DE69324621D1 - Vorrichtung mit Substratisolation - Google Patents

Vorrichtung mit Substratisolation

Info

Publication number
DE69324621D1
DE69324621D1 DE69324621T DE69324621T DE69324621D1 DE 69324621 D1 DE69324621 D1 DE 69324621D1 DE 69324621 T DE69324621 T DE 69324621T DE 69324621 T DE69324621 T DE 69324621T DE 69324621 D1 DE69324621 D1 DE 69324621D1
Authority
DE
Germany
Prior art keywords
substrate insulation
insulation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324621T
Other languages
English (en)
Other versions
DE69324621T2 (de
Inventor
Pietro Consiglio
Pietro Erratico
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69324621D1 publication Critical patent/DE69324621D1/de
Application granted granted Critical
Publication of DE69324621T2 publication Critical patent/DE69324621T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
DE69324621T 1992-02-17 1993-02-12 Vorrichtung mit Substratisolation Expired - Fee Related DE69324621T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITMI920338A IT1261880B (it) 1992-02-17 1992-02-17 Dispositivo di isolamento del substrato, particolarmente per circuiti integrati

Publications (2)

Publication Number Publication Date
DE69324621D1 true DE69324621D1 (de) 1999-06-02
DE69324621T2 DE69324621T2 (de) 1999-12-09

Family

ID=11362007

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324621T Expired - Fee Related DE69324621T2 (de) 1992-02-17 1993-02-12 Vorrichtung mit Substratisolation

Country Status (5)

Country Link
US (1) US5525832A (de)
EP (1) EP0556743B1 (de)
JP (1) JPH065792A (de)
DE (1) DE69324621T2 (de)
IT (1) IT1261880B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925910A (en) * 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
DE69834315T2 (de) * 1998-02-10 2007-01-18 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist
DE10006519B4 (de) * 2000-02-15 2004-03-11 Infineon Technologies Ag MOSFET-Treibertransistor und Verfahren zum Herstellen desselben
DE10037452B4 (de) 2000-08-01 2006-07-27 Infineon Technologies Ag Nachführschaltung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256893A (en) * 1987-07-22 1993-10-26 Hitachi, Ltd. Semiconductor integrated circuit device with power MOSFET incorporated
US5151767A (en) * 1991-05-03 1992-09-29 North American Philips Corp. Power integrated circuit having reverse-voltage protection
IT1252623B (it) * 1991-12-05 1995-06-19 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando, con circuito di isolamento dinamico,integrati in maniera monolitica nella stessa piastrina

Also Published As

Publication number Publication date
EP0556743A1 (de) 1993-08-25
ITMI920338A1 (it) 1993-08-18
JPH065792A (ja) 1994-01-14
EP0556743B1 (de) 1999-04-28
ITMI920338A0 (it) 1992-02-17
US5525832A (en) 1996-06-11
IT1261880B (it) 1996-06-03
DE69324621T2 (de) 1999-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee