DE69430150D1 - Verfahren zur Herstellung einer mit Rippen versehenen Diamant-Wärmesenke - Google Patents

Verfahren zur Herstellung einer mit Rippen versehenen Diamant-Wärmesenke

Info

Publication number
DE69430150D1
DE69430150D1 DE69430150T DE69430150T DE69430150D1 DE 69430150 D1 DE69430150 D1 DE 69430150D1 DE 69430150 T DE69430150 T DE 69430150T DE 69430150 T DE69430150 T DE 69430150T DE 69430150 D1 DE69430150 D1 DE 69430150D1
Authority
DE
Germany
Prior art keywords
finned
making
heat sink
diamond heat
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69430150T
Other languages
English (en)
Other versions
DE69430150T2 (de
Inventor
Yoshiyuki Yamamoto
Takihiro Imai
Takashi Tsuno
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14169193A external-priority patent/JP3518881B2/ja
Priority claimed from JP16209393A external-priority patent/JP3235276B2/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69430150D1 publication Critical patent/DE69430150D1/de
Publication of DE69430150T2 publication Critical patent/DE69430150T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69430150T 1993-06-14 1994-06-14 Verfahren zur Herstellung einer mit Rippen versehenen Diamant-Wärmesenke Expired - Fee Related DE69430150T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14169193A JP3518881B2 (ja) 1993-06-14 1993-06-14 放熱基板
JP16209393A JP3235276B2 (ja) 1993-06-30 1993-06-30 ダイヤモンド放熱基板およびその製造方法

Publications (2)

Publication Number Publication Date
DE69430150D1 true DE69430150D1 (de) 2002-04-18
DE69430150T2 DE69430150T2 (de) 2002-07-18

Family

ID=26473880

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69430024T Expired - Lifetime DE69430024T2 (de) 1993-06-14 1994-06-14 Verfahren zur Herstellung von mit Rippen versehener Diamant-Wärmesenke
DE69430150T Expired - Fee Related DE69430150T2 (de) 1993-06-14 1994-06-14 Verfahren zur Herstellung einer mit Rippen versehenen Diamant-Wärmesenke

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69430024T Expired - Lifetime DE69430024T2 (de) 1993-06-14 1994-06-14 Verfahren zur Herstellung von mit Rippen versehener Diamant-Wärmesenke

Country Status (3)

Country Link
US (2) US5642779A (de)
EP (2) EP1035578B1 (de)
DE (2) DE69430024T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113161307A (zh) * 2021-01-27 2021-07-23 北京科技大学 一种封闭式全金刚石微槽道热沉的制备方法

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19514548C1 (de) * 1995-04-20 1996-10-02 Daimler Benz Ag Verfahren zur Herstellung einer Mikrokühleinrichtung
DE19701680C2 (de) 1997-01-18 2001-08-02 Fraunhofer Ges Forschung Diamantkörper
JP4048579B2 (ja) * 1997-08-28 2008-02-20 住友電気工業株式会社 冷媒流路を含む熱消散体とその製造方法
US6705388B1 (en) * 1997-11-10 2004-03-16 Parker-Hannifin Corporation Non-electrically conductive thermal dissipator for electronic components
TW349194B (en) * 1997-12-26 1999-01-01 Hon Hai Prec Ind Co Ltd Heat sink device and process for producing the same
US5946803A (en) * 1997-12-31 1999-09-07 Hon Hai Precision Ind. Co., Ltd. Method for making heat sink having ultra-thin fins
TW556074B (en) * 1998-12-15 2003-10-01 Foxconn Prec Components Co Ltd Heat sink and the manufacturing method thereof
US6309583B1 (en) * 1999-08-02 2001-10-30 Surface Technology, Inc. Composite coatings for thermal properties
US20010050161A1 (en) * 1999-08-18 2001-12-13 Gregory M. Chrysler Folded fin heat sinks
AU1348901A (en) * 1999-10-28 2001-05-08 P1 Diamond, Inc. Improved diamond thermal management components
AU2001247378A1 (en) * 2000-03-13 2001-09-24 Sun Microsystems, Inc. Method and apparatus for bonding substrates
US6840307B2 (en) * 2000-03-14 2005-01-11 Delphi Technologies, Inc. High performance heat exchange assembly
US6942025B2 (en) * 2000-09-20 2005-09-13 Degree Controls, Inc. Uniform heat dissipating and cooling heat sink
US6390181B1 (en) * 2000-10-04 2002-05-21 David R. Hall Densely finned tungsten carbide and polycrystalline diamond cooling module
US20030183368A1 (en) * 2002-04-02 2003-10-02 Paradis Leo Richard Diamond heat sink
US20030221817A1 (en) * 2002-05-31 2003-12-04 Racksaver, Inc. Rack mountable computer component cooling method and device
US6771502B2 (en) * 2002-06-28 2004-08-03 Advanced Energy Technology Inc. Heat sink made from longer and shorter graphite sheets
US7066469B2 (en) * 2002-08-06 2006-06-27 University of Kentucky Research Foundation Board of Supervisors of Louisiana State University Seal assembly for machinery housing
US20050189647A1 (en) * 2002-10-11 2005-09-01 Chien-Min Sung Carbonaceous composite heat spreader and associated methods
EP1565938A4 (de) 2002-10-11 2006-03-22 Chien-Min Sung KOHLENSTOFFHALTIGER WäRMEVERTEILER UND ENTSPRECHENDE VERFAHREN
US7173334B2 (en) * 2002-10-11 2007-02-06 Chien-Min Sung Diamond composite heat spreader and associated methods
US20060113546A1 (en) * 2002-10-11 2006-06-01 Chien-Min Sung Diamond composite heat spreaders having low thermal mismatch stress and associated methods
CN100345288C (zh) * 2003-06-16 2007-10-24 台达电子工业股份有限公司 散热鳍片及鳍片组件
GB0317854D0 (en) * 2003-07-30 2003-09-03 Element Six Ltd Method of manufacturing diamond substrates
TW200635993A (en) * 2004-12-17 2006-10-16 Solvay Advanced Polymers Llc Semi-crystalline polymer composition and article manufactured therefrom
TW200631144A (en) * 2005-02-18 2006-09-01 Mitac Technology Corp Chip heat dissipation structure and manufacturing method thereof
TWI299976B (en) * 2005-03-02 2008-08-11 Mitac Technology Corp Air blown chip heat dissipation device and manufacturing method thereof
TWI290012B (en) * 2005-03-03 2007-11-11 Mitac Technology Corp Printed circuit board structure and manufacturing method thereof
TW200634140A (en) * 2005-03-21 2006-10-01 Mitac Technology Corp Heat conduction interface structure and manufacturing process method thereof
US20070121299A1 (en) * 2005-11-30 2007-05-31 International Business Machines Corporation Heat transfer apparatus, cooled electronic module and methods of fabrication thereof employing thermally conductive composite fins
US20070199678A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Surface Coating Film Structure on Heat Dissipation Metal and Manufacturing Method Thereof
US20070201203A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Adhesion Material Structure and Process Method Thereof
US20070199677A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Heat Sink Fin Structure and Manufacturing Method Thereof
US20070199679A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Chip Heat Dissipation System and Manufacturing Method and Structure of Heat Dissipation Device Thereof
US20070199681A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Dissipation Heat Pipe Structure and Manufacturing Method Thereof
US20070201207A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Chip Heat Dissipation System and Structure of Heat Exchange Device and Manufacturing Method Thereof
US20070199682A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Dissipation Heat Pipe Structure and Manufacturing Method Thereof
US7550841B2 (en) * 2006-03-23 2009-06-23 Intel Corporation Methods of forming a diamond micro-channel structure and resulting devices
US7791188B2 (en) 2007-06-18 2010-09-07 Chien-Min Sung Heat spreader having single layer of diamond particles and associated methods
US20110044004A1 (en) * 2009-08-18 2011-02-24 Garosshen Thomas J Heat transfer apparatus having a thermal interface material
TWI464839B (zh) 2010-09-21 2014-12-11 Ritedia Corp 單層鑽石顆粒散熱器及其相關方法
US9006086B2 (en) 2010-09-21 2015-04-14 Chien-Min Sung Stress regulated semiconductor devices and associated methods
US8778784B2 (en) 2010-09-21 2014-07-15 Ritedia Corporation Stress regulated semiconductor devices and associated methods
FR2965699B1 (fr) * 2010-10-05 2013-03-29 Commissariat Energie Atomique Dispositif pour la dissipation thermique destine a au moins un composant electronique et procede correspondant
CN103839836B (zh) * 2012-11-22 2018-04-27 大陆汽车投资（上海）有限公司 散热衬底的制造方法
US20150219410A1 (en) * 2014-01-31 2015-08-06 Asia Vital Components Co., Ltd. Heat Dissipation Structure Enhancing Heat Source Self Heat Radiation
RU2589942C1 (ru) * 2015-06-30 2016-07-10 Общество С Ограниченной Ответственностью "Твинн" Теплоотвод (варианты)
GB201621690D0 (en) * 2016-12-20 2017-02-01 Element Six Tech Ltd A heat sink comprising synthetic diamond material
GB201701173D0 (en) 2017-01-24 2017-03-08 Element Six Tech Ltd Synthetic diamond plates
GB201918883D0 (en) * 2019-12-19 2020-02-05 Element Six Tech Ltd Method for producing chemical vapour deposition diamond
EP3872845A1 (de) * 2020-02-28 2021-09-01 Siemens Aktiengesellschaft Verfahren zur herstellung einer leistungsmoduleinheit
US11313631B2 (en) * 2020-07-07 2022-04-26 Hfc Industry Limited Composite heat sink having anisotropic heat transfer metal-graphite composite fins
CN113146158B (zh) * 2021-01-27 2021-12-24 北京科技大学 一种开放式全金刚石散热结构的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6903862A (de) * 1969-03-13 1970-09-15
IL39936A (en) * 1971-07-30 1975-04-25 De Beers Ind Diamond A diamond particle particularly for use in heat sinks
JPS57196552A (en) * 1981-05-27 1982-12-02 Nec Corp Radiator
GB8328474D0 (en) * 1983-10-25 1983-11-23 Plessey Co Plc Diamond heatsink assemblies
JPS60126853A (ja) * 1983-12-14 1985-07-06 Hitachi Ltd 半導体デバイス冷却装置
US4748538A (en) * 1985-07-08 1988-05-31 Nec Corporation Semiconductor module
US4964458A (en) * 1986-04-30 1990-10-23 International Business Machines Corporation Flexible finned heat exchanger
US5008737A (en) * 1988-10-11 1991-04-16 Amoco Corporation Diamond composite heat sink for use with semiconductor devices
US5038858A (en) * 1990-03-13 1991-08-13 Thermalloy Incorporated Finned heat sink and method of manufacture
JPH04362096A (ja) * 1991-06-06 1992-12-15 Toshiba Corp 伝熱フィンの製造方法
GB2256526B (en) * 1991-06-07 1994-12-14 De Beers Ind Diamond Heat sinks

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113161307A (zh) * 2021-01-27 2021-07-23 北京科技大学 一种封闭式全金刚石微槽道热沉的制备方法
CN113161307B (zh) * 2021-01-27 2021-12-31 北京科技大学 一种封闭式全金刚石微槽道热沉的制备方法

Also Published As

Publication number Publication date
DE69430150T2 (de) 2002-07-18
EP0630045B1 (de) 2002-03-06
DE69430024T2 (de) 2002-08-22
US5791045A (en) 1998-08-11
EP1035578A1 (de) 2000-09-13
DE69430024D1 (de) 2002-04-11
EP0630045A1 (de) 1994-12-21
EP1035578B1 (de) 2002-03-13
US5642779A (en) 1997-07-01

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee