DE69508620D1 - Verfahren und apparat für schnelle wärmebehandlung - Google Patents

Verfahren und apparat für schnelle wärmebehandlung

Info

Publication number
DE69508620D1
DE69508620D1 DE69508620T DE69508620T DE69508620D1 DE 69508620 D1 DE69508620 D1 DE 69508620D1 DE 69508620 T DE69508620 T DE 69508620T DE 69508620 T DE69508620 T DE 69508620T DE 69508620 D1 DE69508620 D1 DE 69508620D1
Authority
DE
Germany
Prior art keywords
heat treatment
fast heat
fast
treatment
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69508620T
Other languages
English (en)
Other versions
DE69508620T2 (de
Inventor
David Camm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mattson Technology Canada Inc
Original Assignee
Vortek Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vortek Industries Ltd filed Critical Vortek Industries Ltd
Application granted granted Critical
Publication of DE69508620D1 publication Critical patent/DE69508620D1/de
Publication of DE69508620T2 publication Critical patent/DE69508620T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
DE69508620T 1994-08-30 1995-08-28 Verfahren und apparat für schnelle wärmebehandlung Expired - Lifetime DE69508620T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/298,163 US5561735A (en) 1994-08-30 1994-08-30 Rapid thermal processing apparatus and method
PCT/CA1995/000503 WO1996007071A1 (en) 1994-08-30 1995-08-28 Rapid thermal processing apparatus and method

Publications (2)

Publication Number Publication Date
DE69508620D1 true DE69508620D1 (de) 1999-04-29
DE69508620T2 DE69508620T2 (de) 1999-12-02

Family

ID=23149331

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508620T Expired - Lifetime DE69508620T2 (de) 1994-08-30 1995-08-28 Verfahren und apparat für schnelle wärmebehandlung

Country Status (6)

Country Link
US (1) US5561735A (de)
EP (1) EP0797753B1 (de)
JP (1) JP4275729B2 (de)
AU (1) AU3250595A (de)
DE (1) DE69508620T2 (de)
WO (1) WO1996007071A1 (de)

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JP2000505961A (ja) * 1996-12-20 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 急速熱処理用炉
US5960158A (en) 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
TW428290B (en) * 1998-03-02 2001-04-01 Steag Rtp Systems Gmbh Heat treatment device for substrate
US5930456A (en) 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
US5970214A (en) 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6174388B1 (en) 1999-03-15 2001-01-16 Lockheed Martin Energy Research Corp. Rapid infrared heating of a surface
US6188836B1 (en) 1999-03-22 2001-02-13 Appliance Development Corporation Portable radiant heater with two reflectors
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
CA2310883A1 (en) 1999-06-07 2000-12-07 Norman L. Arrison Method and apparatus for fracturing brittle materials by thermal stressing
US6912356B2 (en) * 1999-06-07 2005-06-28 Diversified Industries Ltd. Method and apparatus for fracturing brittle materials by thermal stressing
US6246031B1 (en) 1999-11-30 2001-06-12 Wafermasters, Inc. Mini batch furnace
US6345150B1 (en) 1999-11-30 2002-02-05 Wafermasters, Inc. Single wafer annealing oven
US6303906B1 (en) 1999-11-30 2001-10-16 Wafermasters, Inc. Resistively heated single wafer furnace
US6259062B1 (en) 1999-12-03 2001-07-10 Asm America, Inc. Process chamber cooling
SE518582C2 (sv) * 2000-02-18 2002-10-29 Kanthal Ab Värmningsugn i vilken värme överförs genom strålning
DE10058950B4 (de) * 2000-10-17 2006-04-06 Advanced Photonics Technologies Ag Erwärmungsstrecke und Verfahren zum Streckblasen
GB2406709A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
AU2002221405A1 (en) * 2000-12-04 2002-06-18 Vortek Industries Ltd. Heat-treating methods and systems
US6594446B2 (en) * 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6727194B2 (en) * 2002-08-02 2004-04-27 Wafermasters, Inc. Wafer batch processing system and method
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
JP4988202B2 (ja) 2002-12-20 2012-08-01 マトソン テクノロジー カナダ インコーポレイテッド 工作物の支持及び熱処理の方法とシステム
US20050000428A1 (en) * 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
US7115837B2 (en) * 2003-07-28 2006-10-03 Mattson Technology, Inc. Selective reflectivity process chamber with customized wavelength response and method
US7781947B2 (en) * 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
GB0507125D0 (en) * 2005-04-08 2005-05-11 Globe Energy Eco System Ltd Heater
WO2006130573A2 (en) 2005-06-01 2006-12-07 Mattson Technology, Inc. Optimizing the thermal budget during a pulsed heating process
EP2495212A3 (de) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür
WO2007030941A1 (en) * 2005-09-14 2007-03-22 Mattson Technology Canada, Inc. Repeatable heat-treating methods and apparatus
US7133604B1 (en) 2005-10-20 2006-11-07 Bergstein David M Infrared air heater with multiple light sources and reflective enclosure
US8233784B2 (en) * 2006-06-16 2012-07-31 Tempco Electric Heater Corporation Radiant heater
JP5967859B2 (ja) 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
US7763869B2 (en) * 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
CN101702950B (zh) * 2007-05-01 2012-05-30 加拿大马特森技术有限公司 辐照脉冲热处理方法和设备
JP5718809B2 (ja) 2008-05-16 2015-05-13 マトソン テクノロジー、インコーポレイテッド 加工品の破壊を防止する方法および装置
JP5616006B2 (ja) * 2008-06-10 2014-10-29 大日本スクリーン製造株式会社 熱処理装置
JP2010141103A (ja) * 2008-12-11 2010-06-24 Toshiba Corp 半導体装置の製造方法および熱処理装置
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US9117773B2 (en) * 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
JP2011256946A (ja) * 2010-06-09 2011-12-22 Tohoku Univ 減圧処理装置
JP5558985B2 (ja) * 2010-09-16 2014-07-23 大日本スクリーン製造株式会社 熱処理装置
US9279727B2 (en) 2010-10-15 2016-03-08 Mattson Technology, Inc. Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed
EP2683515A4 (de) 2011-03-10 2015-06-03 Mesocoat Inc Verfahren und vorrichtung zum bilden kaschierter metallprodukte
US8404048B2 (en) * 2011-03-11 2013-03-26 Applied Materials, Inc. Off-angled heating of the underside of a substrate using a lamp assembly
US10504719B2 (en) * 2012-04-25 2019-12-10 Applied Materials, Inc. Cooled reflective adapter plate for a deposition chamber
MX2015013236A (es) 2013-03-15 2016-04-04 Mesocoat Inc Polvos de aspersion termica de materiales ceramicos ternarios y metodo de recubrimiento.
DE102015101343A1 (de) * 2015-01-29 2016-08-18 Aixtron Se CVD-Reaktor mit dreidimensional strukturierter Prozesskammerdecke
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US10727094B2 (en) 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool

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US3213827A (en) * 1962-03-13 1965-10-26 Union Carbide Corp Apparatus for gas plating bulk material to metallize the same
US4027185A (en) * 1974-06-13 1977-05-31 Canadian Patents And Development Limited High intensity radiation source
JPS56100412A (en) * 1979-12-17 1981-08-12 Sony Corp Manufacture of semiconductor device
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
JPS5977289A (ja) * 1982-10-26 1984-05-02 ウシオ電機株式会社 光照射炉
US4550684A (en) * 1983-08-11 1985-11-05 Genus, Inc. Cooled optical window for semiconductor wafer heating
US4649261A (en) * 1984-02-28 1987-03-10 Tamarack Scientific Co., Inc. Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
CA1239437A (en) * 1984-12-24 1988-07-19 Vortek Industries Ltd. High intensity radiation method and apparatus having improved liquid vortex flow
FR2594529B1 (fr) * 1986-02-19 1990-01-26 Bertin & Cie Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium
US4755654A (en) * 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
KR0155545B1 (ko) * 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
US4937490A (en) * 1988-12-19 1990-06-26 Vortek Industries Ltd. High intensity radiation apparatus and fluid recirculating system therefor
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
DE69132826T2 (de) * 1990-01-19 2002-08-22 Applied Materials Inc Heizgerät für Halbleiterwafers oder Substrate
US5073698A (en) * 1990-03-23 1991-12-17 Peak Systems, Inc. Method for selectively heating a film on a substrate
JPH04152518A (ja) * 1990-10-16 1992-05-26 Toshiba Corp 半導体装置の製造方法
US5317429A (en) * 1990-11-28 1994-05-31 Fujitsu Limited Trilayer nematic liquid crystal optical switching device
JPH04243123A (ja) * 1991-01-17 1992-08-31 Mitsubishi Electric Corp 半導体製造装置
DE4109956A1 (de) * 1991-03-26 1992-10-01 Siemens Ag Verfahren zum kurzzeittempern einer halbleiterscheibe durch bestrahlung
US5446824A (en) * 1991-10-11 1995-08-29 Texas Instruments Lamp-heated chuck for uniform wafer processing
GB9214380D0 (en) * 1992-07-07 1992-08-19 Sev Furnaces Ltd Radiation transmitting apparatus

Also Published As

Publication number Publication date
EP0797753A1 (de) 1997-10-01
DE69508620T2 (de) 1999-12-02
WO1996007071A1 (en) 1996-03-07
JPH10504936A (ja) 1998-05-12
US5561735A (en) 1996-10-01
AU3250595A (en) 1996-03-22
EP0797753B1 (de) 1999-03-24
JP4275729B2 (ja) 2009-06-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition