DE69320778T2 - Elektronenquelle, Bilderzeugervorrichtung und deren Herstellungsverfahren - Google Patents
Elektronenquelle, Bilderzeugervorrichtung und deren HerstellungsverfahrenInfo
- Publication number
- DE69320778T2 DE69320778T2 DE69320778T DE69320778T DE69320778T2 DE 69320778 T2 DE69320778 T2 DE 69320778T2 DE 69320778 T DE69320778 T DE 69320778T DE 69320778 T DE69320778 T DE 69320778T DE 69320778 T2 DE69320778 T2 DE 69320778T2
- Authority
- DE
- Germany
- Prior art keywords
- electron emission
- electron
- forming
- section
- sections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000003384 imaging method Methods 0.000 title 1
- 238000005520 cutting process Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 30
- 238000010894 electron beam technology Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 14
- 230000008439 repair process Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000002159 abnormal effect Effects 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 4
- 239000002772 conduction electron Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims 3
- 230000002265 prevention Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 106
- 230000007547 defect Effects 0.000 description 19
- 230000015654 memory Effects 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- 230000015572 biosynthetic process Effects 0.000 description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 12
- 239000010419 fine particle Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- -1 Sb2O3, boron compounds Chemical class 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910003862 HfB2 Inorganic materials 0.000 description 1
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910002674 PdO Inorganic materials 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34786892 | 1992-12-28 | ||
| JP34781992 | 1992-12-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69320778D1 DE69320778D1 (de) | 1998-10-08 |
| DE69320778T2 true DE69320778T2 (de) | 1999-04-01 |
Family
ID=26578614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69320778T Expired - Lifetime DE69320778T2 (de) | 1992-12-28 | 1993-12-27 | Elektronenquelle, Bilderzeugervorrichtung und deren Herstellungsverfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5650795A (enExample) |
| EP (1) | EP0604939B1 (enExample) |
| CN (2) | CN1054233C (enExample) |
| AT (1) | ATE170664T1 (enExample) |
| AU (1) | AU674171B2 (enExample) |
| CA (1) | CA2112180C (enExample) |
| DE (1) | DE69320778T2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313815B1 (en) * | 1991-06-06 | 2001-11-06 | Canon Kabushiki Kaisha | Electron source and production thereof and image-forming apparatus and production thereof |
| EP0658916B1 (en) * | 1993-11-09 | 1998-04-15 | Canon Kabushiki Kaisha | Image display apparatus |
| CA2137721C (en) * | 1993-12-14 | 2000-10-17 | Hidetoshi Suzuki | Electron source and production thereof, and image-forming apparatus and production thereof |
| JP3062990B2 (ja) * | 1994-07-12 | 2000-07-12 | キヤノン株式会社 | 電子放出素子及びそれを用いた電子源並びに画像形成装置の製造方法と、電子放出素子の活性化装置 |
| US5996488A (en) * | 1994-11-25 | 1999-12-07 | Canon Kabushiki Kaisha | Preparation of an electron source by offset printing electrodes having thickness less than 200 nm |
| KR100203611B1 (ko) * | 1995-02-14 | 1999-07-01 | 가네꼬 히사시 | 전계 방사 냉음극의 검사 방법 및 검사 장치 |
| JP3311246B2 (ja) | 1995-08-23 | 2002-08-05 | キヤノン株式会社 | 電子発生装置、画像表示装置およびそれらの駆動回路、駆動方法 |
| JPH09259753A (ja) * | 1996-01-16 | 1997-10-03 | Canon Inc | 電子発生装置、画像形成装置及びそれらの製造方法と調整方法 |
| EP0789383B1 (en) | 1996-02-08 | 2008-07-02 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus and method of examining the manufacturing |
| US5633561A (en) * | 1996-03-28 | 1997-05-27 | Motorola | Conductor array for a flat panel display |
| JPH10308166A (ja) * | 1997-03-04 | 1998-11-17 | Pioneer Electron Corp | 電子放出素子及びこれを用いた表示装置 |
| JP3025249B2 (ja) | 1997-12-03 | 2000-03-27 | キヤノン株式会社 | 素子の駆動装置及び素子の駆動方法及び画像形成装置 |
| DE69919242T2 (de) * | 1998-02-12 | 2005-08-11 | Canon K.K. | Verfahren zur Herstellung eines elektronenemittierenden Elementes, Elektronenquelle und Bilderzeugungsgerätes |
| JP2000148081A (ja) * | 1998-09-04 | 2000-05-26 | Canon Inc | 電子源と前記電子源を用いた画像形成装置 |
| JP3878365B2 (ja) * | 1999-09-09 | 2007-02-07 | 株式会社日立製作所 | 画像表示装置および画像表示装置の製造方法 |
| KR100346548B1 (ko) * | 2000-01-05 | 2002-07-26 | 삼성에스디아이 주식회사 | 표면 전도형 전자 방출원을 갖는 평판 디스플레이 장치 |
| JP2001266735A (ja) * | 2000-03-22 | 2001-09-28 | Lg Electronics Inc | 電界放出型冷陰極構造及びこの陰極を備えた電子銃 |
| JP2004172087A (ja) * | 2002-11-05 | 2004-06-17 | Ngk Insulators Ltd | ディスプレイ |
| JP4817641B2 (ja) * | 2004-10-26 | 2011-11-16 | キヤノン株式会社 | 画像形成装置 |
| JP5665305B2 (ja) * | 2008-12-25 | 2015-02-04 | キヤノン株式会社 | 分析装置 |
| JP5936374B2 (ja) * | 2011-02-15 | 2016-06-22 | キヤノン株式会社 | 圧電振動型力センサ及びロボットハンド並びにロボットアーム |
| JP6335460B2 (ja) | 2013-09-26 | 2018-05-30 | キヤノン株式会社 | ロボットシステムの制御装置及び指令値生成方法、並びにロボットシステムの制御方法 |
| JP6964989B2 (ja) | 2017-02-09 | 2021-11-10 | キヤノン株式会社 | 制御方法、ロボットシステム、物品の製造方法、プログラム、及び記録媒体 |
| EP3366433B1 (en) | 2017-02-09 | 2022-03-09 | Canon Kabushiki Kaisha | Method of controlling robot, method of teaching robot, and robot system |
| CN119132912B (zh) * | 2024-08-19 | 2025-09-16 | 上海集成电路材料研究院有限公司 | 电子源器件及其制造方法、集成电路 |
| CN119132911B (zh) * | 2024-08-19 | 2025-09-16 | 上海集成电路材料研究院有限公司 | 电子源器件及其制造方法、集成电路 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4599847A (en) * | 1985-01-31 | 1986-07-15 | Franklin Elec Subsidiaries | Thermal cut-off device for packaging machine |
| FR2593953B1 (fr) * | 1986-01-24 | 1988-04-29 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif de visualisation par cathodoluminescence excitee par emission de champ |
| JP2627620B2 (ja) * | 1987-07-15 | 1997-07-09 | キヤノン株式会社 | 電子放出素子およびその製造方法 |
| JP2630988B2 (ja) * | 1988-05-26 | 1997-07-16 | キヤノン株式会社 | 電子線発生装置 |
| US5285129A (en) * | 1988-05-31 | 1994-02-08 | Canon Kabushiki Kaisha | Segmented electron emission device |
| JP2981751B2 (ja) * | 1989-03-23 | 1999-11-22 | キヤノン株式会社 | 電子線発生装置及びこれを用いた画像形成装置、並びに電子線発生装置の製造方法 |
| JP2514731B2 (ja) * | 1990-02-05 | 1996-07-10 | シャープ株式会社 | アクティブマトリクス表示装置 |
| US5136205A (en) * | 1991-03-26 | 1992-08-04 | Hughes Aircraft Company | Microelectronic field emission device with air bridge anode |
-
1993
- 1993-12-22 CA CA002112180A patent/CA2112180C/en not_active Expired - Fee Related
- 1993-12-23 US US08/172,105 patent/US5650795A/en not_active Expired - Lifetime
- 1993-12-24 AU AU52683/93A patent/AU674171B2/en not_active Ceased
- 1993-12-27 EP EP93120925A patent/EP0604939B1/en not_active Expired - Lifetime
- 1993-12-27 AT AT93120925T patent/ATE170664T1/de not_active IP Right Cessation
- 1993-12-27 DE DE69320778T patent/DE69320778T2/de not_active Expired - Lifetime
- 1993-12-28 CN CN93115685A patent/CN1054233C/zh not_active Expired - Fee Related
-
1999
- 1999-03-17 CN CNB991021002A patent/CN1135590C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1054233C (zh) | 2000-07-05 |
| CN1099186A (zh) | 1995-02-22 |
| AU5268393A (en) | 1994-07-07 |
| CA2112180A1 (en) | 1994-06-29 |
| AU674171B2 (en) | 1996-12-12 |
| US5650795A (en) | 1997-07-22 |
| EP0604939A3 (enExample) | 1994-08-31 |
| EP0604939B1 (en) | 1998-09-02 |
| CA2112180C (en) | 1999-06-01 |
| ATE170664T1 (de) | 1998-09-15 |
| CN1135590C (zh) | 2004-01-21 |
| CN1239813A (zh) | 1999-12-29 |
| DE69320778D1 (de) | 1998-10-08 |
| EP0604939A2 (en) | 1994-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |