DE69324834D1 - Oberflächenemittierende Laser mit Bragg-Reflektoren mit geringem Widerstand - Google Patents

Oberflächenemittierende Laser mit Bragg-Reflektoren mit geringem Widerstand

Info

Publication number
DE69324834D1
DE69324834D1 DE69324834T DE69324834T DE69324834D1 DE 69324834 D1 DE69324834 D1 DE 69324834D1 DE 69324834 T DE69324834 T DE 69324834T DE 69324834 T DE69324834 T DE 69324834T DE 69324834 D1 DE69324834 D1 DE 69324834D1
Authority
DE
Germany
Prior art keywords
low resistance
emitting lasers
bragg reflectors
bragg
reflectors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324834T
Other languages
English (en)
Other versions
DE69324834T2 (de
Inventor
Keith Brian Kahen
Gilbert A Hawkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE69324834D1 publication Critical patent/DE69324834D1/de
Application granted granted Critical
Publication of DE69324834T2 publication Critical patent/DE69324834T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69324834T 1992-02-18 1993-01-29 Oberflächenemittierende Laser mit Bragg-Reflektoren mit geringem Widerstand Expired - Fee Related DE69324834T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/836,569 US5212703A (en) 1992-02-18 1992-02-18 Surface emitting lasers with low resistance bragg reflectors

Publications (2)

Publication Number Publication Date
DE69324834D1 true DE69324834D1 (de) 1999-06-17
DE69324834T2 DE69324834T2 (de) 1999-12-16

Family

ID=25272252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324834T Expired - Fee Related DE69324834T2 (de) 1992-02-18 1993-01-29 Oberflächenemittierende Laser mit Bragg-Reflektoren mit geringem Widerstand

Country Status (4)

Country Link
US (1) US5212703A (de)
EP (1) EP0556619B1 (de)
JP (1) JPH05283808A (de)
DE (1) DE69324834T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
US6864570B2 (en) * 1993-12-17 2005-03-08 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US5530715A (en) * 1994-11-29 1996-06-25 Motorola, Inc. Vertical cavity surface emitting laser having continuous grading
KR0160684B1 (ko) * 1995-03-23 1999-02-01 김광호 표면광 레이저
US5568499A (en) * 1995-04-07 1996-10-22 Sandia Corporation Optical device with low electrical and thermal resistance bragg reflectors
US5513204A (en) * 1995-04-12 1996-04-30 Optical Concepts, Inc. Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump
GB2304993B (en) * 1995-08-23 1997-08-06 Toshiba Cambridge Res Center Semiconductor device
US5724376A (en) * 1995-11-30 1998-03-03 Hewlett-Packard Company Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding
US20010040907A1 (en) * 1998-06-12 2001-11-15 Utpal Kumar Chakrabarti Optical device including carbon-doped contact layers
US6301281B1 (en) * 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
JP4284126B2 (ja) * 2003-07-22 2009-06-24 シャープ株式会社 半導体レーザ素子
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
JP2009224397A (ja) * 2008-03-13 2009-10-01 Sharp Corp 発光装置およびこれを利用した照明装置、表示装置
JP5262293B2 (ja) * 2008-05-26 2013-08-14 三菱電機株式会社 光半導体装置
US11114822B2 (en) * 2019-08-27 2021-09-07 Kabushiki Kaisha Toshiba Optical semiconductor element
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5979591A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 半導体発光装置
JPH0442589A (ja) * 1990-06-08 1992-02-13 Fuji Electric Co Ltd 面発光半導体レーザ素子
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes

Also Published As

Publication number Publication date
EP0556619A2 (de) 1993-08-25
US5212703A (en) 1993-05-18
DE69324834T2 (de) 1999-12-16
EP0556619A3 (en) 1993-09-22
EP0556619B1 (de) 1999-05-12
JPH05283808A (ja) 1993-10-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee