DE69401210T2 - Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage - Google Patents
Kollimator mit integrierter Reaktivgasverteilung für KathodenzerstäubungsanlageInfo
- Publication number
- DE69401210T2 DE69401210T2 DE69401210T DE69401210T DE69401210T2 DE 69401210 T2 DE69401210 T2 DE 69401210T2 DE 69401210 T DE69401210 T DE 69401210T DE 69401210 T DE69401210 T DE 69401210T DE 69401210 T2 DE69401210 T2 DE 69401210T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- target
- gas
- collimator
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims description 80
- 239000007789 gas Substances 0.000 claims description 71
- 239000000463 material Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 11
- 239000004744 fabric Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000013022 venting Methods 0.000 claims 4
- 238000005477 sputtering target Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 18
- 239000002245 particle Substances 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/060,315 US5346601A (en) | 1993-05-11 | 1993-05-11 | Sputter coating collimator with integral reactive gas distribution |
| PCT/US1994/005248 WO1994026949A1 (en) | 1993-05-11 | 1994-05-11 | Sputter coating collimator with integral reactive gas distribution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69401210D1 DE69401210D1 (de) | 1997-01-30 |
| DE69401210T2 true DE69401210T2 (de) | 1997-04-10 |
Family
ID=22028722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69401210T Expired - Fee Related DE69401210T2 (de) | 1993-05-11 | 1994-05-11 | Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5346601A (enExample) |
| EP (1) | EP0698128B1 (enExample) |
| JP (1) | JPH08510296A (enExample) |
| AU (1) | AU6831494A (enExample) |
| CA (1) | CA2156716A1 (enExample) |
| DE (1) | DE69401210T2 (enExample) |
| TW (1) | TW243536B (enExample) |
| WO (1) | WO1994026949A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5928771A (en) * | 1995-05-12 | 1999-07-27 | Diamond Black Technologies, Inc. | Disordered coating with cubic boron nitride dispersed therein |
| US5591313A (en) * | 1995-06-30 | 1997-01-07 | Tabco Technologies, Inc. | Apparatus and method for localized ion sputtering |
| EP0766304A2 (en) * | 1995-09-29 | 1997-04-02 | AT&T Corp. | Method for coating heterogeneous substrates with homogeneous layers |
| US5705042A (en) * | 1996-01-29 | 1998-01-06 | Micron Technology, Inc. | Electrically isolated collimator and method |
| US5985102A (en) * | 1996-01-29 | 1999-11-16 | Micron Technology, Inc. | Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using |
| US6287436B1 (en) | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
| KR100340174B1 (ko) * | 1999-04-06 | 2002-06-12 | 이동준 | 전기화학적 바이오센서 테스트 스트립, 그 제조방법 및 전기화학적 바이오센서 |
| US6352626B1 (en) | 1999-04-19 | 2002-03-05 | Von Zweck Heimart | Sputter ion source for boron and other targets |
| US20070235320A1 (en) * | 2006-04-06 | 2007-10-11 | Applied Materials, Inc. | Reactive sputtering chamber with gas distribution tubes |
| JP5222281B2 (ja) * | 2006-04-06 | 2013-06-26 | アプライド マテリアルズ インコーポレイテッド | ラージエリア基板への酸化亜鉛透明導電性酸化物の反応性スパッタリング |
| US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
| US7927713B2 (en) | 2007-04-27 | 2011-04-19 | Applied Materials, Inc. | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| KR101536101B1 (ko) * | 2007-08-02 | 2015-07-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 반도체 물질들을 이용하는 박막 트랜지스터들 |
| US8980066B2 (en) * | 2008-03-14 | 2015-03-17 | Applied Materials, Inc. | Thin film metal oxynitride semiconductors |
| US8143093B2 (en) * | 2008-03-20 | 2012-03-27 | Applied Materials, Inc. | Process to make metal oxide thin film transistor array with etch stopping layer |
| US7879698B2 (en) * | 2008-03-24 | 2011-02-01 | Applied Materials, Inc. | Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor |
| US8258511B2 (en) | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
| US7988470B2 (en) * | 2009-09-24 | 2011-08-02 | Applied Materials, Inc. | Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch |
| US8840763B2 (en) * | 2009-09-28 | 2014-09-23 | Applied Materials, Inc. | Methods for stable process in a reactive sputtering process using zinc or doped zinc target |
| US11851751B2 (en) * | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3595773A (en) * | 1965-12-17 | 1971-07-27 | Euratom | Process for depositing on surfaces |
| US4297162A (en) * | 1979-10-17 | 1981-10-27 | Texas Instruments Incorporated | Plasma etching using improved electrode |
| US4364995A (en) * | 1981-02-04 | 1982-12-21 | Minnesota Mining And Manufacturing Company | Metal/metal oxide coatings |
| FR2538987A1 (fr) * | 1983-01-05 | 1984-07-06 | Commissariat Energie Atomique | Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif |
| DE3331707A1 (de) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern |
| JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| US4534816A (en) * | 1984-06-22 | 1985-08-13 | International Business Machines Corporation | Single wafer plasma etch reactor |
| JPS6175514A (ja) * | 1984-09-21 | 1986-04-17 | Hitachi Ltd | 処理装置 |
| US4793975A (en) * | 1985-05-20 | 1988-12-27 | Tegal Corporation | Plasma Reactor with removable insert |
| JPS627855A (ja) * | 1985-07-05 | 1987-01-14 | Hitachi Ltd | スパツタリング装置 |
| JPH0812856B2 (ja) * | 1986-01-17 | 1996-02-07 | 株式会社日立製作所 | プラズマ処理方法および装置 |
| GB8622820D0 (en) * | 1986-09-23 | 1986-10-29 | Nordiko Ltd | Electrode assembly & apparatus |
| US4780169A (en) * | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
| JPH0660391B2 (ja) * | 1987-06-11 | 1994-08-10 | 日電アネルバ株式会社 | スパッタリング装置 |
| US4846928A (en) * | 1987-08-04 | 1989-07-11 | Texas Instruments, Incorporated | Process and apparatus for detecting aberrations in production process operations |
| JPH0741153Y2 (ja) * | 1987-10-26 | 1995-09-20 | 東京応化工業株式会社 | 試料処理用電極 |
| JPH01302726A (ja) * | 1988-02-10 | 1989-12-06 | Japan Synthetic Rubber Co Ltd | 反応性イオンエッチング装置 |
| US4931158A (en) * | 1988-03-22 | 1990-06-05 | The Regents Of The Univ. Of Calif. | Deposition of films onto large area substrates using modified reactive magnetron sputtering |
| ES2043970T3 (es) * | 1988-07-15 | 1994-01-01 | Balzers Hochvakuum | Dispositivo de fijacion para un disco, asi como su aplicacion. |
| JPH02151865A (ja) * | 1988-11-22 | 1990-06-11 | Ucb Sa | 高温反応処理方法 |
| DE3914065A1 (de) * | 1989-04-28 | 1990-10-31 | Leybold Ag | Vorrichtung zur durchfuehrung von plasma-aetzverfahren |
| DE3926877A1 (de) * | 1989-08-16 | 1991-02-21 | Leybold Ag | Verfahren zum beschichten eines dielektrischen substrats mit kupfer |
| US5108569A (en) * | 1989-11-30 | 1992-04-28 | Applied Materials, Inc. | Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering |
| JPH0465823A (ja) * | 1990-07-06 | 1992-03-02 | Oki Electric Ind Co Ltd | 半導体素子の製造方法および製造装置 |
| DE4106770C2 (de) * | 1991-03-04 | 1996-10-17 | Leybold Ag | Verrichtung zum reaktiven Beschichten eines Substrats |
| CA2061119C (en) * | 1991-04-19 | 1998-02-03 | Pei-Ing P. Lee | Method of depositing conductors in high aspect ratio apertures |
| US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
-
1993
- 1993-05-11 US US08/060,315 patent/US5346601A/en not_active Expired - Fee Related
-
1994
- 1994-05-11 CA CA002156716A patent/CA2156716A1/en not_active Abandoned
- 1994-05-11 WO PCT/US1994/005248 patent/WO1994026949A1/en not_active Ceased
- 1994-05-11 AU AU68314/94A patent/AU6831494A/en not_active Abandoned
- 1994-05-11 DE DE69401210T patent/DE69401210T2/de not_active Expired - Fee Related
- 1994-05-11 EP EP94916738A patent/EP0698128B1/en not_active Expired - Lifetime
- 1994-05-11 JP JP6525681A patent/JPH08510296A/ja active Pending
- 1994-06-11 TW TW083105336A patent/TW243536B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1994026949A1 (en) | 1994-11-24 |
| DE69401210D1 (de) | 1997-01-30 |
| JPH08510296A (ja) | 1996-10-29 |
| TW243536B (enExample) | 1995-03-21 |
| EP0698128A1 (en) | 1996-02-28 |
| US5346601A (en) | 1994-09-13 |
| EP0698128B1 (en) | 1996-12-18 |
| AU6831494A (en) | 1994-12-12 |
| CA2156716A1 (en) | 1994-11-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP |
|
| 8339 | Ceased/non-payment of the annual fee |