DE69414333T2 - Halbleiteranordnung mit einem nichtflüchtigen Speicher und Herstellungsmethode - Google Patents

Halbleiteranordnung mit einem nichtflüchtigen Speicher und Herstellungsmethode

Info

Publication number
DE69414333T2
DE69414333T2 DE69414333T DE69414333T DE69414333T2 DE 69414333 T2 DE69414333 T2 DE 69414333T2 DE 69414333 T DE69414333 T DE 69414333T DE 69414333 T DE69414333 T DE 69414333T DE 69414333 T2 DE69414333 T2 DE 69414333T2
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
volatile memory
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69414333T
Other languages
English (en)
Other versions
DE69414333D1 (de
Inventor
Andrew Jan Walker
Roger Cuppens
Alwin Nils Kroenert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69414333D1 publication Critical patent/DE69414333D1/de
Application granted granted Critical
Publication of DE69414333T2 publication Critical patent/DE69414333T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69414333T 1993-09-06 1994-08-31 Halbleiteranordnung mit einem nichtflüchtigen Speicher und Herstellungsmethode Expired - Fee Related DE69414333T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9300912A BE1007475A3 (nl) 1993-09-06 1993-09-06 Halfgeleiderinrichting met een niet-vluchtig geheugen en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
DE69414333D1 DE69414333D1 (de) 1998-12-10
DE69414333T2 true DE69414333T2 (de) 1999-05-20

Family

ID=3887305

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69414333T Expired - Fee Related DE69414333T2 (de) 1993-09-06 1994-08-31 Halbleiteranordnung mit einem nichtflüchtigen Speicher und Herstellungsmethode

Country Status (6)

Country Link
US (1) US5895950A (de)
EP (1) EP0642172B1 (de)
JP (1) JPH0794613A (de)
BE (1) BE1007475A3 (de)
DE (1) DE69414333T2 (de)
TW (1) TW287318B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997002605A1 (en) * 1995-07-03 1997-01-23 Jeewika Chandanie Ranaweera Method of fabricating a fast programming flash e2prom cell
US6492215B1 (en) 1997-08-13 2002-12-10 Citizen Watch Co., Ltd. Semiconductor device and fabricating the same
US6069382A (en) * 1998-02-11 2000-05-30 Cypress Semiconductor Corp. Non-volatile memory cell having a high coupling ratio
KR100418718B1 (ko) * 2000-06-29 2004-02-14 주식회사 하이닉스반도체 플래쉬 메모리 셀의 소거 방법
US6861689B2 (en) * 2002-11-08 2005-03-01 Freescale Semiconductor, Inc. One transistor DRAM cell structure and method for forming
US7166876B2 (en) * 2004-04-28 2007-01-23 Taiwan Semiconductor Manufacturing Company, Ltd. MOSFET with electrostatic discharge protection structure and method of fabrication
JP2008060466A (ja) * 2006-09-01 2008-03-13 Denso Corp 不揮発性半導体記憶装置、そのデータ消去方法、その消去判定方法
JP5476665B2 (ja) * 2007-04-02 2014-04-23 株式会社デンソー 不揮発性半導体記憶装置及びそのデータ書き換え方法
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP6088142B2 (ja) * 2012-01-18 2017-03-01 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
NL191683C (nl) * 1977-02-21 1996-02-05 Zaidan Hojin Handotai Kenkyu Halfgeleidergeheugenschakeling.
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
EP0021777B1 (de) * 1979-06-18 1983-10-19 Fujitsu Limited Nicht-flüchtige Halbleiter-Speichervorrichtung
US4503524A (en) * 1980-06-02 1985-03-05 Texas Instruments Incorporated Electrically erasable dual-injector floating gate programmable memory device
JPS5974677A (ja) * 1982-10-22 1984-04-27 Ricoh Co Ltd 半導体装置及びその製造方法
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS63249375A (ja) * 1987-04-06 1988-10-17 Oki Electric Ind Co Ltd 半導体記憶装置のデ−タ消去方法
US4958321A (en) * 1988-09-22 1990-09-18 Advanced Micro Devices, Inc. One transistor flash EPROM cell
KR940010930B1 (ko) * 1990-03-13 1994-11-19 가부시키가이샤 도시바 반도체장치의 제조방법
JPH05110114A (ja) * 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JP3124101B2 (ja) * 1992-01-30 2001-01-15 ローム株式会社 不揮発性半導体記憶装置およびその製造方法
TW220007B (de) * 1992-03-12 1994-02-01 Philips Nv
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
JP3152749B2 (ja) * 1992-06-15 2001-04-03 株式会社東芝 半導体装置の製造方法
JPH065872A (ja) * 1992-06-18 1994-01-14 Nec Corp 不揮発性半導体記憶装置の製造方法
JP3433808B2 (ja) * 1992-08-05 2003-08-04 株式会社日立製作所 半導体集積回路装置
US5426769A (en) * 1993-08-26 1995-06-20 Metalink Corp. System and method for producing input/output expansion for single chip microcomputers
US5457652A (en) * 1994-04-01 1995-10-10 National Semiconductor Corporation Low voltage EEPROM

Also Published As

Publication number Publication date
DE69414333D1 (de) 1998-12-10
EP0642172A1 (de) 1995-03-08
JPH0794613A (ja) 1995-04-07
EP0642172B1 (de) 1998-11-04
TW287318B (de) 1996-10-01
US5895950A (en) 1999-04-20
BE1007475A3 (nl) 1995-07-11

Similar Documents

Publication Publication Date Title
KR900702578A (ko) 불휘발성 반도체 메모리 및 그 제조방법
GB2251123B (en) Nonvolatile semiconductor memory device and the manufacturing method therefor
GB2235088B (en) Nonvolatile semiconductor memory device and manufacturing method thereof
DE69021419D1 (de) Halbleiterspeicheranordnung mit einem ferroelektrischen Material.
DE69129401T2 (de) Halbleiterspeichervorrichtung mit einem grossen Speicher und einem Hochgeschwindigkeitsspeicher
DE69418522T2 (de) Nichtflüchtige Halbleiterspeicheranordnung mit Nachprüfungsfunktion
EP0655785A3 (de) Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung.
DE69325001T2 (de) Nicht flüchtige Speicheranordnung und ihr Herstellungsverfahren
DE69430341T2 (de) Halbleiteranordnung mit schmallem Träger und Herstellungsverfahren
DE69428418T2 (de) Halbleiterspeichergerät mit einem Ersatzspeicherzellfeld
DE69429140D1 (de) Nichtflüchtige Halbleiterspeicheranordnung und Datenprogrammierverfahren
EP0656663A3 (de) Nichtflüssige-Halbleiterspeicheranordnung und Verfahren zur Löschung und Herstellung.
DE69230773T2 (de) Datenverarbeitungseinrichtung mit fortschreitend programmierbarem nichtflüchtigen Speicher und Verfahren dazu
FR2725309B1 (fr) Dispositif memoire non volatile a semi-conducteurs et procede de fabrication de celui-ci
DE69321685D1 (de) Datenlöschverfahren in einem nicht-flüchtigen Halbleiterspeicher
EP0609829A3 (de) Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung.
DE69414333T2 (de) Halbleiteranordnung mit einem nichtflüchtigen Speicher und Herstellungsmethode
DE69325278T2 (de) Nichtflüchtige, elektrisch programmierbare Halbleiterspeicheranordnung mit einem Spannungsregler
DE69329139T2 (de) Halbleitervorrichtung mit einem programmierbaren Element
KR900012281A (ko) 불휘발성 반도체메모리와 그 제조방법
EP0518000A3 (en) Non-volatile semiconductor memory device and method for manufacturing the same
DE69231233D1 (de) Halbleiterspeicheranordnung mit einem Dünnschichttransistor und Herstellungsmethode für selben
GB2262657B (en) Semiconductor memory device and a manufacturing method therefor
DE69229842T2 (de) Halbleiterspeicheranordnung mit einem Dünnschichttransistor und Herstellungsmethode für selben
DE69518970D1 (de) Nichtflüchtiger Speicher und dessen Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee