DE69405147D1 - Photodetektor mit einem Resonanzhohlraum - Google Patents

Photodetektor mit einem Resonanzhohlraum

Info

Publication number
DE69405147D1
DE69405147D1 DE69405147T DE69405147T DE69405147D1 DE 69405147 D1 DE69405147 D1 DE 69405147D1 DE 69405147 T DE69405147 T DE 69405147T DE 69405147 T DE69405147 T DE 69405147T DE 69405147 D1 DE69405147 D1 DE 69405147D1
Authority
DE
Germany
Prior art keywords
photodetector
resonance cavity
resonance
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405147T
Other languages
English (en)
Other versions
DE69405147T2 (de
Inventor
Neil Edmund James Hunt
Erdmann Frederick Schubert
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69405147D1 publication Critical patent/DE69405147D1/de
Application granted granted Critical
Publication of DE69405147T2 publication Critical patent/DE69405147T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/12—Generating the spectrum; Monochromators
    • G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69405147T 1993-04-30 1994-04-13 Photodetektor mit einem Resonanzhohlraum Expired - Fee Related DE69405147T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/054,947 US5315128A (en) 1993-04-30 1993-04-30 Photodetector with a resonant cavity

Publications (2)

Publication Number Publication Date
DE69405147D1 true DE69405147D1 (de) 1997-10-02
DE69405147T2 DE69405147T2 (de) 1998-03-26

Family

ID=21994557

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69405147T Expired - Fee Related DE69405147T2 (de) 1993-04-30 1994-04-13 Photodetektor mit einem Resonanzhohlraum

Country Status (6)

Country Link
US (1) US5315128A (de)
EP (1) EP0622857B1 (de)
JP (1) JP2894950B2 (de)
KR (1) KR100335709B1 (de)
CA (1) CA2116257C (de)
DE (1) DE69405147T2 (de)

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FI98325C (fi) * 1994-07-07 1997-05-26 Vaisala Oy Selektiivinen infrapunadetektori
GB9511336D0 (en) * 1995-06-05 1995-08-02 Secr Defence Reflecting semiconductor substrates
US6074892A (en) 1996-05-07 2000-06-13 Ciena Corporation Semiconductor hetero-interface photodetector
FR2757684B1 (fr) * 1996-12-20 1999-03-26 Thomson Csf Detecteur infrarouge a structure quantique, non refroidie
JP3456143B2 (ja) * 1998-05-01 2003-10-14 信越半導体株式会社 積層材料および光機能素子
US6380531B1 (en) * 1998-12-04 2002-04-30 The Board Of Trustees Of The Leland Stanford Junior University Wavelength tunable narrow linewidth resonant cavity light detectors
US6133571A (en) * 1999-04-26 2000-10-17 Lockheed Martin Corporation Resonant cavity field enhancing boundary
AU6046600A (en) * 1999-05-06 2000-11-21 Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
US6252251B1 (en) 1999-06-09 2001-06-26 Lucent Technologies Inc. Raised photodetector with recessed light responsive region
AU2917301A (en) * 1999-10-25 2001-05-08 Quantum Vision, Inc. Resonant microcavity display utilizing mirrors exhibiting anomalous phase dispersion
US6603605B1 (en) * 1999-11-05 2003-08-05 Interuniversitair Microelektronica Centrum (Imec, Vzw) System for guiding a beam of electromagnetic radiation
US6392257B1 (en) * 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6925256B1 (en) * 2000-02-18 2005-08-02 Diplex Optical discriminator for transmitting and receiving in both optical fiber and free space applications
FR2811139B1 (fr) * 2000-06-29 2003-10-17 Centre Nat Rech Scient Dispositif optoelectronique a filtrage de longueur d'onde integre
US6452187B1 (en) 2000-08-24 2002-09-17 Lockheed Martin Corporation Two-color grating coupled infrared photodetector
US6828642B2 (en) * 2001-04-17 2004-12-07 Lockhead Martin Corporation Diffraction grating coupled infrared photodetector
US20020158265A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating high contrast reflective mirrors
US20020158245A1 (en) * 2001-04-26 2002-10-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing binary metal oxide layers
US20030012965A1 (en) * 2001-07-10 2003-01-16 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate comprising an oxygen-doped compound semiconductor layer
US6920290B2 (en) * 2001-07-11 2005-07-19 Lockheed Martin Corporation Multi-wavelength high bandwidth communication receiver and system
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6606199B2 (en) 2001-10-10 2003-08-12 Honeywell International Inc. Graded thickness optical element and method of manufacture therefor
US7501303B2 (en) * 2001-11-05 2009-03-10 The Trustees Of Boston University Reflective layer buried in silicon and method of fabrication
JP4574547B2 (ja) * 2002-10-22 2010-11-04 ユニヴァーシティー カレッジ カーディフ コンサルタンツ リミテッド 半導体光学装置
US20040079285A1 (en) * 2002-10-24 2004-04-29 Motorola, Inc. Automation of oxide material growth in molecular beam epitaxy systems
US6885065B2 (en) * 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US20040101861A1 (en) * 2002-11-27 2004-05-27 Little Roger G. Resonant cavity photodiode array for rapid DNA microarray readout
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
US6963090B2 (en) * 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
TWI250659B (en) * 2003-07-31 2006-03-01 Osram Opto Semiconductors Gmbh Radiation-receiving semiconductor-body with an integrated filter-layer
CN100345015C (zh) * 2003-12-30 2007-10-24 侯继东 一类基于微机电系统技术的可调光学器件
US8253166B2 (en) * 2004-09-14 2012-08-28 Finisar Corporation Band offset in AlInGaP based light emitters to improve temperature performance
WO2006044982A1 (en) * 2004-10-20 2006-04-27 Massachusetts Institute Of Technology Infrared detection material and method of production
JP4666217B2 (ja) * 2005-09-30 2011-04-06 信越半導体株式会社 フォトニック結晶の製造方法
US7846391B2 (en) * 2006-05-22 2010-12-07 Lumencor, Inc. Bioanalytical instrumentation using a light source subsystem
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
WO2008073639A2 (en) * 2006-11-07 2008-06-19 Cdm Optics, Inc. Increased sensitivity of light detector using a resonant structure and associated methods
US7709811B2 (en) * 2007-07-03 2010-05-04 Conner Arlie R Light emitting diode illumination system
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
US8247754B2 (en) * 2008-04-09 2012-08-21 Princeton Lightwave, Inc. Solid state focal plane array for hyperspectral imaging applications
US8242462B2 (en) 2009-01-23 2012-08-14 Lumencor, Inc. Lighting design of high quality biomedical devices
US8654232B2 (en) * 2010-08-25 2014-02-18 Sri International Night vision CMOS imager with optical pixel cavity
US8466436B2 (en) 2011-01-14 2013-06-18 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US8389957B2 (en) 2011-01-14 2013-03-05 Lumencor, Inc. System and method for metered dosage illumination in a bioanalysis or other system
US9103528B2 (en) 2012-01-20 2015-08-11 Lumencor, Inc Solid state continuous white light source
GB2502311A (en) * 2012-05-24 2013-11-27 Ibm Photovoltaic device with band-stop filter
US9217561B2 (en) 2012-06-15 2015-12-22 Lumencor, Inc. Solid state light source for photocuring
US9619084B2 (en) * 2012-10-04 2017-04-11 Corning Incorporated Touch screen systems and methods for sensing touch screen displacement
US9362428B2 (en) * 2012-11-27 2016-06-07 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10916669B2 (en) 2012-12-10 2021-02-09 Artilux, Inc. Photonic lock based high bandwidth photodetector
US10388806B2 (en) 2012-12-10 2019-08-20 Artilux, Inc. Photonic lock based high bandwidth photodetector
EP2889917A3 (de) * 2013-12-28 2015-07-29 Shu-Lu Chen Auf photonischer Kopplung basierender Fotodetektor mit hoher Bandbreite
CN105206629A (zh) * 2014-06-18 2015-12-30 上海华力微电子有限公司 Cmos感光元件及制备方法
JP6571389B2 (ja) * 2015-05-20 2019-09-04 シャープ株式会社 窒化物半導体発光素子およびその製造方法
US10644187B2 (en) 2015-07-24 2020-05-05 Artilux, Inc. Multi-wafer based light absorption apparatus and applications thereof
WO2019180165A1 (en) 2018-03-22 2019-09-26 Iee International Electronics & Engineering S.A. Photodetector
CN112234116A (zh) * 2019-06-27 2021-01-15 张家港恩达通讯科技有限公司 具有反射层的铟镓砷光电探测器及其制备方法
KR20210103626A (ko) 2020-02-13 2021-08-24 한국전자통신연구원 도파로형 광 검출기
CN111653631B (zh) * 2020-06-10 2023-10-27 苏州大学 工作波长与入射光角度无关的热电子光探测器及制造方法
CN112289875A (zh) * 2020-10-29 2021-01-29 中国计量大学 一种双掺杂谐振腔单行载流子光电二极管
US11536914B2 (en) 2020-11-17 2022-12-27 Globalfoundries U.S. Inc. Photodetector array with diffraction gratings having different pitches
CN112510056A (zh) * 2020-11-25 2021-03-16 天津津航技术物理研究所 像素级cmos兼容的掺氢非晶硅宽光谱图像传感器
US11502214B2 (en) 2021-03-09 2022-11-15 Globalfoundries U.S. Inc. Photodetectors used with broadband signal
WO2023037510A1 (ja) * 2021-09-10 2023-03-16 三菱電機株式会社 波長ロッカー、モニタフォトダイオード、ビームスプリッタおよび波長ロッカーの調芯方法
US11567277B1 (en) 2021-09-13 2023-01-31 Globalfoundries U.S. Inc. Distributed Bragg reflectors including periods with airgaps

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JPS61229371A (ja) * 1985-04-04 1986-10-13 Kokusai Denshin Denwa Co Ltd <Kdd> フオトダイオ−ド
GB8610129D0 (en) * 1986-04-25 1986-05-29 Secr Defence Electro-optical device
JPS639163A (ja) * 1986-06-30 1988-01-14 Nec Corp 半導体受光素子
US4861976A (en) * 1988-06-06 1989-08-29 American Telephone And Telegraph Company, At&T Bell Laboratories Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
JPH03109779A (ja) * 1989-09-25 1991-05-09 Shimadzu Corp フォトダイオード
JP2596195B2 (ja) * 1990-08-20 1997-04-02 日本電気株式会社 垂直共振器型面入出力光電融合素子

Also Published As

Publication number Publication date
JPH06323900A (ja) 1994-11-25
EP0622857B1 (de) 1997-08-27
KR100335709B1 (ko) 2002-08-21
DE69405147T2 (de) 1998-03-26
EP0622857A1 (de) 1994-11-02
CA2116257C (en) 1997-06-17
US5315128A (en) 1994-05-24
CA2116257A1 (en) 1994-10-31
JP2894950B2 (ja) 1999-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee