DE69311996T2 - Verfahren zur Herstellung einer optoelektronischen Halbleiteranordnung und für die Anwendung bei einem derartigen Verfahren geeignetes optoelektronisches Halbleiterelement - Google Patents
Verfahren zur Herstellung einer optoelektronischen Halbleiteranordnung und für die Anwendung bei einem derartigen Verfahren geeignetes optoelektronisches HalbleiterelementInfo
- Publication number
- DE69311996T2 DE69311996T2 DE69311996T DE69311996T DE69311996T2 DE 69311996 T2 DE69311996 T2 DE 69311996T2 DE 69311996 T DE69311996 T DE 69311996T DE 69311996 T DE69311996 T DE 69311996T DE 69311996 T2 DE69311996 T2 DE 69311996T2
- Authority
- DE
- Germany
- Prior art keywords
- wire
- carrier
- contact surface
- angle
- optoelectronic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H10W72/075—
-
- H10W72/50—
-
- H10W99/00—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H10W72/07532—
-
- H10W72/07533—
-
- H10W72/536—
-
- H10W72/5363—
-
- H10W72/5522—
-
- H10W72/59—
-
- H10W90/753—
-
- H10W90/754—
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP92202949 | 1992-09-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69311996D1 DE69311996D1 (de) | 1997-08-14 |
| DE69311996T2 true DE69311996T2 (de) | 1998-01-22 |
Family
ID=8210940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69311996T Expired - Fee Related DE69311996T2 (de) | 1992-09-25 | 1993-09-17 | Verfahren zur Herstellung einer optoelektronischen Halbleiteranordnung und für die Anwendung bei einem derartigen Verfahren geeignetes optoelektronisches Halbleiterelement |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0589524B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JPH06237048A (cg-RX-API-DMAC10.html) |
| KR (1) | KR940008144A (cg-RX-API-DMAC10.html) |
| DE (1) | DE69311996T2 (cg-RX-API-DMAC10.html) |
| TW (1) | TW253997B (cg-RX-API-DMAC10.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6454026A (en) * | 1987-08-24 | 1989-03-01 | Dai Ichi Kogyo Seiyaku Co Ltd | Production of modified polyester |
| KR100389955B1 (ko) * | 1996-05-15 | 2003-09-19 | 주식회사 하이닉스반도체 | 이동 통신 교환기의 상. 하위 프로세서간 버스 통신장치및방법 |
| US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
| US6747298B2 (en) | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159078A (en) * | 1981-03-25 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor light-emitting device |
| JPS58201388A (ja) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPS58201389A (ja) * | 1982-05-20 | 1983-11-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPH0286184A (ja) * | 1988-09-22 | 1990-03-27 | Hitachi Ltd | 光電子装置 |
| JPH03286547A (ja) * | 1990-04-02 | 1991-12-17 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法 |
-
1993
- 1993-09-08 TW TW082107356A patent/TW253997B/zh active
- 1993-09-17 DE DE69311996T patent/DE69311996T2/de not_active Expired - Fee Related
- 1993-09-17 EP EP93202701A patent/EP0589524B1/en not_active Expired - Lifetime
- 1993-09-22 JP JP5236653A patent/JPH06237048A/ja active Pending
- 1993-09-22 KR KR1019930019340A patent/KR940008144A/ko not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TW253997B (cg-RX-API-DMAC10.html) | 1995-08-11 |
| EP0589524B1 (en) | 1997-07-09 |
| EP0589524A3 (en) | 1994-04-20 |
| KR940008144A (ko) | 1994-04-29 |
| EP0589524A2 (en) | 1994-03-30 |
| JPH06237048A (ja) | 1994-08-23 |
| DE69311996D1 (de) | 1997-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
| 8339 | Ceased/non-payment of the annual fee |