DE69332335T2 - Über silizium epitaktische aufgewachsene dünne kubische metalloxydschicht - Google Patents

Über silizium epitaktische aufgewachsene dünne kubische metalloxydschicht

Info

Publication number
DE69332335T2
DE69332335T2 DE69332335T DE69332335T DE69332335T2 DE 69332335 T2 DE69332335 T2 DE 69332335T2 DE 69332335 T DE69332335 T DE 69332335T DE 69332335 T DE69332335 T DE 69332335T DE 69332335 T2 DE69332335 T2 DE 69332335T2
Authority
DE
Germany
Prior art keywords
oxydslay
epitactic
silicon
cubic metal
thin cubic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69332335T
Other languages
English (en)
Other versions
DE69332335D1 (de
Inventor
Ramamoorthy Ramesh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Telcordia Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1993/001582 external-priority patent/WO1993018531A1/en
Application filed by Telcordia Technologies Inc filed Critical Telcordia Technologies Inc
Application granted granted Critical
Publication of DE69332335D1 publication Critical patent/DE69332335D1/de
Publication of DE69332335T2 publication Critical patent/DE69332335T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H10N30/708—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
DE69332335T 1992-08-04 1993-07-13 Über silizium epitaktische aufgewachsene dünne kubische metalloxydschicht Expired - Fee Related DE69332335T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/925,350 US5270298A (en) 1992-03-05 1992-08-04 Cubic metal oxide thin film epitaxially grown on silicon
PCT/US1993/001582 WO1993018531A1 (en) 1992-03-05 1993-02-23 Crystallographically aligned ferroelectric films usable in memories and method of making
PCT/US1993/006551 WO1994003908A1 (en) 1992-03-05 1993-07-13 Cubic metal oxide thin film epitaxially grown on silicon

Publications (2)

Publication Number Publication Date
DE69332335D1 DE69332335D1 (de) 2002-10-31
DE69332335T2 true DE69332335T2 (de) 2003-05-22

Family

ID=25451602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69332335T Expired - Fee Related DE69332335T2 (de) 1992-08-04 1993-07-13 Über silizium epitaktische aufgewachsene dünne kubische metalloxydschicht

Country Status (6)

Country Link
US (1) US5270298A (de)
EP (1) EP0654169B1 (de)
JP (1) JP2819067B2 (de)
CA (1) CA2141566A1 (de)
DE (1) DE69332335T2 (de)
WO (1) WO1994003908A1 (de)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3045419B2 (ja) * 1991-11-08 2000-05-29 ローム株式会社 誘電体膜コンデンサ
EP0636271B1 (de) * 1992-04-13 1999-11-03 Sharp Kabushiki Kaisha Stapelelektroden für ferroelektrische vorrichtungen
JP3205976B2 (ja) * 1992-09-14 2001-09-04 住友電気工業株式会社 表面弾性波素子
US5387459A (en) * 1992-12-17 1995-02-07 Eastman Kodak Company Multilayer structure having an epitaxial metal electrode
JPH06196648A (ja) * 1992-12-25 1994-07-15 Fuji Xerox Co Ltd 配向性強誘電体薄膜素子
JP3163606B2 (ja) * 1993-01-29 2001-05-08 住友電気工業株式会社 表面弾性波素子
US5409548A (en) * 1993-05-17 1995-04-25 The United States Of America As Represented By The Secretary Of The Army Ferroelectric detector array utilizing material and fabrication technique
DE4323821A1 (de) * 1993-07-15 1995-01-19 Siemens Ag Pyrodetektorelement mit orientiert aufgewachsener pyroelektrischer Schicht und Verfahren zu seiner Herstellung
MXPA94009540A (es) * 1993-07-30 2005-04-29 Martin Marietta Energy Systems Procedimiento para hacer crecer una pelicula epitaxialmente sobre una superficie de oxido, y las estructuras formadas con el procedimiento.
US5470668A (en) * 1994-03-31 1995-11-28 The Regents Of The University Of Calif. Metal oxide films on metal
US5478653A (en) * 1994-04-04 1995-12-26 Guenzer; Charles S. Bismuth titanate as a template layer for growth of crystallographically oriented silicon
US5589284A (en) * 1994-08-01 1996-12-31 Texas Instruments Incorporated Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics
US5479317A (en) * 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
US5519235A (en) * 1994-11-18 1996-05-21 Bell Communications Research, Inc. Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors
US5821598A (en) * 1995-02-01 1998-10-13 Research Corporation Technologies, Inc. Uncooled amorphous YBaCuO thin film infrared detector
US5572060A (en) * 1995-02-01 1996-11-05 Southern Methodist University Uncooled YBaCuO thin film infrared detector
KR100333234B1 (ko) * 1995-06-07 2002-06-20 마츠시타 덴끼 산교 가부시키가이샤 기판및배선층사이에버퍼층을가진집적회로
JP3133922B2 (ja) * 1995-06-09 2001-02-13 シャープ株式会社 強誘電体薄膜被覆基板、その製造方法、及びキャパシタ構造素子
EP0972309A4 (de) * 1995-06-28 2000-01-19 Telcordia Tech Inc Sperrschicht für auf silizium integrierte ferroelektrische speicheranordnung
DE19543539C1 (de) * 1995-11-22 1997-04-10 Siemens Ag Verfahren zur Herstellung einer Speicherzellenanordnung
JP3435966B2 (ja) 1996-03-13 2003-08-11 株式会社日立製作所 強誘電体素子とその製造方法
US5792569A (en) * 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials
WO1997041081A1 (de) * 1996-04-26 1997-11-06 Forschungszentrum Jülich GmbH Pin-schichtenfolge auf einem perowskiten
US6548342B1 (en) 1996-08-20 2003-04-15 Hitachi, Ltd. Method of producing oxide dielectric element, and memory and semiconductor device using the element
JPH10265948A (ja) 1997-03-25 1998-10-06 Rohm Co Ltd 半導体装置用基板およびその製法
US5972108A (en) * 1997-08-13 1999-10-26 Texas Instruments Incorporated Method of preferentially-ordering a thermally sensitive element
KR100243298B1 (ko) * 1997-09-08 2000-02-01 윤종용 반도체장치의 커패시터 형성방법
US6074885A (en) * 1997-11-25 2000-06-13 Radiant Technologies, Inc Lead titanate isolation layers for use in fabricating PZT-based capacitors and similar structures
US6284654B1 (en) 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
CA2343129A1 (en) * 1998-09-24 2000-03-30 University Of Maryland Ferroelectric thin films of reduced tetragonality
JP2000305117A (ja) * 1999-02-19 2000-11-02 Fuji Xerox Co Ltd 光デバイス、光デバイスの駆動方法、及び光デバイスの製造方法
US6194754B1 (en) 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
SE513809C2 (sv) * 1999-04-13 2000-11-06 Ericsson Telefon Ab L M Avstämbara mikrovågsanordningar
US6312819B1 (en) 1999-05-26 2001-11-06 The Regents Of The University Of California Oriented conductive oxide electrodes on SiO2/Si and glass
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
SE517440C2 (sv) * 2000-06-20 2002-06-04 Ericsson Telefon Ab L M Elektriskt avstämbar anordning och ett förfarande relaterande därtill
US6427066B1 (en) 2000-06-30 2002-07-30 Motorola, Inc. Apparatus and method for effecting communications among a plurality of remote stations
US6477285B1 (en) 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6501973B1 (en) 2000-06-30 2002-12-31 Motorola, Inc. Apparatus and method for measuring selected physical condition of an animate subject
US6410941B1 (en) 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports
US6482538B2 (en) 2000-07-24 2002-11-19 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
CN1449458A (zh) * 2000-07-24 2003-10-15 摩托罗拉公司 薄膜金属氧化物结构及其制造方法
US6590236B1 (en) 2000-07-24 2003-07-08 Motorola, Inc. Semiconductor structure for use with high-frequency signals
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6432546B1 (en) 2000-07-24 2002-08-13 Motorola, Inc. Microelectronic piezoelectric structure and method of forming the same
AU2001288387A1 (en) * 2000-08-25 2002-03-04 Microcoating Technologies, Inc. Electronic and optical devices and methods of forming these devices
US7315662B2 (en) * 2000-08-25 2008-01-01 N Gimat Co. Electronic and optical devices and methods of forming these devices
US6518609B1 (en) * 2000-08-31 2003-02-11 University Of Maryland Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
US6493497B1 (en) 2000-09-26 2002-12-10 Motorola, Inc. Electro-optic structure and process for fabricating same
US6638838B1 (en) * 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6501121B1 (en) 2000-11-15 2002-12-31 Motorola, Inc. Semiconductor structure
US20030001207A1 (en) * 2000-11-22 2003-01-02 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant subtrate for materials used to form the same
EP1348231A2 (de) * 2000-11-22 2003-10-01 Motorola, Inc. Halbleiterstrukturen mit einem nachgiebigen substrat
US6583034B2 (en) * 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6559471B2 (en) 2000-12-08 2003-05-06 Motorola, Inc. Quantum well infrared photodetector and method for fabricating same
US6563118B2 (en) * 2000-12-08 2003-05-13 Motorola, Inc. Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same
AU2002228851A1 (en) * 2001-01-11 2002-07-24 Motorola, Inc. Tunable structure utilizing a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
US6903491B2 (en) * 2001-04-26 2005-06-07 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, actuator, and inkjet head
WO2002099867A1 (en) * 2001-06-01 2002-12-12 Motorola, Inc. Structure and method for fabricating semiconductor structures on compliant substrates
US6663989B2 (en) 2001-06-06 2003-12-16 Max-Planck-Institut Fur Mikrostrukturphysik Non c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
US6531235B2 (en) 2001-06-06 2003-03-11 Max-Planck-Institute für Mikrostrukturphysik Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6617283B2 (en) * 2001-06-22 2003-09-09 Ut-Battelle, Llc Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom
US7473959B2 (en) * 2001-06-28 2009-01-06 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices and methods of fabricating the same
US7253467B2 (en) * 2001-06-28 2007-08-07 Samsung Electronics Co., Ltd. Non-volatile semiconductor memory devices
US20060180851A1 (en) * 2001-06-28 2006-08-17 Samsung Electronics Co., Ltd. Non-volatile memory devices and methods of operating the same
US8253183B2 (en) 2001-06-28 2012-08-28 Samsung Electronics Co., Ltd. Charge trapping nonvolatile memory devices with a high-K blocking insulation layer
DE10228768A1 (de) * 2001-06-28 2003-01-16 Samsung Electronics Co Ltd Nicht-flüchtige Floating-Trap-Halbleiterspeichervorrichtungen, die Sperrisolationsschichten mit hohen Dielektrizitätskonstanten enthaltend, und Verfahren
US20030012249A1 (en) * 2001-07-13 2003-01-16 Motorola, Inc. Monolithic piezoelectrically-tunable optoelectronic device structures and methods for fabricating same
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6498358B1 (en) 2001-07-20 2002-12-24 Motorola, Inc. Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
US6472694B1 (en) 2001-07-23 2002-10-29 Motorola, Inc. Microprocessor structure having a compound semiconductor layer
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
JP4432776B2 (ja) * 2002-05-15 2010-03-17 セイコーエプソン株式会社 圧電アクチュエータ及び液体噴射ヘッド
JP4457587B2 (ja) 2002-09-05 2010-04-28 セイコーエプソン株式会社 電子デバイス用基体の製造方法及び電子デバイスの製造方法
US7473949B2 (en) * 2002-12-10 2009-01-06 Fujitsu Limited Ferroelectric capacitor and method of manufacturing the same
US20120044610A1 (en) * 2003-04-14 2012-02-23 Agilerf Y-Doped Barium Strontium Titanate For Stoichiometric Thin Film Growth
US7427367B2 (en) * 2004-08-06 2008-09-23 Ifire Technology Corp. Barium thioaluminate phosphor materials with novel crystal structures
US8082640B2 (en) * 2004-08-31 2011-12-27 Canon Kabushiki Kaisha Method for manufacturing a ferroelectric member element structure
KR20070084121A (ko) * 2004-12-08 2007-08-24 아사히 가라스 가부시키가이샤 도전막 부착 기체 및 그 제조 방법
JP4431891B2 (ja) 2004-12-28 2010-03-17 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
US20060288928A1 (en) * 2005-06-10 2006-12-28 Chang-Beom Eom Perovskite-based thin film structures on miscut semiconductor substrates
US7482651B2 (en) * 2005-12-09 2009-01-27 Micron Technology, Inc. Enhanced multi-bit non-volatile memory device with resonant tunnel barrier
US7718516B2 (en) * 2006-03-23 2010-05-18 The University Of Hong Kong Method for epitaxial growth of (110)-oriented SrTiO3 thin films on silicon without template
KR101338158B1 (ko) * 2007-07-16 2013-12-06 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
FR2993705B1 (fr) * 2012-07-20 2015-05-29 Thales Sa Dispositif comportant une pluralite de couches minces
JP2019212793A (ja) * 2018-06-06 2019-12-12 ソニー株式会社 強誘電記憶装置
WO2020210263A1 (en) 2019-04-08 2020-10-15 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same
WO2021154856A1 (en) 2020-01-29 2021-08-05 Psiquantum, Corp. Low loss high efficiency photonic phase shifter
JP2023516398A (ja) 2020-03-03 2023-04-19 サイカンタム・コーポレーション フォトニックデバイスの製作方法
EP4036639A1 (de) * 2021-02-02 2022-08-03 IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik Verfahren zur herstellung eines elektrooptischen phasenschiebers auf basis von ferroelektrischen materialien

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0763101B2 (ja) * 1985-02-04 1995-07-05 株式会社日立製作所 圧電変換器およびその製造方法
US5077270A (en) * 1987-03-26 1991-12-31 Matsushita Electric Industrial Co., Ltd. Elements comprising a film of a perovskite compound whose crystallographic axes are oriented and a method of making such elements
US4980339A (en) * 1987-07-29 1990-12-25 Matsushita Electric Industrial Co., Ltd. Superconductor structure
US5051950A (en) * 1989-07-31 1991-09-24 Radiant Technologies Read/write optical memory
US5055445A (en) * 1989-09-25 1991-10-08 Litton Systems, Inc. Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystalline substrates utilizing liquid phase epitaxy
US5130294A (en) * 1990-08-13 1992-07-14 Kookrin Char High temperature superconductor-calcium titanate structures
US5128316A (en) * 1990-06-04 1992-07-07 Eastman Kodak Company Articles containing a cubic perovskite crystal structure
EP0471292B1 (de) * 1990-08-08 1999-11-24 Sumitomo Electric Industries, Limited Substrat für supraleitende Einrichtungen
US5142437A (en) * 1991-06-13 1992-08-25 Ramtron Corporation Conducting electrode layers for ferroelectric capacitors in integrated circuits and method

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EP0654169A1 (de) 1995-05-24
US5270298A (en) 1993-12-14
EP0654169B1 (de) 2002-09-25
EP0654169A4 (de) 1997-05-02
JP2819067B2 (ja) 1998-10-30
CA2141566A1 (en) 1994-02-17
DE69332335D1 (de) 2002-10-31
WO1994003908A1 (en) 1994-02-17

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