DE69310310D1 - Hochleistungs-N-Kanal-Ladungspumpe - Google Patents

Hochleistungs-N-Kanal-Ladungspumpe

Info

Publication number
DE69310310D1
DE69310310D1 DE69310310T DE69310310T DE69310310D1 DE 69310310 D1 DE69310310 D1 DE 69310310D1 DE 69310310 T DE69310310 T DE 69310310T DE 69310310 T DE69310310 T DE 69310310T DE 69310310 D1 DE69310310 D1 DE 69310310D1
Authority
DE
Germany
Prior art keywords
high performance
charge pump
channel charge
channel
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69310310T
Other languages
English (en)
Other versions
DE69310310T2 (de
Inventor
Michael V Cordoba
Kim C Hardee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Promos Technologies Inc
Original Assignee
Nippon Steel Semiconductor Corp
United Memories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25508012&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69310310(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Steel Semiconductor Corp, United Memories Inc filed Critical Nippon Steel Semiconductor Corp
Publication of DE69310310D1 publication Critical patent/DE69310310D1/de
Application granted granted Critical
Publication of DE69310310T2 publication Critical patent/DE69310310T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
DE69310310T 1992-10-20 1993-08-26 Hochleistungs-N-Kanal-Ladungspumpe Expired - Lifetime DE69310310T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/964,003 US5412257A (en) 1992-10-20 1992-10-20 High efficiency N-channel charge pump having a primary pump and a non-cascaded secondary pump

Publications (2)

Publication Number Publication Date
DE69310310D1 true DE69310310D1 (de) 1997-06-05
DE69310310T2 DE69310310T2 (de) 1997-08-14

Family

ID=25508012

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69310310T Expired - Lifetime DE69310310T2 (de) 1992-10-20 1993-08-26 Hochleistungs-N-Kanal-Ladungspumpe

Country Status (4)

Country Link
US (1) US5412257A (de)
EP (1) EP0594230B1 (de)
JP (1) JP2815293B2 (de)
DE (1) DE69310310T2 (de)

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NL9200056A (nl) * 1992-01-14 1993-08-02 Sierra Semiconductor Bv Hoogspanningsgenerator met uitgangsstroomregeling.
US5811990A (en) 1993-10-15 1998-09-22 Micron Technology, Inc. Voltage pump and a level translator circuit
DE69424764T2 (de) * 1994-01-28 2000-11-16 Stmicroelectronics S.R.L., Agrate Brianza Ladungspumpenschaltung
GB9423051D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A voltage level converter
US5677645A (en) * 1995-05-08 1997-10-14 Micron Technology, Inc. Vccp pump for low voltage operation
KR100208443B1 (ko) * 1995-10-14 1999-07-15 김영환 네가티브 전압 구동회로
KR0172850B1 (ko) * 1995-11-23 1999-03-30 문정환 고효율 전하 펌프회로
US6198339B1 (en) 1996-09-17 2001-03-06 International Business Machines Corporation CVF current reference with standby mode
DE69619534T2 (de) * 1996-11-14 2002-10-31 Stmicroelectronics S.R.L., Agrate Brianza BICMOS negative Leistungsladungspumpe
GB2324423B (en) * 1997-04-16 1999-07-21 Lsi Logic Corp Charge pump
US6208197B1 (en) 1999-03-04 2001-03-27 Vanguard International Semiconductor Corp. Internal charge pump voltage limit control
US6255896B1 (en) * 1999-09-27 2001-07-03 Intel Corporation Method and apparatus for rapid initialization of charge pump circuits
US6337595B1 (en) * 2000-07-28 2002-01-08 International Business Machines Corporation Low-power DC voltage generator system
US7034652B2 (en) * 2001-07-10 2006-04-25 Littlefuse, Inc. Electrostatic discharge multifunction resistor
US6952116B2 (en) * 2003-09-29 2005-10-04 Micron Technology, Inc. Non-cascading charge pump circuit and method
US7248096B2 (en) * 2004-11-22 2007-07-24 Stmicroelectronics S.R.L. Charge pump circuit with dynamic biasing of pass transistors
JP2006311703A (ja) * 2005-04-28 2006-11-09 Seiko Instruments Inc チャージポンプ回路を有する電子機器
KR100757410B1 (ko) 2005-09-16 2007-09-11 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법
US7772919B2 (en) * 2007-07-26 2010-08-10 International Rectifier Corporation Double stage compact charge pump circuit

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JPS532308B2 (de) * 1972-09-25 1978-01-26
IT1073440B (it) * 1975-09-22 1985-04-17 Seiko Instr & Electronics Circuito elevatore di tensione realizzato in mos-fet
JPS5693422A (en) * 1979-12-05 1981-07-29 Fujitsu Ltd Level-up circuit
DE3067215D1 (en) * 1979-12-13 1984-04-26 Fujitsu Ltd Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
JPS58151719A (ja) * 1982-03-05 1983-09-09 Sony Corp パルス発生回路
US4733108A (en) * 1982-06-28 1988-03-22 Xerox Corporation On-chip bias generator
DE3371961D1 (en) * 1983-05-27 1987-07-09 Itt Ind Gmbh Deutsche Mos push-pull bootstrap driver
US4591738A (en) * 1983-10-27 1986-05-27 International Business Machines Corporation Charge pumping circuit
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram
US4578601A (en) * 1983-12-07 1986-03-25 Motorola, Inc. High speed TTL clock input buffer circuit which minimizes power and provides CMOS level translation
US4631421A (en) * 1984-08-14 1986-12-23 Texas Instruments CMOS substrate bias generator
NL8402764A (nl) * 1984-09-11 1986-04-01 Philips Nv Schakeling voor het opwekken van een substraatvoorspanning.
JPS61260717A (ja) * 1985-05-14 1986-11-18 Mitsubishi Electric Corp 半導体昇圧信号発生回路
US4797899A (en) * 1986-12-15 1989-01-10 Maxim Integrated Products, Inc. Integrated dual charge pump power supply including power down feature and rs-232 transmitter/receiver
DE8714849U1 (de) * 1986-12-23 1987-12-23 Jenoptik Jena Gmbh, Ddr 6900 Jena Geregelter CMOS-Substratspannungsgenerator
US4984256A (en) * 1987-02-13 1991-01-08 Kabushiki Kaisha Toshiba Charge transfer device with booster circuit
US4883976A (en) * 1987-12-02 1989-11-28 Xicor, Inc. Low power dual-mode CMOS bias voltage generator
US4922130A (en) * 1988-05-26 1990-05-01 Hewlett-Packard Company High performance track/hold for a digital multimeter
KR0133933B1 (ko) * 1988-11-09 1998-04-25 고스기 노부미쓰 기판바이어스 발생회로
FR2642240B1 (fr) * 1989-01-23 1994-07-29 Sgs Thomson Microelectronics Circuit a transistor mos de puissance commande par un dispositif a deux pompes de charge symetriques
DE3931596A1 (de) * 1989-03-25 1990-10-04 Eurosil Electronic Gmbh Spannungsvervielfacherschaltung
JP2531267B2 (ja) * 1989-06-20 1996-09-04 日本電気株式会社 チャ―ジポンプ
US5036229A (en) * 1989-07-18 1991-07-30 Gazelle Microcircuits, Inc. Low ripple bias voltage generator
DE58908860D1 (de) * 1989-07-25 1995-02-16 Siemens Ag Schaltungsanordnung zur Nachlaufsynchronisation.
JP2780365B2 (ja) * 1989-08-14 1998-07-30 日本電気株式会社 基板電位発生回路
DE69015126D1 (de) * 1989-11-08 1995-01-26 Nat Semiconductor Corp Cascodeschaltkreis mit maximalem Hub für eine bipolare Ladungspumpe.
US5008799A (en) * 1990-04-05 1991-04-16 Montalvo Antonio J Back-to-back capacitor charge pumps
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
KR930008876B1 (ko) * 1990-08-17 1993-09-16 현대전자산업 주식회사 반도체소자의 고전압 발생회로
US5162668A (en) * 1990-12-14 1992-11-10 International Business Machines Corporation Small dropout on-chip voltage regulators with boosted power supply
KR940003153B1 (ko) * 1991-04-12 1994-04-15 금성일렉트론 주식회사 백바이어스 발생회로
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
KR940005691B1 (ko) * 1991-10-25 1994-06-22 삼성전자 주식회사 기판전압 발생 장치의 차아지 펌프회로

Also Published As

Publication number Publication date
EP0594230B1 (de) 1997-05-02
US5412257A (en) 1995-05-02
JPH06217527A (ja) 1994-08-05
JP2815293B2 (ja) 1998-10-27
DE69310310T2 (de) 1997-08-14
EP0594230A1 (de) 1994-04-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MOSEL VITELIC INC., HSINCHU, TW

8328 Change in the person/name/address of the agent

Representative=s name: WEICKMANN & WEICKMANN, 81679 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: PROMOS TECHNOLOGIES, INC., HSINCHU, TW