DE69420565D1 - Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor - Google Patents
Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem LeistungstransistorInfo
- Publication number
- DE69420565D1 DE69420565D1 DE69420565T DE69420565T DE69420565D1 DE 69420565 D1 DE69420565 D1 DE 69420565D1 DE 69420565 T DE69420565 T DE 69420565T DE 69420565 T DE69420565 T DE 69420565T DE 69420565 D1 DE69420565 D1 DE 69420565D1
- Authority
- DE
- Germany
- Prior art keywords
- driver circuit
- power transistor
- semiconductor components
- electronic semiconductor
- electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94830505A EP0709890B1 (de) | 1994-10-27 | 1994-10-27 | Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69420565D1 true DE69420565D1 (de) | 1999-10-14 |
DE69420565T2 DE69420565T2 (de) | 2000-03-30 |
Family
ID=8218558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69420565T Expired - Fee Related DE69420565T2 (de) | 1994-10-27 | 1994-10-27 | Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor |
Country Status (4)
Country | Link |
---|---|
US (2) | US5708290A (de) |
EP (1) | EP0709890B1 (de) |
JP (1) | JPH08274183A (de) |
DE (1) | DE69420565T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112289787A (zh) * | 2020-09-17 | 2021-01-29 | 南京通华芯微电子有限公司 | 一种具有多种控制功能的mos器件 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5896313A (en) * | 1997-06-02 | 1999-04-20 | Micron Technology, Inc. | Vertical bipolar SRAM cell, array and system, and a method of making the cell and the array |
DE19752848C2 (de) * | 1997-11-28 | 2003-12-24 | Infineon Technologies Ag | Elektrisch entkoppelter Feldeffekt-Transistor in Dreifach-Wanne und Verwendung desselben |
IT1298516B1 (it) * | 1998-01-30 | 2000-01-12 | Sgs Thomson Microelectronics | Dispositivo elettronico di potenza integrato su un materiale semiconduttore e relativo processo di fabricazione |
US6495423B1 (en) | 1999-08-26 | 2002-12-17 | Stmicroelectronics S.R.L. | Electronic power device monolithically integrated on a semiconductor and comprising edge protection structures having a limited planar dimension |
US6451655B1 (en) | 1999-08-26 | 2002-09-17 | Stmicroelectronics S.R.L. | Electronic power device monolithically integrated on a semiconductor and comprising a first power region and at least a second region as well as an isolation structure of limited planar dimension |
US6245609B1 (en) * | 1999-09-27 | 2001-06-12 | Taiwan Semiconductor Manufacturing Company | High voltage transistor using P+ buried layer |
JP2002324846A (ja) * | 2001-04-25 | 2002-11-08 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
JP2003258119A (ja) * | 2002-03-07 | 2003-09-12 | Seiko Epson Corp | 半導体装置の製造方法 |
US6661042B2 (en) * | 2002-03-11 | 2003-12-09 | Monolithic System Technology, Inc. | One-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region |
US6686624B2 (en) | 2002-03-11 | 2004-02-03 | Monolithic System Technology, Inc. | Vertical one-transistor floating-body DRAM cell in bulk CMOS process with electrically isolated charge storage region |
US6946720B2 (en) * | 2003-02-13 | 2005-09-20 | Intersil Americas Inc. | Bipolar transistor for an integrated circuit having variable value emitter ballast resistors |
JP2006013450A (ja) * | 2004-05-27 | 2006-01-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4890838B2 (ja) * | 2005-11-17 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路のレイアウト設計方法、及びレイアウト設計ツール |
JP2008042013A (ja) * | 2006-08-08 | 2008-02-21 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP5119626B2 (ja) * | 2006-08-18 | 2013-01-16 | 富士通セミコンダクター株式会社 | 電気ヒューズ回路 |
US9029750B1 (en) * | 2011-08-02 | 2015-05-12 | Northrop Grumman Systems Corporation | CMOS and CCD sensor R/O with high gain and no kTC noise |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0618255B2 (ja) * | 1984-04-04 | 1994-03-09 | 株式会社東芝 | 半導体装置 |
JPS63198367A (ja) * | 1987-02-13 | 1988-08-17 | Toshiba Corp | 半導体装置 |
IT1221587B (it) * | 1987-09-07 | 1990-07-12 | S G S Microelettronics Spa | Procedimento di fabbricazione di un dispositivo integrato monolitico a semiconduttore avente strati epitas siali a bassa concentrazione di impurita' |
US5512774A (en) * | 1988-02-08 | 1996-04-30 | Kabushiki Kaisha Toshiba | Dielectrically isolated substrate and semiconductor device using the same |
IT1228900B (it) * | 1989-02-27 | 1991-07-09 | Sgs Thomson Microelectronics | Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. |
JPH07109861B2 (ja) * | 1990-01-19 | 1995-11-22 | 株式会社東芝 | 電荷転送デバイスを含む半導体装置およびその製造方法 |
JP3216206B2 (ja) * | 1992-03-30 | 2001-10-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
-
1994
- 1994-10-27 DE DE69420565T patent/DE69420565T2/de not_active Expired - Fee Related
- 1994-10-27 EP EP94830505A patent/EP0709890B1/de not_active Expired - Lifetime
-
1995
- 1995-10-27 US US08/549,599 patent/US5708290A/en not_active Expired - Lifetime
- 1995-10-27 JP JP7280502A patent/JPH08274183A/ja active Pending
-
1997
- 1997-08-25 US US08/929,349 patent/US6033947A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112289787A (zh) * | 2020-09-17 | 2021-01-29 | 南京通华芯微电子有限公司 | 一种具有多种控制功能的mos器件 |
CN112289787B (zh) * | 2020-09-17 | 2024-01-26 | 南京通华芯微电子有限公司 | 一种具有多种控制功能的mos器件 |
Also Published As
Publication number | Publication date |
---|---|
US6033947A (en) | 2000-03-07 |
JPH08274183A (ja) | 1996-10-18 |
DE69420565T2 (de) | 2000-03-30 |
EP0709890A1 (de) | 1996-05-01 |
US5708290A (en) | 1998-01-13 |
EP0709890B1 (de) | 1999-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |