DE69517888D1 - Auffrischungsverfahren und -schaltungen für Doppelbankspeicher - Google Patents
Auffrischungsverfahren und -schaltungen für DoppelbankspeicherInfo
- Publication number
- DE69517888D1 DE69517888D1 DE69517888T DE69517888T DE69517888D1 DE 69517888 D1 DE69517888 D1 DE 69517888D1 DE 69517888 T DE69517888 T DE 69517888T DE 69517888 T DE69517888 T DE 69517888T DE 69517888 D1 DE69517888 D1 DE 69517888D1
- Authority
- DE
- Germany
- Prior art keywords
- circuits
- dual bank
- bank storage
- refreshing
- procedures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/16—Protection against loss of memory contents
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/291,155 US5442588A (en) | 1994-08-16 | 1994-08-16 | Circuits and methods for refreshing a dual bank memory |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69517888D1 true DE69517888D1 (de) | 2000-08-17 |
DE69517888T2 DE69517888T2 (de) | 2001-01-18 |
Family
ID=23119101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69517888T Expired - Fee Related DE69517888T2 (de) | 1994-08-16 | 1995-08-10 | Auffrischungsverfahren und -schaltungen für Doppelbankspeicher |
Country Status (5)
Country | Link |
---|---|
US (1) | US5442588A (de) |
EP (1) | EP0698887B1 (de) |
JP (1) | JP3186534B2 (de) |
KR (1) | KR0176739B1 (de) |
DE (1) | DE69517888T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6301299B1 (en) * | 1994-10-28 | 2001-10-09 | Matsushita Electric Industrial Co., Ltd. | Memory controller for an ATSC video decoder |
JP3647040B2 (ja) * | 1994-11-15 | 2005-05-11 | シラス ロジック,インコーポレイテッド | メモリ素子内の欠陥セルに対処する回路、システム、および方法 |
EP0804785A2 (de) * | 1994-12-06 | 1997-11-05 | Cirrus Logic, Inc. | Schaltungen, systeme und verfahren zur anzeigesteuerung von datenblöcken auf einem bildschirm |
US5701143A (en) * | 1995-01-31 | 1997-12-23 | Cirrus Logic, Inc. | Circuits, systems and methods for improving row select speed in a row select memory device |
US6108015A (en) * | 1995-11-02 | 2000-08-22 | Cirrus Logic, Inc. | Circuits, systems and methods for interfacing processing circuitry with a memory |
US5617555A (en) * | 1995-11-30 | 1997-04-01 | Alliance Semiconductor Corporation | Burst random access memory employing sequenced banks of local tri-state drivers |
JPH09204774A (ja) * | 1995-12-22 | 1997-08-05 | Hitachi Ltd | 半導体メモリ |
US5748968A (en) * | 1996-01-05 | 1998-05-05 | Cirrus Logic, Inc. | Requesting device capable of canceling its memory access requests upon detecting other specific requesting devices simultaneously asserting access requests |
US6504548B2 (en) * | 1998-09-18 | 2003-01-07 | Hitachi, Ltd. | Data processing apparatus having DRAM incorporated therein |
US5881016A (en) * | 1997-06-13 | 1999-03-09 | Cirrus Logic, Inc. | Method and apparatus for optimizing power consumption and memory bandwidth in a video controller using SGRAM and SDRAM power reduction modes |
US5856940A (en) * | 1997-08-15 | 1999-01-05 | Silicon Aquarius, Inc. | Low latency DRAM cell and method therefor |
US6075744A (en) | 1997-10-10 | 2000-06-13 | Rambus Inc. | Dram core refresh with reduced spike current |
JP3247647B2 (ja) * | 1997-12-05 | 2002-01-21 | 株式会社東芝 | 半導体集積回路装置 |
US6442667B1 (en) * | 1998-06-08 | 2002-08-27 | Texas Instruments Incorporated | Selectively powering X Y organized memory banks |
US6222786B1 (en) | 1999-11-02 | 2001-04-24 | Silicon Aquarius, Inc. | Dynamic random access memory with write-without-restore and systems and methods using the same |
JP3745185B2 (ja) | 2000-03-13 | 2006-02-15 | 沖電気工業株式会社 | ダイナミックランダムアクセスメモリ |
US6445636B1 (en) | 2000-08-17 | 2002-09-03 | Micron Technology, Inc. | Method and system for hiding refreshes in a dynamic random access memory |
JP2002351430A (ja) * | 2001-05-30 | 2002-12-06 | Mitsubishi Electric Corp | 表示装置 |
US7290117B2 (en) * | 2001-12-20 | 2007-10-30 | Hewlett-Packard Development Company, L.P. | Memory having increased data-transfer speed and related systems and methods |
US6618314B1 (en) | 2002-03-04 | 2003-09-09 | Cypress Semiconductor Corp. | Method and architecture for reducing the power consumption for memory devices in refresh operations |
US6922350B2 (en) * | 2002-09-27 | 2005-07-26 | Intel Corporation | Reducing the effect of write disturbs in polymer memories |
US7129925B2 (en) * | 2003-04-24 | 2006-10-31 | Hewlett-Packard Development Company, L.P. | Dynamic self-refresh display memory |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5873096A (ja) * | 1981-10-27 | 1983-05-02 | Nec Corp | 半導体メモリ |
JPH069114B2 (ja) * | 1983-06-24 | 1994-02-02 | 株式会社東芝 | 半導体メモリ |
JPS6167154A (ja) * | 1984-09-11 | 1986-04-07 | Fujitsu Ltd | 半導体記憶装置 |
JPS62241198A (ja) * | 1986-04-14 | 1987-10-21 | Hitachi Ltd | ダイナミツク型ram |
US5251177A (en) * | 1989-01-23 | 1993-10-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device having an improved refresh operation |
JPH02260195A (ja) * | 1989-03-30 | 1990-10-22 | Mitsubishi Electric Corp | リフレッシュコントロール回路 |
US5280594A (en) * | 1990-07-25 | 1994-01-18 | Advanced Micro Devices, Inc. | Architecture for high speed contiguous sequential access memories |
US5251178A (en) * | 1991-03-06 | 1993-10-05 | Childers Jimmie D | Low-power integrated circuit memory |
JP2794138B2 (ja) * | 1991-08-13 | 1998-09-03 | 三菱電機株式会社 | 半導体記憶装置 |
JPH05266657A (ja) * | 1992-03-23 | 1993-10-15 | Nec Corp | ダイナミック型半導体メモリ |
-
1994
- 1994-08-16 US US08/291,155 patent/US5442588A/en not_active Expired - Lifetime
-
1995
- 1995-08-10 DE DE69517888T patent/DE69517888T2/de not_active Expired - Fee Related
- 1995-08-10 EP EP95410085A patent/EP0698887B1/de not_active Expired - Lifetime
- 1995-08-14 KR KR1019950024964A patent/KR0176739B1/ko not_active IP Right Cessation
- 1995-08-14 JP JP22700895A patent/JP3186534B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR0176739B1 (ko) | 1999-05-15 |
JP3186534B2 (ja) | 2001-07-11 |
EP0698887A1 (de) | 1996-02-28 |
DE69517888T2 (de) | 2001-01-18 |
JPH08190787A (ja) | 1996-07-23 |
US5442588A (en) | 1995-08-15 |
EP0698887B1 (de) | 2000-07-12 |
KR960008551A (ko) | 1996-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |