DE69311972T2 - Verfahren zur Herstellung einer dielektrischen Schicht zwischen Magnetwiderstandsschichten für einen Lesekopf - Google Patents

Verfahren zur Herstellung einer dielektrischen Schicht zwischen Magnetwiderstandsschichten für einen Lesekopf

Info

Publication number
DE69311972T2
DE69311972T2 DE69311972T DE69311972T DE69311972T2 DE 69311972 T2 DE69311972 T2 DE 69311972T2 DE 69311972 T DE69311972 T DE 69311972T DE 69311972 T DE69311972 T DE 69311972T DE 69311972 T2 DE69311972 T2 DE 69311972T2
Authority
DE
Germany
Prior art keywords
producing
dielectric layer
read head
magnetic resistance
resistance layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69311972T
Other languages
English (en)
Other versions
DE69311972D1 (de
Inventor
Thomas C Anthony
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hewlett Packard Development Co LP
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE69311972D1 publication Critical patent/DE69311972D1/de
Publication of DE69311972T2 publication Critical patent/DE69311972T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Inorganic Insulating Materials (AREA)
  • Hall/Mr Elements (AREA)
DE69311972T 1992-06-05 1993-05-12 Verfahren zur Herstellung einer dielektrischen Schicht zwischen Magnetwiderstandsschichten für einen Lesekopf Expired - Fee Related DE69311972T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/894,398 US5302461A (en) 1992-06-05 1992-06-05 Dielectric films for use in magnetoresistive transducers

Publications (2)

Publication Number Publication Date
DE69311972D1 DE69311972D1 (de) 1997-08-14
DE69311972T2 true DE69311972T2 (de) 1997-11-06

Family

ID=25403022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69311972T Expired - Fee Related DE69311972T2 (de) 1992-06-05 1993-05-12 Verfahren zur Herstellung einer dielektrischen Schicht zwischen Magnetwiderstandsschichten für einen Lesekopf

Country Status (4)

Country Link
US (1) US5302461A (de)
EP (1) EP0573157B1 (de)
JP (1) JP3514487B2 (de)
DE (1) DE69311972T2 (de)

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DE4425356C2 (de) * 1993-09-29 1998-07-02 Siemens Ag Magnetoresistiver Sensor unter Verwendung eines Sensormaterials mit perowskitähnlicher Kristallstruktur
EP0657562B1 (de) 1993-11-12 2001-09-12 PPG Industries Ohio, Inc. Haltbare Sputterschicht aus Metalloxid
US5491605A (en) * 1994-12-23 1996-02-13 International Business Machines Corporation Shorted magnetoresistive head elements for electrical overstress and electrostatic discharge protection
US5831426A (en) * 1996-08-16 1998-11-03 Nonvolatile Electronics, Incorporated Magnetic current sensor
US5680282A (en) * 1996-10-24 1997-10-21 International Business Machine Corporation Getter layer lead structure for eliminating resistance increase phonomena and embrittlement and method for making the same
US5963401A (en) * 1997-09-29 1999-10-05 Storage Technology Corporation Magnetic tape head assembly including modules having a plurality of magneto-resistive head elements
US5997381A (en) * 1997-09-29 1999-12-07 Storage Technology Corporation Lapping sensor for thin film recording elements and method for manufacturing same
US5953184A (en) * 1997-09-30 1999-09-14 Storage Technology Corporation Transverse slotted magnetic tape head assembly
US5923506A (en) * 1997-10-03 1999-07-13 Storage Technology Corporation Recording head element with improved coil tap and method for manufacturing same
US6002554A (en) * 1997-10-03 1999-12-14 Storage Technology Corporation Multitrack coupled element read head with support structure to eliminate shorting and method for manufacturing same
US6038108A (en) * 1997-11-21 2000-03-14 Storage Technology Corporation Magnetic tape head assembly having segmented heads
US5999379A (en) * 1997-12-11 1999-12-07 International Business Machines Corporation Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making
US6452204B1 (en) * 1998-12-08 2002-09-17 Nec Corporation Tunneling magnetoresistance transducer and method for manufacturing the same
DE19938215A1 (de) 1999-08-12 2001-02-22 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung eines magnetischen Tunnelkontakts sowie magnetischer Tunnelkontakt
US6266218B1 (en) 1999-10-28 2001-07-24 International Business Machines Corporation Magnetic sensors having antiferromagnetically exchange-coupled layers for longitudinal biasing
US6452761B1 (en) 2000-01-14 2002-09-17 International Business Machines Corporation Magneto-resistive and spin-valve sensor gap with reduced thickness and high thermal conductivity
DE10020769C2 (de) * 2000-04-28 2003-07-24 Forschungszentrum Juelich Gmbh Verfahren zum Herstellen magnetischer Tunnelkontakte
JP2002025017A (ja) * 2000-07-10 2002-01-25 Tdk Corp 磁気抵抗効果型薄膜磁気ヘッド
US6429640B1 (en) 2000-08-21 2002-08-06 The United States Of America As Represented By The Secretary Of The Air Force GMR high current, wide dynamic range sensor
US6714387B1 (en) 2001-01-08 2004-03-30 Headway Technologies, Inc. Spin valve head with reduced element gap
US6707647B2 (en) 2001-01-29 2004-03-16 International Business Machines Corporation Magnetic head with thin gap layers
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6767795B2 (en) * 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
US6893984B2 (en) * 2002-02-20 2005-05-17 Micron Technology Inc. Evaporated LaA1O3 films for gate dielectrics
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6921702B2 (en) * 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7049192B2 (en) * 2003-06-24 2006-05-23 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectrics
US7192824B2 (en) * 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US7557562B2 (en) * 2004-09-17 2009-07-07 Nve Corporation Inverted magnetic isolator
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3862017A (en) * 1970-02-04 1975-01-21 Hideo Tsunemitsu Method for producing a thin film passive circuit element
US3860965A (en) * 1973-10-04 1975-01-14 Ibm Magnetoresistive read head assembly having matched elements for common mode rejection
US4012781A (en) * 1975-08-14 1977-03-15 International Business Machines Corporation Magnetoresistive read head assembly for servo operation
US4219853A (en) * 1978-12-21 1980-08-26 International Business Machines Corporation Read/write thin film head
FR2505070B1 (fr) * 1981-01-16 1986-04-04 Suwa Seikosha Kk Dispositif non lineaire pour un panneau d'affichage a cristaux liquides et procede de fabrication d'un tel panneau d'affichage
JPS5971112A (ja) * 1982-10-15 1984-04-21 Comput Basic Mach Technol Res Assoc 薄膜磁気ヘツド
JPS60171617A (ja) * 1984-02-15 1985-09-05 Sumitomo Electric Ind Ltd 薄膜磁気ヘツド用セラミツク基板
AU616736B2 (en) * 1988-03-03 1991-11-07 Asahi Glass Company Limited Amorphous oxide film and article having such film thereon
US4940511A (en) * 1988-03-28 1990-07-10 International Business Machines Corporation Method for making a magnetoresistive read transducer
US4853080A (en) * 1988-12-14 1989-08-01 Hewlett-Packard Lift-off process for patterning shields in thin magnetic recording heads

Also Published As

Publication number Publication date
JP3514487B2 (ja) 2004-03-31
EP0573157A1 (de) 1993-12-08
DE69311972D1 (de) 1997-08-14
US5302461A (en) 1994-04-12
JPH0676625A (ja) 1994-03-18
EP0573157B1 (de) 1997-07-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD CO. (N.D.GES.D.STAATES DELAWARE),

8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT CO., L.P., HOUSTON, TE

8339 Ceased/non-payment of the annual fee