WO1991009995A3 - Process for the deposition of thin films on solids - Google Patents
Process for the deposition of thin films on solids Download PDFInfo
- Publication number
- WO1991009995A3 WO1991009995A3 PCT/GB1990/001967 GB9001967W WO9109995A3 WO 1991009995 A3 WO1991009995 A3 WO 1991009995A3 GB 9001967 W GB9001967 W GB 9001967W WO 9109995 A3 WO9109995 A3 WO 9109995A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solids
- deposition
- thin films
- group iii
- lewis
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Abstract
A method of forming a group III metal film, or a III - V semiconductor film, on a solid substrate comprises applying to the substrate a gaseous group III precursor having the formula MH3L or MH3L2 where M is Al, In or Ga and L is a Lewis donor. Preferred Lewis donors are based on As, P or N, for example NMe3.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8928824.5 | 1989-12-21 | ||
GB898928824A GB8928824D0 (en) | 1989-12-21 | 1989-12-21 | Processes for the deposition of thin films on solids |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1991009995A2 WO1991009995A2 (en) | 1991-07-11 |
WO1991009995A3 true WO1991009995A3 (en) | 1991-10-17 |
Family
ID=10668268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/GB1990/001967 WO1991009995A2 (en) | 1989-12-21 | 1990-12-17 | Process for the deposition of thin films on solids |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH05501480A (en) |
GB (1) | GB8928824D0 (en) |
WO (1) | WO1991009995A2 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3375129A (en) * | 1966-09-22 | 1968-03-26 | Ethyl Corp | Aluminum plating employing amine complex of aluminum hydride |
EP0052979A1 (en) * | 1980-11-18 | 1982-06-02 | BRITISH TELECOMMUNICATIONS public limited company | Improvements in the manufacture of group IIIB-VB compounds |
EP0251555A1 (en) * | 1986-07-01 | 1988-01-07 | Morton Thiokol, Inc. | Gallium Hydride/trialkylamine adducts, and their use in deposition of III-V compound films |
WO1990010727A1 (en) * | 1989-03-09 | 1990-09-20 | MERCK Patent Gesellschaft mit beschränkter Haftung | Metallo-organic adduct compounds |
WO1990010726A1 (en) * | 1989-03-09 | 1990-09-20 | MERCK Patent Gesellschaft mit beschränkter Haftung | Use of metallo-organic compounds for vapour deposition of thin films |
-
1989
- 1989-12-21 GB GB898928824A patent/GB8928824D0/en active Pending
-
1990
- 1990-12-17 WO PCT/GB1990/001967 patent/WO1991009995A2/en unknown
- 1990-12-17 JP JP50133791A patent/JPH05501480A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3375129A (en) * | 1966-09-22 | 1968-03-26 | Ethyl Corp | Aluminum plating employing amine complex of aluminum hydride |
EP0052979A1 (en) * | 1980-11-18 | 1982-06-02 | BRITISH TELECOMMUNICATIONS public limited company | Improvements in the manufacture of group IIIB-VB compounds |
EP0251555A1 (en) * | 1986-07-01 | 1988-01-07 | Morton Thiokol, Inc. | Gallium Hydride/trialkylamine adducts, and their use in deposition of III-V compound films |
WO1990010727A1 (en) * | 1989-03-09 | 1990-09-20 | MERCK Patent Gesellschaft mit beschränkter Haftung | Metallo-organic adduct compounds |
WO1990010726A1 (en) * | 1989-03-09 | 1990-09-20 | MERCK Patent Gesellschaft mit beschränkter Haftung | Use of metallo-organic compounds for vapour deposition of thin films |
Non-Patent Citations (3)
Title |
---|
Chemtronics, vol. 4, no. 4, December 1989, (Guildford, Surrey, GB), J.S. Foord et al.: "Evaluation of the surface reactivity of novel hydride adduct precursors of aluminium and gallium for chemical beam epitaxy", pages 262-264, see "results and discussion" * |
Journal of Crystal Growth, vol. 104, no. 4, September 1990, Elsevier Science Publishers B.V., (Amsterdam, NL), J.S. Roberts et al.: "MOVPE growth of AlGaAs using trimethylamine alane", pages 857-860, see page 857 * |
Journal of Crystal Growth, vol. 96, no. 4, August 1989, Elsevier Science Publishers B.V., (Amsterdam, NL), A.C. Jones et al.: "Growth of AlxGa1-x as bz MOVPE using a new alkylaluminium precursor", pages 769-773 * |
Also Published As
Publication number | Publication date |
---|---|
GB8928824D0 (en) | 1990-02-28 |
JPH05501480A (en) | 1993-03-18 |
WO1991009995A2 (en) | 1991-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE107435T1 (en) | A METHOD OF MAKING A COMPOUND SEMICONDUCTOR STRUCTURE. | |
EP0250603A4 (en) | Process for forming thin film of compound semiconductor. | |
FR2604296B1 (en) | METHOD FOR DEPOSITING III-V OR II-VI SEMICONDUCTOR THIN FILMS ONTO A SUBSTRATE BY THERMAL DECOMPOSITION | |
EP0191505A3 (en) | Method of producing sheets of crystalline material | |
GB9315771D0 (en) | Method of depositing thin metal films | |
EP1179842A3 (en) | Semiconductor substrate and method for preparing same | |
EP0377940A3 (en) | Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element | |
WO1994008076A1 (en) | Heteroepitaxially deposited diamond | |
GB1528192A (en) | Surface treatment of iii-v compound crystals | |
DE68906802T2 (en) | Process for forming a functional vapor-deposited film of Group III and V atoms as the main component atoms by chemical microwave plasma vapor deposition. | |
KR880001684A (en) | How to use gallium hydride-drialkylamine adducts and III-V compound films | |
WO1991009995A3 (en) | Process for the deposition of thin films on solids | |
EP0240952A3 (en) | A method for producing a flaky material | |
EP0342063A3 (en) | Process for preparing an electroluminescent film | |
GB2202371B (en) | Semiconductor device | |
DE69404971T2 (en) | METHOD FOR DEPOSITING A THIN LAYER ON A SUBSTRATE BY DELAYING COLD NITROGEN PLASMA | |
JPS5659700A (en) | Forming method for gallium nitride single crystal thin film | |
ES2004276A6 (en) | Semiconductor device including an epitaxial layer on a lattice-mismatched single crystal substrate. | |
JPS56129645A (en) | Forming method for metallic thin film | |
ATE80498T1 (en) | MATERIAL-SAVING PROCESS FOR THE MANUFACTURE OF MIXED CRYSTALS. | |
KR920013558A (en) | Anti-Doming Material Deposition Method of Shadow Mask | |
JPS5462777A (en) | Production of compound semiconductor thin films | |
EP0349781A3 (en) | Metal organic vapor phase epitaxial growth of group iii-v compounds | |
JPS5645827A (en) | Forming method for transparent ferroelectric thin film | |
JPS53108767A (en) | Growth method of polycrystalline silicon |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE |
|
AK | Designated states |
Kind code of ref document: A3 Designated state(s): JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU NL SE |