DE69419999D1 - Optimierung der Emissionscharakteristik eines Lasers mit externem Resonator - Google Patents

Optimierung der Emissionscharakteristik eines Lasers mit externem Resonator

Info

Publication number
DE69419999D1
DE69419999D1 DE69419999T DE69419999T DE69419999D1 DE 69419999 D1 DE69419999 D1 DE 69419999D1 DE 69419999 T DE69419999 T DE 69419999T DE 69419999 T DE69419999 T DE 69419999T DE 69419999 D1 DE69419999 D1 DE 69419999D1
Authority
DE
Germany
Prior art keywords
optimization
laser
emission characteristics
external resonator
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69419999T
Other languages
English (en)
Other versions
DE69419999T2 (de
Inventor
Julie E Fouquet
David M Braun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of DE69419999D1 publication Critical patent/DE69419999D1/de
Application granted granted Critical
Publication of DE69419999T2 publication Critical patent/DE69419999T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H01S5/0288—Detuned facet reflectivity, i.e. reflectivity peak is different from gain maximum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H01S3/08063—Graded reflectivity, e.g. variable reflectivity mirror
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
DE69419999T 1993-10-08 1994-10-04 Optimierung der Emissionscharakteristik eines Lasers mit externem Resonator Expired - Fee Related DE69419999T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/134,424 US5434874A (en) 1993-10-08 1993-10-08 Method and apparatus for optimizing output characteristics of a tunable external cavity laser

Publications (2)

Publication Number Publication Date
DE69419999D1 true DE69419999D1 (de) 1999-09-16
DE69419999T2 DE69419999T2 (de) 1999-12-16

Family

ID=22463346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69419999T Expired - Fee Related DE69419999T2 (de) 1993-10-08 1994-10-04 Optimierung der Emissionscharakteristik eines Lasers mit externem Resonator

Country Status (4)

Country Link
US (1) US5434874A (de)
EP (1) EP0647995B1 (de)
JP (1) JP3637081B2 (de)
DE (1) DE69419999T2 (de)

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US5642375A (en) * 1995-10-26 1997-06-24 Hewlett-Packard Company Passively-locked external optical cavity
US6100975A (en) * 1996-05-13 2000-08-08 Process Instruments, Inc. Raman spectroscopy apparatus and method using external cavity laser for continuous chemical analysis of sample streams
GB9614494D0 (en) * 1996-07-10 1996-09-04 Cookson Matthey Ceramics Plc Improvements in printing
US6529328B1 (en) * 1998-08-07 2003-03-04 Jds Fitel Inc. Optical filter
DE19942470B4 (de) * 1998-09-08 2013-04-11 Fujitsu Ltd. Optisches Halbeitermodul und Verfahren zum Herstellen eines optischen Halbleitermoduls
US6438150B1 (en) * 1999-03-09 2002-08-20 Telecordia Technologies, Inc. Edge-emitting semiconductor laser having asymmetric interference filters
US6295308B1 (en) 1999-08-31 2001-09-25 Corning Incorporated Wavelength-locked external cavity lasers with an integrated modulator
US6856632B1 (en) * 1999-09-20 2005-02-15 Iolon, Inc. Widely tunable laser
JP2001320131A (ja) * 2000-03-01 2001-11-16 Sony Corp 多波長半導体レーザ素子アレイ及びその作製方法
JP2001284715A (ja) * 2000-03-30 2001-10-12 Ando Electric Co Ltd 外部共振器型レーザ光源
US6956886B1 (en) * 2001-11-02 2005-10-18 Patel C Kumar N Discreetly tunable semiconductor laser arrangement for wavelength division multiplex communication systems
JP3729170B2 (ja) 2002-10-18 2005-12-21 住友電気工業株式会社 半導体レーザ
DE20317902U1 (de) * 2003-11-19 2005-03-24 Sacher Joachim Laserdioden-Anordnung mit externem Resonator
JP2006222399A (ja) * 2005-02-14 2006-08-24 Hamamatsu Photonics Kk 半導体レーザ装置
JP4574413B2 (ja) * 2005-03-30 2010-11-04 アンリツ株式会社 外部共振器型レーザ用半導体発光素子の信頼性試験方法
CN1963435B (zh) * 2006-12-13 2011-08-24 中国科学院光电技术研究所 高反镜反射率测量方法
CN100559147C (zh) * 2007-04-26 2009-11-11 中国科学院光电技术研究所 基于半导体激光器自混合效应的高反射率测量方法
CN102053007B (zh) * 2009-10-29 2012-09-05 龙兴武 一种高反射率膜片膜内损耗参数的绝对测量方法
US20140091198A1 (en) * 2011-10-11 2014-04-03 Mitsubishi Electric Corporation Laser output measurement mechanism
EP2904671B1 (de) * 2012-10-05 2022-05-04 David Welford Systeme und verfahren zum verstärken von licht
JP2015103740A (ja) * 2013-11-27 2015-06-04 キヤノン株式会社 面発光レーザ、およびそれを用いた光干渉断層計
CN105375255A (zh) * 2015-09-14 2016-03-02 北京理工大学 基于变透过率腔镜的激光器输出功率优化方法
JP6650961B2 (ja) * 2018-04-25 2020-02-19 キヤノン株式会社 面発光レーザ、およびそれを用いた光干渉断層計
WO2019224601A2 (en) * 2018-05-24 2019-11-28 Panasonic intellectual property Management co., Ltd Exchangeable laser resonator modules with angular adjustment

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046837B2 (ja) * 1980-03-11 1985-10-18 日本電気株式会社 レ−ザ装置
DD256439A3 (de) * 1986-01-09 1988-05-11 Halle Feinmech Werke Veb Verfahren zur steuerung der inneren und unterdrueckung der aeusseren strahlungsrueckkopplung eines co tief 2-hochleistungslasers
US4726030A (en) * 1986-07-21 1988-02-16 Gte Laboratories Incorporated External-coupled-cavity diode laser
DE3728305A1 (de) * 1987-08-25 1989-03-09 Standard Elektrik Lorenz Ag Halbleiterlaser mit konstanter differentieller quantenausbeute oder konstanter optischer ausgangsleistung
US4873692A (en) * 1988-08-12 1989-10-10 Spectra-Physics Pulsed tunable solid state laser
GB2225482B (en) * 1988-11-23 1992-10-14 Stc Plc Multichannel cavity laser
US5050179A (en) * 1989-04-20 1991-09-17 Massachusetts Institute Of Technology External cavity semiconductor laser
DE3943470A1 (de) * 1989-05-29 1990-12-13 Rainer Thiessen Gegenstands-naeherungs und troepfchendetektor
FR2661785A1 (fr) * 1990-05-02 1991-11-08 Thomson Csf Laser accordable et procede de fabrication.
US5263037A (en) * 1990-08-01 1993-11-16 Hewlett-Packard Company Optical oscillator sweeper
US5140599A (en) * 1990-08-01 1992-08-18 Hewlett-Packard Company Optical oscillator sweeper
JPH04107976A (ja) * 1990-08-28 1992-04-09 Mitsubishi Electric Corp 半導体レーザ装置
US5161165A (en) * 1991-09-26 1992-11-03 Hewlett-Packard Company Multimode stabilized external cavity laser
US5301059A (en) * 1992-03-03 1994-04-05 Matsushita Electric Industrial Co., Ltd. Short-wavelength light generating apparatus

Also Published As

Publication number Publication date
EP0647995B1 (de) 1999-08-11
JP3637081B2 (ja) 2005-04-06
EP0647995A1 (de) 1995-04-12
US5434874A (en) 1995-07-18
JPH07170016A (ja) 1995-07-04
DE69419999T2 (de) 1999-12-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA

8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US

8339 Ceased/non-payment of the annual fee