-17 | 2010-06-16 | キヤノン株式会社 | 検出素子及び画像形成装置 |
JP5132146B2 (ja) * | 2006-03-17 | 2013-01-30 | キヤノン株式会社 | 分析方法、分析装置、及び検体保持部材 |
JP4898472B2 (ja) | 2006-04-11 | 2012-03-14 | キヤノン株式会社 | 検査装置 |
JP5196750B2 (ja) | 2006-08-25 | 2013-05-15 | キヤノン株式会社 | 発振素子 |
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JP5144175B2 (ja) * | 2007-08-31 | 2013-02-13 | キヤノン株式会社 | 電磁波を用いる検査装置及び検査方法 |
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JP5414546B2 (ja) | 2010-01-12 | 2014-02-12 | キヤノン株式会社 | 容量検出型の電気機械変換素子 |
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JP6435764B2 (ja) * | 2014-10-09 | 2018-12-12 | 富士通株式会社 | 光送信器、光変調器の制御方法、及び、光変調器の制御装置 |
US10411430B1 (en) * | 2015-04-20 | 2019-09-10 | Aurrion, Inc. | Optical system and method for locking a wavelength of a tunable laser |
US10074959B2 (en) * | 2016-08-03 | 2018-09-11 | Emcore Corporation | Modulated laser source and methods of its fabrication and operation |
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US11095390B2 (en) | 2018-08-23 | 2021-08-17 | International Business Machines Corporation | Polarization-insensitive optical link |
CN110544873B (zh) * | 2019-08-29 | 2020-11-24 | 厦门市三安集成电路有限公司 | 分段式调制结构、激光器及其制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58225745A (ja) * | 1982-06-24 | 1983-12-27 | Fujitsu Ltd | 半導体レ−ザ送信回路 |
US4685108A (en) * | 1985-07-03 | 1987-08-04 | Gte Laboratories Incorporated | Optical multivibrator |
JPS62144426A (ja) * | 1985-12-19 | 1987-06-27 | Matsushita Electric Ind Co Ltd | 光伝送装置 |
JPS63160391A (ja) * | 1986-12-24 | 1988-07-04 | Toshiba Corp | 分布帰還型半導体レ−ザ装置 |
JPH02159781A (ja) * | 1988-12-14 | 1990-06-19 | Toshiba Corp | 光通信装置 |
JP2546388B2 (ja) * | 1989-08-31 | 1996-10-23 | 日本電気株式会社 | 半導体レーザ装置の発振周波数安定化装置 |
JPH06120906A (ja) * | 1992-10-03 | 1994-04-28 | Canon Inc | 光レシーバ、光半導体装置及びそれを用いた光通信方式及び光通信システム |
JPH0795160A (ja) * | 1993-09-20 | 1995-04-07 | Fujitsu Ltd | 光増幅器の応答信号変調方法 |
-
1995
- 1995-04-28 US US08/431,717 patent/US5659560A/en not_active Expired - Fee Related
- 1995-05-09 DE DE69518353T patent/DE69518353T4/de not_active Expired - Lifetime
- 1995-05-09 EP EP95107036A patent/EP0682390B1/de not_active Expired - Lifetime
- 1995-05-09 DE DE69518353A patent/DE69518353D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69518353T4 (de) | 2001-08-02 |
DE69518353D1 (de) | 2000-09-21 |
EP0682390B1 (de) | 2000-08-16 |
US5659560A (en) | 1997-08-19 |
EP0682390A3 (de) | 1996-06-26 |
EP0682390A2 (de) | 1995-11-15 |
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