DE69501274T2 - Verfahren zur Abscheidung einer keramischen Beschichtung aus der Dampfphase unter Verwendung eines wasserdampfhaltigen Trägergases und nicht-Alkoxy-Silan Precursoren - Google Patents

Verfahren zur Abscheidung einer keramischen Beschichtung aus der Dampfphase unter Verwendung eines wasserdampfhaltigen Trägergases und nicht-Alkoxy-Silan Precursoren

Info

Publication number
DE69501274T2
DE69501274T2 DE69501274T DE69501274T DE69501274T2 DE 69501274 T2 DE69501274 T2 DE 69501274T2 DE 69501274 T DE69501274 T DE 69501274T DE 69501274 T DE69501274 T DE 69501274T DE 69501274 T2 DE69501274 T2 DE 69501274T2
Authority
DE
Germany
Prior art keywords
alkoxy
carrier gas
precursor
deposition
gas containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69501274T
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English (en)
Other versions
DE69501274D1 (de
Inventor
Terence Clark
Richard Cruse
Stephen Rohman
Robert Mininni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enichem SpA
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Enichem SpA
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Filing date
Publication date
Application filed by Enichem SpA filed Critical Enichem SpA
Publication of DE69501274D1 publication Critical patent/DE69501274D1/de
Application granted granted Critical
Publication of DE69501274T2 publication Critical patent/DE69501274T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
DE69501274T 1994-03-07 1995-02-13 Verfahren zur Abscheidung einer keramischen Beschichtung aus der Dampfphase unter Verwendung eines wasserdampfhaltigen Trägergases und nicht-Alkoxy-Silan Precursoren Expired - Fee Related DE69501274T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/206,857 US5424095A (en) 1994-03-07 1994-03-07 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors

Publications (2)

Publication Number Publication Date
DE69501274D1 DE69501274D1 (de) 1998-02-05
DE69501274T2 true DE69501274T2 (de) 1998-04-16

Family

ID=22768265

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69501274T Expired - Fee Related DE69501274T2 (de) 1994-03-07 1995-02-13 Verfahren zur Abscheidung einer keramischen Beschichtung aus der Dampfphase unter Verwendung eines wasserdampfhaltigen Trägergases und nicht-Alkoxy-Silan Precursoren

Country Status (5)

Country Link
US (1) US5424095A (de)
EP (1) EP0671483B1 (de)
AT (1) ATE161589T1 (de)
DE (1) DE69501274T2 (de)
ES (1) ES2111972T3 (de)

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TW416100B (en) * 1997-07-02 2000-12-21 Applied Materials Inc Control of oxygen to silane ratio in a seasoning process to improve particle performance in an HDP-CVD system
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FR2798939B1 (fr) 1999-09-24 2001-11-09 Atofina Reduction du cokage dans les reacteurs de craquage
US6630244B1 (en) * 2001-03-23 2003-10-07 Delavan Inc. Carbon resistant surface coating
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US7446217B2 (en) * 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7579496B2 (en) * 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US7601860B2 (en) * 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
RU2400669C2 (ru) * 2005-03-10 2010-09-27 Шелл Интернэшнл Рисерч Маатсхаппий Б.В. Способ пуска системы непосредственного нагревания (варианты), способ пуска устройства непосредственного нагревания (варианты)
WO2006099047A1 (en) * 2005-03-10 2006-09-21 Shell Internationale Research Maatschappij B.V. A multi-tube heat transfer system for the combustion of a fuel and heating of a process fluid and the use thereof
MX2007010988A (es) * 2005-03-10 2007-09-25 Shell Int Research Sistema de transferencia de calor para la combustion de un combustible y el calentamiento de un fluido de proceso y proceso que utiliza el mismo.
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
BRPI0814093A2 (pt) * 2007-07-20 2015-02-03 Shell Int Research Aquecedor de combustão sem chama
AR067578A1 (es) * 2007-07-20 2009-10-14 Shell Int Research Un calentador de combustion no inflamable, sistema calentador, un metodo para iniciar el sistema calentador y metodo para controlar la temperatura del sistema calentador.
US8057707B2 (en) * 2008-03-17 2011-11-15 Arkems Inc. Compositions to mitigate coke formation in steam cracking of hydrocarbons
CA2724389A1 (en) * 2010-12-08 2012-06-08 Nova Chemicals Corporation In situ removal of iron complexes during cracking
EP2714960B1 (de) * 2011-06-03 2018-02-28 Versum Materials US, LLC Zusammensetzungen und verfahren zur ablagerung von kohlenstoffdotierten siliciumhaltigen filmen
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US20150275355A1 (en) 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
SG11201703195QA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing film
US10703915B2 (en) 2016-09-19 2020-07-07 Versum Materials Us, Llc Compositions and methods for the deposition of silicon oxide films
KR20180034798A (ko) * 2016-09-28 2018-04-05 삼성전자주식회사 유전막 형성 방법 및 반도체 장치의 제조 방법
US10464953B2 (en) 2016-10-14 2019-11-05 Versum Materials Us, Llc Carbon bridged aminosilane compounds for high growth rate silicon-containing films
US11177127B2 (en) * 2017-05-24 2021-11-16 Versum Materials Us, Llc Functionalized cyclosilazanes as precursors for high growth rate silicon-containing films
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
WO2023147382A1 (en) * 2022-01-26 2023-08-03 Versum Materials Us, Llc Halide-functionalized cyclotrisilazanes as precursors for deposition of silicon-containing films

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GB1483144A (en) * 1975-04-07 1977-08-17 British Petroleum Co Protective films
US4923716A (en) * 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
US5208069A (en) * 1991-10-28 1993-05-04 Istituto Guido Donegani S.P.A. Method for passivating the inner surface by deposition of a ceramic coating of an apparatus subject to coking, apparatus prepared thereby, and method of utilizing apparatus prepared thereby
DE4212501C1 (en) * 1992-04-14 1993-08-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Deposition of silicon nitride polymer layer on substrate - using linear or cyclic silazane in gas, giving good quality and high coating ratio

Also Published As

Publication number Publication date
ES2111972T3 (es) 1998-03-16
DE69501274D1 (de) 1998-02-05
EP0671483A1 (de) 1995-09-13
US5424095A (en) 1995-06-13
EP0671483B1 (de) 1997-12-29
ATE161589T1 (de) 1998-01-15

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