DE69020264T2 - Ätzkammer mit gasdispersionsmembran. - Google Patents

Ätzkammer mit gasdispersionsmembran.

Info

Publication number
DE69020264T2
DE69020264T2 DE69020264T DE69020264T DE69020264T2 DE 69020264 T2 DE69020264 T2 DE 69020264T2 DE 69020264 T DE69020264 T DE 69020264T DE 69020264 T DE69020264 T DE 69020264T DE 69020264 T2 DE69020264 T2 DE 69020264T2
Authority
DE
Germany
Prior art keywords
etching chamber
gas dispersion
dispersion membrane
membrane
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69020264T
Other languages
English (en)
Other versions
DE69020264D1 (de
Inventor
Daniel Syverson
Richard Novak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI International Inc filed Critical FSI International Inc
Application granted granted Critical
Publication of DE69020264D1 publication Critical patent/DE69020264D1/de
Publication of DE69020264T2 publication Critical patent/DE69020264T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69020264T 1989-03-08 1990-02-12 Ätzkammer mit gasdispersionsmembran. Expired - Fee Related DE69020264T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/320,494 US5458724A (en) 1989-03-08 1989-03-08 Etch chamber with gas dispersing membrane
PCT/US1990/000792 WO1990010729A1 (en) 1989-03-08 1990-02-12 Improved etch chamber with gas dispersing membrane

Publications (2)

Publication Number Publication Date
DE69020264D1 DE69020264D1 (de) 1995-07-27
DE69020264T2 true DE69020264T2 (de) 1995-10-26

Family

ID=23246683

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69020264T Expired - Fee Related DE69020264T2 (de) 1989-03-08 1990-02-12 Ätzkammer mit gasdispersionsmembran.

Country Status (4)

Country Link
US (1) US5458724A (de)
EP (1) EP0414859B1 (de)
DE (1) DE69020264T2 (de)
WO (1) WO1990010729A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3328416B2 (ja) * 1994-03-18 2002-09-24 富士通株式会社 半導体装置の製造方法と製造装置
TW371775B (en) * 1995-04-28 1999-10-11 Siemens Ag Method for the selective removal of silicon dioxide
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6352593B1 (en) 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
US6780464B2 (en) 1997-08-11 2004-08-24 Torrex Equipment Thermal gradient enhanced CVD deposition at low pressure
US6167837B1 (en) 1998-01-15 2001-01-02 Torrex Equipment Corp. Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US6352594B2 (en) 1997-08-11 2002-03-05 Torrex Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
WO1999036587A1 (en) * 1998-01-15 1999-07-22 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US6335293B1 (en) * 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6494984B2 (en) * 1999-01-14 2002-12-17 Semitool, Inc. Flat media processing machine
JP3330554B2 (ja) * 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
WO2001064315A1 (en) * 2000-03-01 2001-09-07 Mykrolis Corporation Centering ring diffuser/filter
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5291650A (en) * 1976-01-29 1977-08-02 Toshiba Corp Continuous gas plasma etching apparatus
IT1203089B (it) * 1976-03-03 1989-02-15 Int Plasma Corp Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma
FR2376904A1 (fr) * 1977-01-11 1978-08-04 Alsthom Atlantique Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma
US4119881A (en) * 1978-02-27 1978-10-10 Control Data Corporation Ion beam generator having concentrically arranged frustoconical accelerating grids
US4230515A (en) * 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4313783A (en) * 1980-05-19 1982-02-02 Branson International Plasma Corporation Computer controlled system for processing semiconductor wafers
JPH0770509B2 (ja) * 1982-10-08 1995-07-31 株式会社日立製作所 ドライプロセス装置
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS60137021A (ja) * 1983-12-26 1985-07-20 Toshiba Corp プラズマエツチング装置
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
US4590042A (en) * 1984-12-24 1986-05-20 Tegal Corporation Plasma reactor having slotted manifold
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
US4631105A (en) * 1985-04-22 1986-12-23 Branson International Plasma Corporation Plasma etching apparatus
US4600464A (en) * 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4595484A (en) * 1985-12-02 1986-06-17 International Business Machines Corporation Reactive ion etching apparatus
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4846928A (en) * 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US4859277A (en) * 1988-05-03 1989-08-22 Texas Instruments Incorporated Method for measuring plasma properties in semiconductor processing
US4857142A (en) * 1988-09-22 1989-08-15 Fsi International, Inc. Method and apparatus for controlling simultaneous etching of front and back sides of wafers

Also Published As

Publication number Publication date
EP0414859A1 (de) 1991-03-06
US5458724A (en) 1995-10-17
EP0414859B1 (de) 1995-06-21
WO1990010729A1 (en) 1990-09-20
DE69020264D1 (de) 1995-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee