DE69319366D1 - Elektrophotonische Vorrichtung mit Übertragung vertikal zur Oberfläche - Google Patents
Elektrophotonische Vorrichtung mit Übertragung vertikal zur OberflächeInfo
- Publication number
- DE69319366D1 DE69319366D1 DE69319366T DE69319366T DE69319366D1 DE 69319366 D1 DE69319366 D1 DE 69319366D1 DE 69319366 T DE69319366 T DE 69319366T DE 69319366 T DE69319366 T DE 69319366T DE 69319366 D1 DE69319366 D1 DE 69319366D1
- Authority
- DE
- Germany
- Prior art keywords
- vertical transmission
- electrophotonic
- electrophotonic device
- transmission
- vertical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005570 vertical transmission Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9099592A JP2874442B2 (ja) | 1992-04-10 | 1992-04-10 | 面入出力光電融合素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69319366D1 true DE69319366D1 (de) | 1998-08-06 |
DE69319366T2 DE69319366T2 (de) | 1998-10-22 |
Family
ID=14014092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69319366T Expired - Fee Related DE69319366T2 (de) | 1992-04-10 | 1993-04-08 | Elektrophotonische Vorrichtung mit Übertragung vertikal zur Oberfläche |
Country Status (4)
Country | Link |
---|---|
US (1) | US5293393A (de) |
EP (1) | EP0565374B1 (de) |
JP (1) | JP2874442B2 (de) |
DE (1) | DE69319366T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0674367B1 (de) * | 1993-02-22 | 1997-12-29 | Motorola, Inc. | Oberflächenemittierender Laser mit vertikalem Resonator und seitlichem Brechungsindexwellenleiter |
US5405710A (en) * | 1993-11-22 | 1995-04-11 | At&T Corp. | Article comprising microcavity light sources |
US5475701A (en) * | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
KR100259490B1 (ko) * | 1995-04-28 | 2000-06-15 | 윤종용 | 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치 |
US5848088A (en) * | 1995-07-11 | 1998-12-08 | Seiko Epson Corporation | Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same |
US5648979A (en) * | 1995-12-29 | 1997-07-15 | Samsung Electronics Co. Ltd. | Assembly of VCSEL light source and VCSEL optical detector |
CN1089292C (zh) * | 1998-03-13 | 2002-08-21 | 明石被服兴业株式会社 | 布制品折痕增强带 |
US6081379A (en) * | 1998-10-28 | 2000-06-27 | Coherent, Inc. | Multiple coupled Gires-Tournois interferometers for group-delay-dispersion control |
DE10004398A1 (de) * | 2000-02-02 | 2001-08-16 | Infineon Technologies Ag | VCSEL mit monolithisch integriertem Photodetektor |
JP3652252B2 (ja) | 2001-01-17 | 2005-05-25 | キヤノン株式会社 | 半導体光装置 |
KR100940530B1 (ko) * | 2003-01-17 | 2010-02-10 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
US7831152B2 (en) * | 2002-06-04 | 2010-11-09 | Finisar Corporation | Optical transceiver |
KR20040076330A (ko) * | 2003-02-25 | 2004-09-01 | 삼성전자주식회사 | 실리콘 광소자 및 이를 적용한 광신호 입출력장치 |
US6977954B2 (en) * | 2003-07-25 | 2005-12-20 | University Of Connecticut | Semiconductor laser array device employing modulation doped quantum well structures |
KR100612875B1 (ko) * | 2004-11-24 | 2006-08-14 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
KR20060059327A (ko) * | 2004-11-27 | 2006-06-01 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
JP5239568B2 (ja) * | 2008-07-10 | 2013-07-17 | 三菱電機株式会社 | 半導体受光素子 |
JP2016085968A (ja) * | 2014-10-24 | 2016-05-19 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、及び照明装置 |
CN106201983B (zh) * | 2016-07-15 | 2019-04-23 | 浪潮(北京)电子信息产业有限公司 | 一种计算机系统 |
JP7094694B2 (ja) * | 2017-12-01 | 2022-07-04 | キヤノン株式会社 | 発光素子アレイ及びこれを用いた露光ヘッドと画像形成装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8803080A (nl) * | 1988-12-16 | 1990-07-16 | Philips Nv | Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser. |
US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
US5012486A (en) * | 1990-04-06 | 1991-04-30 | At&T Bell Laboratories | Vertical cavity semiconductor laser with lattice-mismatched mirror stack |
US5031188A (en) * | 1990-04-30 | 1991-07-09 | At&T Bell Laboratories | Inline diplex lightwave transceiver |
JP2596195B2 (ja) * | 1990-08-20 | 1997-04-02 | 日本電気株式会社 | 垂直共振器型面入出力光電融合素子 |
-
1992
- 1992-04-10 JP JP9099592A patent/JP2874442B2/ja not_active Expired - Fee Related
-
1993
- 1993-04-06 US US08/044,372 patent/US5293393A/en not_active Expired - Lifetime
- 1993-04-08 DE DE69319366T patent/DE69319366T2/de not_active Expired - Fee Related
- 1993-04-08 EP EP93302771A patent/EP0565374B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH05299689A (ja) | 1993-11-12 |
EP0565374B1 (de) | 1998-07-01 |
JP2874442B2 (ja) | 1999-03-24 |
DE69319366T2 (de) | 1998-10-22 |
US5293393A (en) | 1994-03-08 |
EP0565374A1 (de) | 1993-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |