WO1991009995A3 - Procede pour le depot de couches minces sur des solides - Google Patents

Procede pour le depot de couches minces sur des solides Download PDF

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Publication number
WO1991009995A3
WO1991009995A3 PCT/GB1990/001967 GB9001967W WO9109995A3 WO 1991009995 A3 WO1991009995 A3 WO 1991009995A3 GB 9001967 W GB9001967 W GB 9001967W WO 9109995 A3 WO9109995 A3 WO 9109995A3
Authority
WO
WIPO (PCT)
Prior art keywords
solids
deposition
thin films
group iii
lewis
Prior art date
Application number
PCT/GB1990/001967
Other languages
English (en)
Other versions
WO1991009995A2 (fr
Inventor
John Stuart Foord
Dermot O'hare
Original Assignee
Isis Innovation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isis Innovation filed Critical Isis Innovation
Publication of WO1991009995A2 publication Critical patent/WO1991009995A2/fr
Publication of WO1991009995A3 publication Critical patent/WO1991009995A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

Un procédé pour former un film de métal du groupe III, ou un film semi-conducteur III - V, sur un substrat solide consiste à appliquer à ce dernier un précurseur gazeux du groupe III ayant la formule MH3L ou MH3L2 où M est Al, In ou Ga et L est un doneur de Lewis. Des doneurs de Lewis préférés sont à base d'As, P ou N, par exemple NMe3.
PCT/GB1990/001967 1989-12-21 1990-12-17 Procede pour le depot de couches minces sur des solides WO1991009995A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898928824A GB8928824D0 (en) 1989-12-21 1989-12-21 Processes for the deposition of thin films on solids
GB8928824.5 1989-12-21

Publications (2)

Publication Number Publication Date
WO1991009995A2 WO1991009995A2 (fr) 1991-07-11
WO1991009995A3 true WO1991009995A3 (fr) 1991-10-17

Family

ID=10668268

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1990/001967 WO1991009995A2 (fr) 1989-12-21 1990-12-17 Procede pour le depot de couches minces sur des solides

Country Status (3)

Country Link
JP (1) JPH05501480A (fr)
GB (1) GB8928824D0 (fr)
WO (1) WO1991009995A2 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3375129A (en) * 1966-09-22 1968-03-26 Ethyl Corp Aluminum plating employing amine complex of aluminum hydride
EP0052979A1 (fr) * 1980-11-18 1982-06-02 BRITISH TELECOMMUNICATIONS public limited company Production de composés du groupe IIIB-VB
EP0251555A1 (fr) * 1986-07-01 1988-01-07 Morton Thiokol, Inc. Produits d'addition de l'hydrure de gallium/trialkylamine et leur emploi pour le dépôt de films de composés III-V
WO1990010726A1 (fr) * 1989-03-09 1990-09-20 MERCK Patent Gesellschaft mit beschränkter Haftung Utilisation de composes organo-metalliques pour la deposition de couches minces en phase gazeuse
WO1990010727A1 (fr) * 1989-03-09 1990-09-20 MERCK Patent Gesellschaft mit beschränkter Haftung Produits d'addition organo-metalliques

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3375129A (en) * 1966-09-22 1968-03-26 Ethyl Corp Aluminum plating employing amine complex of aluminum hydride
EP0052979A1 (fr) * 1980-11-18 1982-06-02 BRITISH TELECOMMUNICATIONS public limited company Production de composés du groupe IIIB-VB
EP0251555A1 (fr) * 1986-07-01 1988-01-07 Morton Thiokol, Inc. Produits d'addition de l'hydrure de gallium/trialkylamine et leur emploi pour le dépôt de films de composés III-V
WO1990010726A1 (fr) * 1989-03-09 1990-09-20 MERCK Patent Gesellschaft mit beschränkter Haftung Utilisation de composes organo-metalliques pour la deposition de couches minces en phase gazeuse
WO1990010727A1 (fr) * 1989-03-09 1990-09-20 MERCK Patent Gesellschaft mit beschränkter Haftung Produits d'addition organo-metalliques

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Chemtronics, vol. 4, no. 4, December 1989, (Guildford, Surrey, GB), J.S. Foord et al.: "Evaluation of the surface reactivity of novel hydride adduct precursors of aluminium and gallium for chemical beam epitaxy", pages 262-264, see "results and discussion" *
Journal of Crystal Growth, vol. 104, no. 4, September 1990, Elsevier Science Publishers B.V., (Amsterdam, NL), J.S. Roberts et al.: "MOVPE growth of AlGaAs using trimethylamine alane", pages 857-860, see page 857 *
Journal of Crystal Growth, vol. 96, no. 4, August 1989, Elsevier Science Publishers B.V., (Amsterdam, NL), A.C. Jones et al.: "Growth of AlxGa1-x as bz MOVPE using a new alkylaluminium precursor", pages 769-773 *

Also Published As

Publication number Publication date
WO1991009995A2 (fr) 1991-07-11
GB8928824D0 (en) 1990-02-28
JPH05501480A (ja) 1993-03-18

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