DE69418037D1 - Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau - Google Patents

Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau

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Publication number
DE69418037D1
DE69418037D1 DE69418037T DE69418037T DE69418037D1 DE 69418037 D1 DE69418037 D1 DE 69418037D1 DE 69418037 T DE69418037 T DE 69418037T DE 69418037 T DE69418037 T DE 69418037T DE 69418037 D1 DE69418037 D1 DE 69418037D1
Authority
DE
Germany
Prior art keywords
semiconductor device
power semiconductor
housing structure
device made
mos technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418037T
Other languages
English (en)
Other versions
DE69418037T2 (de
Inventor
Giuseppe Ferla
Ferruccio Frisina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Publication of DE69418037D1 publication Critical patent/DE69418037D1/de
Application granted granted Critical
Publication of DE69418037T2 publication Critical patent/DE69418037T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69418037T 1994-08-02 1994-08-02 Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau Expired - Fee Related DE69418037T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830394A EP0697728B1 (de) 1994-08-02 1994-08-02 Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau

Publications (2)

Publication Number Publication Date
DE69418037D1 true DE69418037D1 (de) 1999-05-27
DE69418037T2 DE69418037T2 (de) 1999-08-26

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DE69418037T Expired - Fee Related DE69418037T2 (de) 1994-08-02 1994-08-02 Leistungshalbleitervorrichtung aus MOS-Technology-Chips und Gehäuseaufbau

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Country Link
US (2) US5631476A (de)
EP (1) EP0697728B1 (de)
JP (1) JP2987088B2 (de)
DE (1) DE69418037T2 (de)

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US5751470A (en) * 1996-03-12 1998-05-12 Lexmark International, Inc. Method for enhanced print quality on print engines with at least one high resolution dimension
US6249041B1 (en) * 1998-06-02 2001-06-19 Siliconix Incorporated IC chip package with directly connected leads
US6476480B1 (en) * 2000-07-10 2002-11-05 Delphi Technologies, Inc. Press-fit IC power package and method therefor
US6649975B2 (en) 2000-11-16 2003-11-18 Silicon Semiconductor Corporation Vertical power devices having trench-based electrodes therein
DE102004036905A1 (de) * 2004-07-29 2006-03-23 Infineon Technologies Ag Vertikales Leistungshalbleiterbauteil mit einem Halbleiterchip und Verfahren zur Herstellung desselben
DE102006012781B4 (de) * 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
JP5390064B2 (ja) 2006-08-30 2014-01-15 ルネサスエレクトロニクス株式会社 半導体装置
CN101958302B (zh) * 2010-09-04 2012-04-11 江苏长电科技股份有限公司 双面图形芯片倒装单颗封装结构及其封装方法
JP5448110B2 (ja) * 2012-03-12 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置
GB2506141A (en) * 2012-09-21 2014-03-26 Rolls Royce Plc Distributed power semiconductor device
ITUB20153275A1 (it) 2015-08-28 2017-02-28 St Microelectronics Srl Dispositivo a transistor di potenza e relativo procedimento di protezione
CN109599489A (zh) * 2018-10-12 2019-04-09 复旦大学 基于mems工艺的高q值三维螺旋结构电感及其制作方法

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL136562C (de) * 1963-10-24
GB1226080A (de) * 1967-11-28 1971-03-24
US3831067A (en) * 1972-05-15 1974-08-20 Int Rectifier Corp Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring
US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
US4008486A (en) * 1975-06-02 1977-02-15 International Rectifier Corporation Compression-assembled semiconductor device with nesting circular flanges and flexible locating ring
US4070490A (en) * 1976-03-09 1978-01-24 General Foods Corporation Liver-like pet food
US4070690A (en) * 1976-08-17 1978-01-24 Westinghouse Electric Corporation VMOS transistor
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
DK157272C (da) * 1978-10-13 1990-04-30 Int Rectifier Corp Mosfet med hoej effekt
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4329642A (en) * 1979-03-09 1982-05-11 Siliconix, Incorporated Carrier and test socket for leadless integrated circuit
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4305087A (en) * 1979-06-29 1981-12-08 International Rectifier Corporation Stud-mounted pressure assembled semiconductor device
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
US4414560A (en) * 1980-11-17 1983-11-08 International Rectifier Corporation Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region
US4399449A (en) * 1980-11-17 1983-08-16 International Rectifier Corporation Composite metal and polysilicon field plate structure for high voltage semiconductor devices
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4642419A (en) * 1981-04-06 1987-02-10 International Rectifier Corporation Four-leaded dual in-line package module for semiconductor devices
FR2523745B1 (fr) * 1982-03-18 1987-06-26 Bull Sa Procede et dispositif de protection d'un logiciel livre par un fournisseur a un utilisateur
US4556896A (en) * 1982-08-30 1985-12-03 International Rectifier Corporation Lead frame structure
US4641418A (en) * 1982-08-30 1987-02-10 International Rectifier Corporation Molding process for semiconductor devices and lead frame structure therefor
US4638553A (en) * 1982-12-08 1987-01-27 International Rectifier Corporation Method of manufacture of semiconductor device
US4878099A (en) * 1982-12-08 1989-10-31 International Rectifier Corporation Metallizing system for semiconductor wafers
US4965173A (en) * 1982-12-08 1990-10-23 International Rectifier Corporation Metallizing process and structure for semiconductor devices
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4663820A (en) * 1984-06-11 1987-05-12 International Rectifier Corporation Metallizing process for semiconductor devices
JPH0758782B2 (ja) * 1986-03-19 1995-06-21 株式会社東芝 半導体装置
US4853762A (en) * 1986-03-27 1989-08-01 International Rectifier Corporation Semi-conductor modules
US4794431A (en) * 1986-04-21 1988-12-27 International Rectifier Corporation Package for photoactivated semiconductor device
KR960013630B1 (ko) * 1986-06-30 1996-10-10 페어차일드 세미콘덕터 코퍼레이션 집적회로에서의 접지 변동 감소 장치
US4845545A (en) * 1987-02-13 1989-07-04 International Rectifier Corporation Low profile semiconductor package
JPS63213968A (ja) * 1987-03-03 1988-09-06 Mitsubishi Electric Corp 半導体装置
US5256893A (en) * 1987-07-22 1993-10-26 Hitachi, Ltd. Semiconductor integrated circuit device with power MOSFET incorporated
JPH07114279B2 (ja) * 1988-01-06 1995-12-06 株式会社東芝 半導体装置
US5283201A (en) * 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
JPH01292862A (ja) * 1988-05-20 1989-11-27 Toshiba Corp 半導体装置
JPH02163247A (ja) * 1988-12-14 1990-06-22 Mitsubishi Electric Corp ファクシミリ装置
US5047833A (en) * 1990-10-17 1991-09-10 International Rectifier Corporation Solderable front metal contact for MOS devices
EP0526656B1 (de) * 1991-02-25 1996-01-10 Sumitomo Electric Industries, Ltd. Leiterplatte
JP2864841B2 (ja) * 1992-02-04 1999-03-08 三菱電機株式会社 高周波高出力トランジスタ
FR2697674B1 (fr) * 1992-10-29 1995-01-13 Sgs Thomson Microelectronics Thyristor et assemblage de thyristors à cathode commune.
US5338974A (en) * 1993-03-17 1994-08-16 Spectrian, Inc. RF power transistor package

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EP0697728B1 (de) 1999-04-21
JPH08213614A (ja) 1996-08-20
JP2987088B2 (ja) 1999-12-06
EP0697728A1 (de) 1996-02-21
US5851855A (en) 1998-12-22
DE69418037T2 (de) 1999-08-26

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