DE69404745T2 - Elektrode zur Verwendung in Plasma-unterstützten chemischen Ätzprozessen - Google Patents

Elektrode zur Verwendung in Plasma-unterstützten chemischen Ätzprozessen

Info

Publication number
DE69404745T2
DE69404745T2 DE69404745T DE69404745T DE69404745T2 DE 69404745 T2 DE69404745 T2 DE 69404745T2 DE 69404745 T DE69404745 T DE 69404745T DE 69404745 T DE69404745 T DE 69404745T DE 69404745 T2 DE69404745 T2 DE 69404745T2
Authority
DE
Germany
Prior art keywords
annular gap
electrode
lower portion
cavity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69404745T
Other languages
German (de)
English (en)
Other versions
DE69404745D1 (de
Inventor
George Steinberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ipec Precision Inc
Original Assignee
Ipec Precision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipec Precision Inc filed Critical Ipec Precision Inc
Application granted granted Critical
Publication of DE69404745D1 publication Critical patent/DE69404745D1/de
Publication of DE69404745T2 publication Critical patent/DE69404745T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
DE69404745T 1993-05-14 1994-05-12 Elektrode zur Verwendung in Plasma-unterstützten chemischen Ätzprozessen Expired - Fee Related DE69404745T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6208793A 1993-05-14 1993-05-14

Publications (2)

Publication Number Publication Date
DE69404745D1 DE69404745D1 (de) 1997-09-11
DE69404745T2 true DE69404745T2 (de) 1998-03-19

Family

ID=22040138

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69404745T Expired - Fee Related DE69404745T2 (de) 1993-05-14 1994-05-12 Elektrode zur Verwendung in Plasma-unterstützten chemischen Ätzprozessen

Country Status (7)

Country Link
US (1) US5372674A (enExample)
EP (1) EP0624897B1 (enExample)
JP (1) JP2749516B2 (enExample)
DE (1) DE69404745T2 (enExample)
IL (1) IL109588A (enExample)
NO (1) NO941674L (enExample)
TW (1) TW253066B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5567255A (en) * 1994-10-13 1996-10-22 Integrated Process Equipment Corp. Solid annular gas discharge electrode
IL116156A0 (en) * 1994-12-05 1996-01-31 Hughes Aircraft Co Cooled gas distribution system for a plasma
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
US6500314B1 (en) 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US5961772A (en) * 1997-01-23 1999-10-05 The Regents Of The University Of California Atmospheric-pressure plasma jet
US6030887A (en) * 1998-02-26 2000-02-29 Memc Electronic Materials, Inc. Flattening process for epitaxial semiconductor wafers
US7569790B2 (en) 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US8779322B2 (en) 1997-06-26 2014-07-15 Mks Instruments Inc. Method and apparatus for processing metal bearing gases
US7166816B1 (en) 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
AU1111499A (en) * 1997-10-20 1999-05-10 Steve E. Babayan Deposition of coatings using an atmospheric pressure plasma jet
US6063235A (en) * 1998-08-14 2000-05-16 Plasmasil, Llc Gas discharge apparatus for wafer etching systems
US6261406B1 (en) 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
US6200908B1 (en) 1999-08-04 2001-03-13 Memc Electronic Materials, Inc. Process for reducing waviness in semiconductor wafers
US7510664B2 (en) 2001-01-30 2009-03-31 Rapt Industries, Inc. Apparatus and method for atmospheric pressure reactive atom plasma processing for shaping of damage free surfaces
US7591957B2 (en) 2001-01-30 2009-09-22 Rapt Industries, Inc. Method for atmospheric pressure reactive atom plasma processing for surface modification
US6660177B2 (en) * 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
US6936546B2 (en) * 2002-04-26 2005-08-30 Accretech Usa, Inc. Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
US7371992B2 (en) 2003-03-07 2008-05-13 Rapt Industries, Inc. Method for non-contact cleaning of a surface
CN102084469B (zh) * 2008-07-09 2013-05-01 东京毅力科创株式会社 等离子体处理装置
JP5292160B2 (ja) * 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
JP5567392B2 (ja) * 2010-05-25 2014-08-06 東京エレクトロン株式会社 プラズマ処理装置
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
GB2593491A (en) 2020-03-24 2021-09-29 Res & Innovation Uk Electron microscopy support
JP2022145477A (ja) * 2021-03-18 2022-10-04 国立大学法人長岡技術科学大学 ワーク加工装置
JP7750471B2 (ja) * 2021-03-18 2025-10-07 国立大学法人長岡技術科学大学 ワーク加工装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2264891B1 (enExample) * 1974-03-19 1977-10-07 Michel Henri
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
JPS6012734A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd プラズマ処理装置
JPS6173331A (ja) * 1984-09-17 1986-04-15 Mitsubishi Electric Corp ドライエツチング装置
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
JPH066505Y2 (ja) * 1986-04-11 1994-02-16 沖電気工業株式会社 電極の冷却機構
JPH02148835A (ja) * 1988-11-30 1990-06-07 Plasma Syst:Kk プラズマ処理装置
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
JPH0817171B2 (ja) * 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法

Also Published As

Publication number Publication date
IL109588A (en) 1997-06-10
JP2749516B2 (ja) 1998-05-13
NO941674L (no) 1994-11-15
TW253066B (enExample) 1995-08-01
US5372674A (en) 1994-12-13
IL109588A0 (en) 1994-08-26
EP0624897B1 (en) 1997-08-06
NO941674D0 (no) 1994-05-06
DE69404745D1 (de) 1997-09-11
JPH0794495A (ja) 1995-04-07
EP0624897A1 (en) 1994-11-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee