DE69510419T2 - Verfahren zum lösen eines werkstückes von einer elektrostatischen halteplatte - Google Patents

Verfahren zum lösen eines werkstückes von einer elektrostatischen halteplatte

Info

Publication number
DE69510419T2
DE69510419T2 DE1995610419 DE69510419T DE69510419T2 DE 69510419 T2 DE69510419 T2 DE 69510419T2 DE 1995610419 DE1995610419 DE 1995610419 DE 69510419 T DE69510419 T DE 69510419T DE 69510419 T2 DE69510419 T2 DE 69510419T2
Authority
DE
Germany
Prior art keywords
detaching
workpiece
holding plate
electrostatic holding
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1995610419
Other languages
English (en)
Other versions
DE69510419D1 (de
Inventor
Manoocher Birang
Grigory Pyatigorsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69510419D1 publication Critical patent/DE69510419D1/de
Publication of DE69510419T2 publication Critical patent/DE69510419T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
DE1995610419 1994-03-07 1995-03-03 Verfahren zum lösen eines werkstückes von einer elektrostatischen halteplatte Expired - Fee Related DE69510419T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/207,331 US5459632A (en) 1994-03-07 1994-03-07 Releasing a workpiece from an electrostatic chuck
PCT/US1995/002511 WO1995024764A1 (en) 1994-03-07 1995-03-03 Releasing a workpiece from an electrostatic chuck

Publications (2)

Publication Number Publication Date
DE69510419D1 DE69510419D1 (de) 1999-07-29
DE69510419T2 true DE69510419T2 (de) 2000-03-02

Family

ID=22770081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1995610419 Expired - Fee Related DE69510419T2 (de) 1994-03-07 1995-03-03 Verfahren zum lösen eines werkstückes von einer elektrostatischen halteplatte

Country Status (6)

Country Link
US (2) US5459632A (de)
EP (1) EP0700593B1 (de)
JP (1) JP3614855B2 (de)
KR (1) KR100329165B1 (de)
DE (1) DE69510419T2 (de)
WO (1) WO1995024764A1 (de)

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JP2000021964A (ja) 1998-07-06 2000-01-21 Ngk Insulators Ltd 静電チャックのパーティクル発生低減方法および半導体製造装置
US6057244A (en) * 1998-07-31 2000-05-02 Applied Materials, Inc. Method for improved sputter etch processing
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US6965506B2 (en) 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US7218503B2 (en) 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US7583492B2 (en) * 1998-09-30 2009-09-01 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6231716B1 (en) * 1998-11-09 2001-05-15 Applied Materials, Inc. Processing chamber with rapid wafer exchange
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US6099697A (en) * 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6538873B1 (en) 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6362946B1 (en) 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
US6567257B2 (en) 2000-04-19 2003-05-20 Applied Materials, Inc. Method and apparatus for conditioning an electrostatic chuck
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
KR100368116B1 (ko) * 2000-08-07 2003-01-15 삼성전자 주식회사 반도체설비의 정전척 구동전원 자동 방전장치
KR100765539B1 (ko) * 2001-05-18 2007-10-10 엘지.필립스 엘시디 주식회사 화학기상 증착장비
US6714033B1 (en) * 2001-07-11 2004-03-30 Lam Research Corporation Probe for direct wafer potential measurements
US6898064B1 (en) * 2001-08-29 2005-05-24 Lsi Logic Corporation System and method for optimizing the electrostatic removal of a workpiece from a chuck
US20030236004A1 (en) * 2002-06-24 2003-12-25 Applied Materials, Inc. Dechucking with N2/O2 plasma
US20040031699A1 (en) * 2002-08-19 2004-02-19 Applied Materials, Inc. Method for performing real time arcing detection
US7541283B2 (en) * 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US8361340B2 (en) * 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7897029B2 (en) * 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7387738B2 (en) 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US20050224722A1 (en) * 2004-03-30 2005-10-13 Applied Materials, Inc. Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
US7030035B2 (en) * 2004-05-14 2006-04-18 Hitachi Global Storage Technologies Netherlands, B.V. Prevention of electrostatic wafer sticking in plasma deposition/etch tools
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
KR101394337B1 (ko) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 정전척
US7508494B2 (en) * 2006-12-22 2009-03-24 Asml Netherlands B.V. Lithographic apparatus and a subtrate table for exciting a shockwave in a substrate
US8149562B2 (en) * 2007-03-09 2012-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. System for decharging a wafer or substrate after dechucking from an electrostatic chuck
US7813103B2 (en) * 2007-10-11 2010-10-12 Applied Materials, Inc. Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
US8454850B2 (en) * 2009-09-02 2013-06-04 Air Products And Chemicals, Inc. Method for the removal of surface oxides by electron attachment
KR20120073226A (ko) * 2009-09-10 2012-07-04 램 리써치 코포레이션 플라즈마 프로세싱 챔버에서 웨이퍼-해제 이벤트를 검출하는 방법 및 장치
US20110060442A1 (en) * 2009-09-10 2011-03-10 Valcore Jr John C Methods and arrangement for detecting a wafer-released event within a plasma processing chamber
US8797705B2 (en) * 2009-09-10 2014-08-05 Lam Research Corporation Methods and arrangement for plasma dechuck optimization based on coupling of plasma signaling to substrate position and potential
TWI493620B (zh) * 2010-06-29 2015-07-21 Global Unichip Corp 調整導線蝕刻機內的靜電吸盤電壓以釋放累積電荷
US8840754B2 (en) * 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
US9123755B2 (en) * 2011-08-30 2015-09-01 Watlow Electric Manufacturing Company System and method for controlling a thermal array
US10069443B2 (en) * 2011-12-20 2018-09-04 Tokyo Electron Limited Dechuck control method and plasma processing apparatus
JP2014075398A (ja) 2012-10-03 2014-04-24 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
US9423359B2 (en) * 2013-06-26 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer charging electromagnetic inspection tool and method of using
JP6424049B2 (ja) * 2014-09-12 2018-11-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
US20170069518A1 (en) * 2015-09-04 2017-03-09 Globalfoundries Inc. Electrostatic substrate holder with non-planar surface and method of etching
JP6505027B2 (ja) 2016-01-04 2019-04-24 株式会社日立ハイテクノロジーズ 試料の離脱方法およびプラズマ処理装置
JP7138418B2 (ja) * 2017-09-04 2022-09-16 東京エレクトロン株式会社 脱離制御方法及びプラズマ処理装置
CN109037109A (zh) * 2018-08-03 2018-12-18 德淮半导体有限公司 一种半导体设备及清洗晶圆的方法
US10546731B1 (en) * 2018-10-05 2020-01-28 Applied Materials, Inc. Method, apparatus and system for wafer dechucking using dynamic voltage sweeping
KR20210006682A (ko) * 2019-07-09 2021-01-19 세메스 주식회사 기판 처리 장치
WO2021037827A1 (en) * 2019-08-28 2021-03-04 Asml Netherlands B.V. Method, apparatus, and system for wafer grounding
US11798833B2 (en) 2020-02-26 2023-10-24 Applied Materials, Inc. Methods of use of a servo control system
US11415230B2 (en) 2020-03-31 2022-08-16 Applied Material, Inc. Slit valve pneumatic control
JP6806281B1 (ja) * 2020-06-15 2021-01-06 日新イオン機器株式会社 ウエハ離脱装置及びウエハ離脱方法
US20220122873A1 (en) * 2020-10-19 2022-04-21 Applied Materials, Inc. Multi-pressure bipolar electrostatic chucking
US11854911B2 (en) 2021-02-25 2023-12-26 Applied Materials, Inc. Methods, systems, and apparatus for conducting chucking operations using an adjusted chucking voltage if a process shift occurs

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JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
JPH06103683B2 (ja) * 1990-08-07 1994-12-14 株式会社東芝 静電吸着方法
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck

Also Published As

Publication number Publication date
US5459632A (en) 1995-10-17
EP0700593A1 (de) 1996-03-13
JPH09502078A (ja) 1997-02-25
EP0700593A4 (de) 1997-07-16
KR100329165B1 (ko) 2002-10-04
WO1995024764A1 (en) 1995-09-14
US5612850A (en) 1997-03-18
EP0700593B1 (de) 1999-06-23
JP3614855B2 (ja) 2005-01-26
DE69510419D1 (de) 1999-07-29

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee