DE69519090D1 - Verbesserte Ladungspumpenschaltung - Google Patents

Verbesserte Ladungspumpenschaltung

Info

Publication number
DE69519090D1
DE69519090D1 DE69519090T DE69519090T DE69519090D1 DE 69519090 D1 DE69519090 D1 DE 69519090D1 DE 69519090 T DE69519090 T DE 69519090T DE 69519090 T DE69519090 T DE 69519090T DE 69519090 D1 DE69519090 D1 DE 69519090D1
Authority
DE
Germany
Prior art keywords
charge pump
pump circuit
improved charge
improved
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69519090T
Other languages
English (en)
Other versions
DE69519090T2 (de
Inventor
Luigi Pascucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Application granted granted Critical
Publication of DE69519090D1 publication Critical patent/DE69519090D1/de
Publication of DE69519090T2 publication Critical patent/DE69519090T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
DE69519090T 1995-07-28 1995-07-28 Verbesserte Ladungspumpenschaltung Expired - Fee Related DE69519090T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830335A EP0756220B1 (de) 1995-07-28 1995-07-28 Verbesserte Ladungspumpenschaltung

Publications (2)

Publication Number Publication Date
DE69519090D1 true DE69519090D1 (de) 2000-11-16
DE69519090T2 DE69519090T2 (de) 2001-06-13

Family

ID=8221982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69519090T Expired - Fee Related DE69519090T2 (de) 1995-07-28 1995-07-28 Verbesserte Ladungspumpenschaltung

Country Status (3)

Country Link
US (1) US5760497A (de)
EP (1) EP0756220B1 (de)
DE (1) DE69519090T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5801934A (en) * 1996-12-12 1998-09-01 Cypress Semiconductor Corp. Charge pump with reduced power consumption
EP0856935B1 (de) * 1997-02-03 2003-11-05 Denso Corporation Ladungspumpenschaltung
US5940876A (en) * 1997-04-02 1999-08-17 Advanced Micro Devices, Inc. Stride instruction for fetching data separated by a stride amount
JPH11103254A (ja) * 1997-09-26 1999-04-13 Toshiba Corp アナログデジタル変換回路装置及びその変換方法
US5999425A (en) * 1998-01-15 1999-12-07 Cypress Semiconductor Corp. Charge pump architecture for integrated circuit
US6208542B1 (en) 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
US6320797B1 (en) * 1999-02-24 2001-11-20 Micron Technology, Inc. Method and circuit for regulating the output voltage from a charge pump circuit, and memory device using same
WO2000057557A1 (en) * 1999-03-24 2000-09-28 Arizona Digital, Inc. Method and apparatus for boosting backplane drive circuits
US6430067B1 (en) * 2001-04-12 2002-08-06 Sun Microsystems, Inc. Voltage multiplier for low voltage microprocessor
US6535446B2 (en) * 2001-05-24 2003-03-18 Ramtron International Corporation Two stage low voltage ferroelectric boost circuit
KR100714034B1 (ko) * 2003-10-10 2007-05-04 에스티마이크로일렉트로닉스 엔.브이. 반도체 소자의 고전압 스위치 회로
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US9491151B2 (en) * 2015-01-07 2016-11-08 Ememory Technology Inc. Memory apparatus, charge pump circuit and voltage pumping method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5036229A (en) * 1989-07-18 1991-07-30 Gazelle Microcircuits, Inc. Low ripple bias voltage generator
GB2245112A (en) * 1990-06-13 1991-12-18 Philips Electronic Associated Dc/dc voltage multiplier.
WO1993009592A1 (en) * 1991-10-30 1993-05-13 Xilinx, Inc. Regulator for pumped voltage generator
US5191232A (en) * 1992-03-17 1993-03-02 Silicon Storage Technology, Inc. High frequency voltage multiplier for an electrically erasable and programmable memory device
US5301097A (en) * 1992-06-10 1994-04-05 Intel Corporation Multi-staged charge-pump with staggered clock phases for providing high current capability
EP0666571B1 (de) * 1994-01-28 2000-05-31 STMicroelectronics S.r.l. Ladungspumpenschaltung
US5532653A (en) * 1995-02-07 1996-07-02 National Semiconductor Corporation Supply voltage compensated charge pump oscillator

Also Published As

Publication number Publication date
DE69519090T2 (de) 2001-06-13
US5760497A (en) 1998-06-02
EP0756220B1 (de) 2000-10-11
EP0756220A1 (de) 1997-01-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee