DE69518353T2 - Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben - Google Patents

Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben

Info

Publication number
DE69518353T2
DE69518353T2 DE69518353T DE69518353T DE69518353T2 DE 69518353 T2 DE69518353 T2 DE 69518353T2 DE 69518353 T DE69518353 T DE 69518353T DE 69518353 T DE69518353 T DE 69518353T DE 69518353 T2 DE69518353 T2 DE 69518353T2
Authority
DE
Germany
Prior art keywords
polarization
controlling
light source
communication system
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69518353T
Other languages
English (en)
Other versions
DE69518353T4 (de
DE69518353D1 (de
Inventor
Toshihiko Ouchi
Masao Majima
Jun Nitta
Seiji Mishima
Ouichi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6122961A external-priority patent/JPH07307527A/ja
Priority claimed from JP13107594A external-priority patent/JP3270626B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69518353T2 publication Critical patent/DE69518353T2/de
Publication of DE69518353T4 publication Critical patent/DE69518353T4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06832—Stabilising during amplitude modulation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687—Stabilising the frequency of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE69518353T 1994-05-12 1995-05-09 Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben Expired - Lifetime DE69518353T4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6122961A JPH07307527A (ja) 1994-05-12 1994-05-12 光半導体装置、光通信用光源の駆動方法、それを用いた光通信方式、及び光通信システム
JP13107594A JP3270626B2 (ja) 1994-05-19 1994-05-19 直接偏波変調光源制御方法及び集積半導体装置の駆動方法

Publications (2)

Publication Number Publication Date
DE69518353T2 true DE69518353T2 (de) 2001-02-15
DE69518353T4 DE69518353T4 (de) 2001-08-02

Family

ID=26459998

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69518353T Expired - Lifetime DE69518353T4 (de) 1994-05-12 1995-05-09 Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben
DE69518353A Expired - Fee Related DE69518353D1 (de) 1994-05-12 1995-05-09 Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69518353A Expired - Fee Related DE69518353D1 (de) 1994-05-12 1995-05-09 Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben

Country Status (3)

Country Link
US (1) US5659560A (de)
EP (1) EP0682390B1 (de)
DE (2) DE69518353T4 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172237A (ja) * 1994-12-17 1996-07-02 Canon Inc 半導体レーザ、その変調方式およびそれを用いた光通信システム
US5764670A (en) * 1995-02-27 1998-06-09 Canon Kabushiki Kaisha Semiconductor laser apparatus requiring no external modulator, method of driving semiconductor laser device, and optical communication system using the semiconductor laser apparatus
US5600126A (en) * 1995-06-20 1997-02-04 Xerox Corporation Method and apparatus for controlling the power output of multiple laser diodes
JP3720514B2 (ja) * 1996-03-19 2005-11-30 キヤノン株式会社 半導体レーザ装置の駆動方法、半導体レーザ装置及び光伝送システム
JP3518837B2 (ja) * 1996-08-22 2004-04-12 キヤノン株式会社 出力光の偏波を切り換えることができる半導体レーザ及び半導体レーザ装置及びその駆動方法
US6868101B1 (en) * 1996-09-13 2005-03-15 Kol Ohr Corporation Low cost means of modulating a laser
JPH1174599A (ja) * 1997-07-01 1999-03-16 Canon Inc 信号伝送用半導体光源装置の駆動方法、信号伝送用光源装置、およびそれを用いた光通信方法および光通信システム
JPH11233898A (ja) * 1997-12-03 1999-08-27 Canon Inc 分布帰還型半導体レーザとその駆動方法
JPH11243256A (ja) * 1997-12-03 1999-09-07 Canon Inc 分布帰還形半導体レーザとその駆動方法
US6222861B1 (en) * 1998-09-03 2001-04-24 Photonic Solutions, Inc. Method and apparatus for controlling the wavelength of a laser
US6175446B1 (en) * 1998-09-23 2001-01-16 Sarnoff Corporation Polarization-independent semiconductor optical amplifier
US6801555B1 (en) * 1999-04-26 2004-10-05 Finisar Corporation Lasing semiconductor optical amplifier with output power monitor and control
JP2001042170A (ja) 1999-07-28 2001-02-16 Canon Inc 光配線装置、その駆動方法およびそれを用いた電子機器
KR100353419B1 (ko) * 2000-03-10 2002-09-18 삼성전자 주식회사 편광 무의존 반도체 광증폭기
JP3817580B2 (ja) * 2000-08-18 2006-09-06 独立行政法人科学技術振興機構 励起子ポラリトン光スイッチ
US7346083B2 (en) * 2001-04-10 2008-03-18 Hrl Laboratories, Llc Bandwidth enhanced self-injection locked DFB laser with narrow linewidth
US20030068125A1 (en) * 2001-09-28 2003-04-10 The Furukawa Electric Co., Ltd. Semiconductor laser device, semiconductor laser module and optical fiber amplifier using the semiconductor laser module
JP4128356B2 (ja) * 2001-12-28 2008-07-30 富士通株式会社 光デバイスの制御装置
US6792171B2 (en) * 2002-11-15 2004-09-14 Jds Uniphase Corporation Receiver optical sub-assembly
JP4359035B2 (ja) 2002-11-21 2009-11-04 富士通株式会社 光中継器
US7630588B2 (en) * 2003-06-25 2009-12-08 Canon Kabushiki Kaisha High frequency electrical signal control device and sensing system
JP4533044B2 (ja) * 2003-08-27 2010-08-25 キヤノン株式会社 センサ
JP4136858B2 (ja) * 2003-09-12 2008-08-20 キヤノン株式会社 位置検出装置、及び情報入力装置
US7885311B2 (en) * 2007-03-27 2011-02-08 Imra America, Inc. Beam stabilized fiber laser
JP4250573B2 (ja) * 2004-07-16 2009-04-08 キヤノン株式会社 素子
JP4546326B2 (ja) * 2004-07-30 2010-09-15 キヤノン株式会社 センシング装置
WO2006047347A1 (en) * 2004-10-22 2006-05-04 Vidiator Enterprises, Inc. System and method for mobile 3d graphical messaging
JP4402026B2 (ja) * 2005-08-30 2010-01-20 キヤノン株式会社 センシング装置
JP4773839B2 (ja) * 2006-02-15 2011-09-14 キヤノン株式会社 対象物の情報を検出する検出装置
JP2007248850A (ja) * 2006-03-16 2007-09-27 Oki Electric Ind Co Ltd マッハツェンダ型半導体素子及びその制御方法
JP4481946B2 (ja) 2006-03-17 2010-06-16 キヤノン株式会社 検出素子及び画像形成装置
JP5132146B2 (ja) * 2006-03-17 2013-01-30 キヤノン株式会社 分析方法、分析装置、及び検体保持部材
JP4898472B2 (ja) 2006-04-11 2012-03-14 キヤノン株式会社 検査装置
JP5196750B2 (ja) 2006-08-25 2013-05-15 キヤノン株式会社 発振素子
US7400661B2 (en) * 2006-11-08 2008-07-15 Lexmark International, Inc. Automatic setting of laser diode bias current
JP4873746B2 (ja) * 2006-12-21 2012-02-08 キヤノン株式会社 発振素子
JP4930173B2 (ja) 2007-04-27 2012-05-16 富士通株式会社 信号光モニタ装置および信号光モニタ方法
JP5105949B2 (ja) * 2007-04-27 2012-12-26 キヤノン株式会社 センサ
JP5144175B2 (ja) * 2007-08-31 2013-02-13 キヤノン株式会社 電磁波を用いる検査装置及び検査方法
JP5665305B2 (ja) * 2008-12-25 2015-02-04 キヤノン株式会社 分析装置
JP5612842B2 (ja) 2009-09-07 2014-10-22 キヤノン株式会社 発振器
JP5424847B2 (ja) 2009-12-11 2014-02-26 キヤノン株式会社 電気機械変換装置
JP5473579B2 (ja) 2009-12-11 2014-04-16 キヤノン株式会社 静電容量型電気機械変換装置の制御装置、及び静電容量型電気機械変換装置の制御方法
JP5414546B2 (ja) 2010-01-12 2014-02-12 キヤノン株式会社 容量検出型の電気機械変換素子
US8606120B2 (en) * 2010-05-28 2013-12-10 Infinera Corporation Control of an interferometric optical polarization beam splitter
JP6435764B2 (ja) * 2014-10-09 2018-12-12 富士通株式会社 光送信器、光変調器の制御方法、及び、光変調器の制御装置
US10411430B1 (en) 2015-04-20 2019-09-10 Aurrion, Inc. Optical system and method for locking a wavelength of a tunable laser
US10074959B2 (en) * 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
KR101864261B1 (ko) * 2016-10-31 2018-06-05 (주)켐옵틱스 파장 가변 레이저의 파장 잠금 구조 및 파장 가변 레이저의 파장 잠금 방법
US10340661B2 (en) * 2017-11-01 2019-07-02 International Business Machines Corporation Electro-optical device with lateral current injection regions
US11095390B2 (en) 2018-08-23 2021-08-17 International Business Machines Corporation Polarization-insensitive optical link
CN110544873B (zh) * 2019-08-29 2020-11-24 厦门市三安集成电路有限公司 分段式调制结构、激光器及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225745A (ja) * 1982-06-24 1983-12-27 Fujitsu Ltd 半導体レ−ザ送信回路
US4685108A (en) * 1985-07-03 1987-08-04 Gte Laboratories Incorporated Optical multivibrator
JPS62144426A (ja) * 1985-12-19 1987-06-27 Matsushita Electric Ind Co Ltd 光伝送装置
JPS63160391A (ja) * 1986-12-24 1988-07-04 Toshiba Corp 分布帰還型半導体レ−ザ装置
JPH02159781A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 光通信装置
JP2546388B2 (ja) * 1989-08-31 1996-10-23 日本電気株式会社 半導体レーザ装置の発振周波数安定化装置
JPH06120906A (ja) * 1992-10-03 1994-04-28 Canon Inc 光レシーバ、光半導体装置及びそれを用いた光通信方式及び光通信システム
JPH0795160A (ja) * 1993-09-20 1995-04-07 Fujitsu Ltd 光増幅器の応答信号変調方法

Also Published As

Publication number Publication date
US5659560A (en) 1997-08-19
EP0682390A2 (de) 1995-11-15
DE69518353T4 (de) 2001-08-02
EP0682390B1 (de) 2000-08-16
DE69518353D1 (de) 2000-09-21
EP0682390A3 (de) 1996-06-26

Similar Documents

Publication Publication Date Title
DE69518353T2 (de) Vorrichtung und Verfahren zur Steuerung einer polarisationsselektiver Lichtquelle, und optisches Kommunikationssystem unter Verwendung desselben
DE69724521D1 (de) Lichtquelle mit variabler Wellenlänge, optisches Kommunikationssystem unter Verwendung desselben, und Verfahren zur Regelung der Wellenlänge desselben
DE69735860D1 (de) Vorrichtung zur Lichtregelung
DE69623802T2 (de) Leistungsabgabevorrichtung, verfahren zur steuerung einer leistungsabgabevorrichtung und antriebssystem mit eingebauter leistungsabgabevorrichtung
DE59510652D1 (de) Verfahren zur Steuerung einer Vorrichtung zur partiellen Dialysatsammlung
DE69529812D1 (de) Verfahren und Vorrichtung zur Regelung einer Kühleinheit
DE69532981D1 (de) Lichtaussendende Vorrichtung fähig zur Auswahl der Polarisationsrichtung, optisches Übertragungssystem und Steuerungsverfahren von Polarisationsmodulation
DE69614602D1 (de) Optische Halbleitervorrichtung, Verfahren zu ihrer Ansteuerung, Verwendung der Vorrichtung als Lichtquelle und optisches Kommunikationssystemes mit einer derartigen Lichtquelle
DE69230258D1 (de) System und verfahren zur steuerung einer kommunikationseinrichtung
DE69613670D1 (de) Vorrichtung und Verfahren zur Steuerung einer Baumaschine
DE19880693D2 (de) Verfahren und Vorrichtung zur Steuerung einer Kupplung
ATA156594A (de) Verfahren und vorrichtung zur steuerung einer kupplung
DE69616668D1 (de) Vorrichtung zur bearbeitung einer glassscheibe
DE69622883T2 (de) Vorrichtung zur durschflusskontrolle einer kühlflüssigkeit
DE69841193D1 (de) Vorrichtung zur Steuerung von Infrarotübertragungen
DE69425675D1 (de) Verfahren und vorrichtung zur steuerung von einem kommunikationsnetz
DE69526404D1 (de) Verfahren und Vorrichtung zur Steuerung einer serienkompensierten Wechselrichteranlage
DE3783179D1 (de) Optische vorrichtung und verfahren zur strahlenkopplung, verwendbar zur steuerung von lichtstrahlen und raeumlichen lichtmodulation.
DE59600930D1 (de) Vorrichtung zur Steuerung einer Ventileinheit
DE69506667T2 (de) Optoelektronische Vorrichtung zur Steuerungshilfe eines Flugzeuges
DE69632291D1 (de) Lichtquelle mit variablen Wellenlänge unter Verwendung eines Lasers, Verfahren zur Wellenlängenregelung, optisches Kommunikationssystem und Verfahren zur optischen Kommunikation
DE59508073D1 (de) Verfahren zur steuerung eines automatischen getriebes
DE59106946D1 (de) Stromquelle und Verfahren zur Steuerung einer Stromquelle.
DE59106878D1 (de) Verfahren zur Steuerung von Positioniersystemen.
DE69711339D1 (de) Verfahren zur steuerung einer numerischen steuereinrichtung