DE69404971D1 - Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma - Google Patents

Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma

Info

Publication number
DE69404971D1
DE69404971D1 DE69404971T DE69404971T DE69404971D1 DE 69404971 D1 DE69404971 D1 DE 69404971D1 DE 69404971 T DE69404971 T DE 69404971T DE 69404971 T DE69404971 T DE 69404971T DE 69404971 D1 DE69404971 D1 DE 69404971D1
Authority
DE
Germany
Prior art keywords
substrate
nitrogen plasma
depositing
thin layer
cold nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404971T
Other languages
English (en)
Other versions
DE69404971T2 (de
Inventor
Franck Callebert
Philippe Supiot
Odile Dessaux
Pierre Goudmand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
THOMSON CSF PASSIVE COMPONENTS
Original Assignee
THOMSON CSF PASSIVE COMPONENTS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by THOMSON CSF PASSIVE COMPONENTS filed Critical THOMSON CSF PASSIVE COMPONENTS
Publication of DE69404971D1 publication Critical patent/DE69404971D1/de
Application granted granted Critical
Publication of DE69404971T2 publication Critical patent/DE69404971T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
DE69404971T 1993-02-10 1994-02-09 Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma Expired - Fee Related DE69404971T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9301484A FR2701492B1 (fr) 1993-02-10 1993-02-10 Procédé pour déposer une couche mince sur un substrat par plasma froid différé d'azote.
PCT/FR1994/000149 WO1994018355A1 (fr) 1993-02-10 1994-02-09 Procede pour deposer une couche mince sur un substrat par plasma froid differe d'azote

Publications (2)

Publication Number Publication Date
DE69404971D1 true DE69404971D1 (de) 1997-09-18
DE69404971T2 DE69404971T2 (de) 1997-12-18

Family

ID=9443921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404971T Expired - Fee Related DE69404971T2 (de) 1993-02-10 1994-02-09 Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma

Country Status (9)

Country Link
EP (1) EP0683825B1 (de)
JP (1) JPH08506381A (de)
KR (1) KR960701237A (de)
AT (1) ATE156866T1 (de)
CA (1) CA2155659A1 (de)
DE (1) DE69404971T2 (de)
FI (1) FI953779A (de)
FR (1) FR2701492B1 (de)
WO (1) WO1994018355A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2718155B1 (fr) * 1994-04-05 1996-04-26 Europ Composants Electron Procédé de dépôt de diélectrique et/ou de métal sur un substrat.
EP0850266B1 (de) * 1995-09-15 2002-06-05 Tarkett Sommer S.A. Verfahren zur herstellung eines bodenbelages und so hergestelltes produkt
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
JP2023507602A (ja) * 2019-12-19 2023-02-24 エージーシー グラス ユーロップ 酸化ケイ素被覆ポリマーフィルム及びそれを製造するための低圧ｐｅｃｖｄ方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
FR2651782B1 (fr) * 1989-09-14 1993-03-19 Air Liquide Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique.
US4980196A (en) * 1990-02-14 1990-12-25 E. I. Du Pont De Nemours And Company Method of coating steel substrate using low temperature plasma processes and priming
FR2661688B1 (fr) * 1990-05-02 1992-07-17 Air Liquide Revetement multicouche pour substrat polycarbonate et procede d'elaboration d'un tel revetement.
JPH0782999B2 (ja) * 1991-04-15 1995-09-06 株式会社半導体プロセス研究所 気相成長膜の形成方法、半導体製造装置、および半 導体装置
DE4126759A1 (de) * 1991-08-13 1993-02-18 Siemens Ag Verfahren zur erzeugung siliciumhaltiger organischer schichten

Also Published As

Publication number Publication date
EP0683825A1 (de) 1995-11-29
EP0683825B1 (de) 1997-08-13
FI953779A0 (fi) 1995-08-09
KR960701237A (ko) 1996-02-24
FR2701492A1 (fr) 1994-08-19
CA2155659A1 (en) 1994-08-18
FI953779A (fi) 1995-09-22
FR2701492B1 (fr) 1996-05-10
WO1994018355A1 (fr) 1994-08-18
ATE156866T1 (de) 1997-08-15
JPH08506381A (ja) 1996-07-09
DE69404971T2 (de) 1997-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee